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FGY60T120SQDN

FGY60T120SQDN
Mfr. #:
FGY60T120SQDN
Fabricante:
ON Semiconductor
Descripción:
IGBT Transistors IGBT 1200V 60A UFS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FGY60T120SQDN Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
FGY60T120SQDN más información
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-247-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
1200 V
Voltaje de saturación colector-emisor:
1.7 V
Voltaje máximo del emisor de puerta:
25 V
Corriente continua del colector a 25 C:
120 A
Pd - Disipación de energía:
517 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Embalaje:
Tubo
Corriente continua de colector Ic Max:
120 A
Marca:
EN Semiconductor
Corriente de fuga puerta-emisor:
200 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
450
Subcategoría:
IGBT
Tags
FGY
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
FGY60T120SQDN 1200V 60A Ultra Field Stop IGBT
ON Semiconductor FGY60T120SQDN 1200V 60A Ultra Field Stop IGBT (Insulated Gate Bipolar Transistor) features a robust and cost effective Ultra Field Stop Trench construction. The FGY60T120SQDN provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The FGY60T120SQDN also features an integrated soft and fast co-packaged free wheeling diode with a low forward voltage for fast recovery.
Parte # Mfg. Descripción Valores Precio
FGY60T120SQDN
DISTI # V99:2348_22865638		ON SemiconductorIGBT 1200V 60A UFS0
  • 450000:$4.4170
  • 225000:$4.4230
  • 45000:$5.4410
  • 4500:$7.6630
  • 450:$8.0600
FGY60T120SQDN
DISTI # FGY60T120SQDNOS-ND		ON SemiconductorIGBT 1200V 60A UFS
RoHS: Not compliant
Min Qty: 1
Container: Tube		On Order
  • 900:$5.5172
  • 450:$6.0512
  • 25:$7.2968
  • 10:$7.6530
  • 1:$8.4700
FGY60T120SQDN
DISTI # FGY60T120SQDN		ON SemiconductorTrans IGBT Chip N-CH 1200V 120A 3-Pin TO-247 Tube - Rail/Tube (Alt: FGY60T120SQDN)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 4500:$4.0900
  • 2700:$4.1900
  • 1800:$4.2900
  • 450:$4.3900
  • 900:$4.3900
FGY60T120SQDN
DISTI # FGY60T120SQDN		ON SemiconductorTrans IGBT Chip N-CH 1200V 120A 3-Pin TO-247 Tube (Alt: FGY60T120SQDN)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 500:€4.2900
  • 1000:€4.2900
  • 100:€4.3900
  • 50:€4.4900
  • 25:€4.7900
  • 10:€4.8900
  • 1:€6.0900
FGY60T120SQDN
DISTI # 85AC2840		ON SemiconductorIGBT 1200V 60A UFS0
  • 500:$4.4100
  • 250:$4.5500
  • 100:$5.4300
  • 50:$5.8300
  • 25:$6.2400
  • 10:$6.8500
  • 1:$7.6300
FGY60T120SQDN
DISTI # 863-FGY60T120SQDN		ON SemiconductorIGBT Transistors IGBT 1200V 60A UFS
RoHS: Compliant		0
  • 1:$8.0600
  • 10:$7.2800
  • 25:$6.9500
  • 100:$6.0300
  • 250:$5.7600
  • 500:$5.2500
  • 1000:$4.5700
FGY60T120SQDN
DISTI # 3010444		ON SemiconductorIGBT, 1.2KV, 120A, 175DEG C, 517W
RoHS: Compliant		0
  • 250:$6.4100
  • 100:$7.5900
  • 50:$8.2000
  • 10:$8.8100
  • 5:$9.9700
  • 1:$10.7600
FGY60T120SQDN
DISTI # 3010444		ON SemiconductorIGBT, 1.2KV, 120A, 175DEG C, 517W0
  • 100:£4.3700
  • 50:£4.7100
  • 10:£5.0400
  • 5:£5.8400
  • 1:£6.3700
Imagen Parte # Descripción
FGY60T120SQDN

Mfr.#: FGY60T120SQDN

OMO.#: OMO-FGY60T120SQDN

 IGBT Transistors IGBT 1200V 60A UFS
FGY60T120SQDN

Mfr.#: FGY60T120SQDN

OMO.#: OMO-FGY60T120SQDN-ON-SEMICONDUCTOR

 IGBT 1200V 60A UFS
Disponibilidad
Valores:
349
En orden:
2332
Ingrese la cantidad:
El precio actual de FGY60T120SQDN es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
8,06 US$
8,06 US$
10
7,28 US$
72,80 US$
25
6,95 US$
173,75 US$
100
6,03 US$
603,00 US$
250
5,76 US$
1 440,00 US$
500
5,25 US$
2 625,00 US$
1000
4,57 US$
4 570,00 US$
2500
4,40 US$
11 000,00 US$
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