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MR0A08BYS35R

MR0A08BYS35R
Mfr. #:
MR0A08BYS35R
Fabricante:
Everspin Technologies
Descripción:
NVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
MR0A08BYS35R Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
MR0A08BYS35R más información
Atributo del producto
Valor de atributo
Fabricante
Everspin Technologies Inc.
categoria de producto
Memoria
Serie
MR0A08B
embalaje
Embalaje alternativo de cinta y carrete (TR)
Estilo de montaje
SMD / SMT
Paquete-Estuche
TSOP-44
Temperatura de funcionamiento
0°C ~ 70°C (TA)
Interfaz
Parallel
Suministro de voltaje
3 V ~ 3.6 V
Paquete de dispositivo de proveedor
44-TSOP2 (10.2x18.4)
Tamaño de la memoria
1M (128K x 8)
Tipo de memoria
MRAM (RAM magnetorresistiva)
Velocidad
35ns
Tiempo de acceso
35 ns
Formato de memoria
RAM
Temperatura máxima de funcionamiento
+ 70 C
Temperatura mínima de funcionamiento
0 C
Corriente de suministro de funcionamiento
55 mA
Tipo de interfaz
Parallel
Organización
128 k x 8
Ancho de bus de datos
8 bit
Suministro-Voltaje-Máx.
3.6 V
Suministro-Voltaje-Mín.
3 V
Tags
MR0A0, MR0A, MR0
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    L***v
    L***v
    BY

    Corresponds to the description

    2019-07-29
    V***.
    V***.
    BY

    Great store.

    2019-06-02
    I***n
    I***n
    LK

    good work

    2019-04-22
***et Europe
NVRAM MRAM Parallel 1M-Bit 3.3V 44-Pin TSOP-II T/R
***i-Key
IC RAM 1MBIT PARALLEL 44TSOP2
***S
new, original packaged
Magnetoresistive Random Access Memory (MRAM)
Everspin Technologies Magnetoresistive Random Access Memory (MRAM) uses a 1 Transistor – 1 Magnetic Tunnel Junction (1T-1MTJ) architecture. These MRAM devices offer significantly long Data Retention (20+ years) and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.
Everspin MRAM
MR0A08B / MR0D08B / MR0A16A 1Mb Parallel MRAM
Everspin Technologies MR0A08B, MR0D08B, and MR0A16A are 1,048,576-bit magnetoresistive random access memory (MRAM) devices. The Everspin MRAM devices are available in a variety of specifications, such as dual supply, serial SPI, and organized as 131,072 words of 8 bits or 65,536 words of 16 bits. These MRAM devices are as fast 35ns or 45ns read/write timing cycles with no write delays and unlimited read/write endurance. 
Parte # Mfg. Descripción Valores Precio
MR0A08BYS35R
DISTI # MR0A08BYS35R		Everspin TechnologiesNVRAM MRAM Parallel 1M-Bit 3.3V 44-Pin TSOP-II T/R (Alt: MR0A08BYS35R)
RoHS: Compliant
Min Qty: 1500
Container: Tape and Reel		Europe - 0
  • 1500:€9.0900
  • 3000:€8.6900
  • 6000:€8.3900
  • 9000:€7.7900
  • 15000:€7.1900
MR0A08BYS35
DISTI # 936-MR0A08BYS35		Everspin TechnologiesNVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM
RoHS: Compliant		220
  • 1:$10.9500
  • 10:$10.1500
  • 25:$9.9200
  • 50:$9.8600
  • 100:$8.6800
  • 250:$8.2500
  • 500:$8.1700
MR0A08BYS35R
DISTI # 936-MR0A08BYS35R		Everspin TechnologiesNVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM
RoHS: Compliant		0
  • 1:$11.3200
  • 10:$10.4800
  • 25:$10.2400
  • 50:$10.1900
  • 100:$8.9700
  • 250:$8.5300
  • 500:$8.4400
  • 1000:$8.3100
  • 1500:$7.9300
Imagen Parte # Descripción
MR0A08BCMA35

Mfr.#: MR0A08BCMA35

OMO.#: OMO-MR0A08BCMA35

 NVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM
MR0A08BMA35R

Mfr.#: MR0A08BMA35R

OMO.#: OMO-MR0A08BMA35R

 NVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM
MR0A08BCMA35R

Mfr.#: MR0A08BCMA35R

OMO.#: OMO-MR0A08BCMA35R

 NVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM
MR0A08BCSO35R

Mfr.#: MR0A08BCSO35R

OMO.#: OMO-MR0A08BCSO35R

 NVRAM 3.3V 1Mb (128Kx8) MRAM
MR0A08BSO35

Mfr.#: MR0A08BSO35

OMO.#: OMO-MR0A08BSO35

 NVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM
MR0A08BCSO35R

Mfr.#: MR0A08BCSO35R

OMO.#: OMO-MR0A08BCSO35R-EVERSPIN-TECHNOLOGIES

 NVRAM 3.3V 1Mb (128Kx8) MRAM
MR0A08BCSO35

Mfr.#: MR0A08BCSO35

OMO.#: OMO-MR0A08BCSO35-EVERSPIN-TECHNOLOGIES

 NVRAM 3.3V 1Mb (128Kx8) MRAM
MR0A08BCMA35

Mfr.#: MR0A08BCMA35

OMO.#: OMO-MR0A08BCMA35-EVERSPIN-TECHNOLOGIES

 IC RAM 1M PARALLEL 48FBGA
MR0A08BCYS35

Mfr.#: MR0A08BCYS35

OMO.#: OMO-MR0A08BCYS35-EVERSPIN-TECHNOLOGIES

 NVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM
MR0A08BSO35

Mfr.#: MR0A08BSO35

OMO.#: OMO-MR0A08BSO35-EVERSPIN-TECHNOLOGIES

 NVRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM
Disponibilidad
Valores:
Available
En orden:
4500
Ingrese la cantidad:
El precio actual de MR0A08BYS35R es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
11,26 US$
11,26 US$
10
10,70 US$
107,02 US$
100
10,14 US$
1 013,85 US$
500
9,58 US$
4 787,65 US$
1000
9,01 US$
9 012,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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