DI9956T

Mfr. #:: DI9956T
Fabricante:: Diodes Incorporated
Descripción:: MOSFET 2N-CH 30V 3.7A 8-SOIC
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: DI9956T Ficha de datos
Entrega:: DHL FedEx Ups TNT EMS
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ECAD Model:

Atributo del producto
Valor de atributo

Fabricante: Diodos incorporados

categoria de producto: FET: matrices

Serie: -

embalaje: Tape & Reel (TR)

Paquete-Estuche: 8-SOIC (0.154", 3.90mm Width)

Temperatura de funcionamiento: -55°C ~ 150°C (TJ)

Tipo de montaje: Montaje superficial

Paquete de dispositivo de proveedor: 8-SOP

Tipo FET: 2 N-Channel (Dual)

Potencia máxima: 2W

Drenaje-a-fuente-voltaje-Vdss: 30V

Entrada-Capacitancia-Ciss-Vds: 320pF @ 10V

Función FET: Puerta de nivel lógico

Corriente-Continuo-Drenaje-Id-25 ° C: 3.7A

Rds-On-Max-Id-Vgs: 80 mOhm @ 2.2A, 10V

Vgs-th-Max-Id: 2.8V @ 250μA

Puerta-Carga-Qg-Vgs: 27nC @ 10V

Tags: DI9956, DI995, DI99, DI9

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

DI9956T Descripción

***i-Key: MOSFET 2N-CH 30V 3.7A 8-SOIC

***(Formerly Allied Electronics): MOSFET, Power; P-Ch; VDSS -30V; RDS(ON) 0.07Ohm; ID -4.6A; SO-8; PD 2.5W; VGS +/-20V

*** Source Electronics: Trans MOSFET P-CH Si 30V 4.6A 8-Pin SOIC N T/R / MOSFET P-CH 30V 4.6A 8-SOIC

***eco: Transistor MOSFET P Channel 30 Volt 4.6 Amp 8 Pin SOIC

***ure Electronics: Single P-Channel 30 V 0.13 Ohm 40 nC HEXFET® Power Mosfet - SOIC-8

***ter Electronics: MOSFET, P-CHANNEL, -30V, -4.6A, 70 MOHM, 27 NC QG, SO-8

***ineon SCT: -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET

***ark: P CHANNEL MOSFET, -30V, 4.6A, SOIC; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:4.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***ure Electronics: Dual N & P-Channel 30 V 65 mOhm Surface Mount Field Effect Transistor - SOIC-8

***Yang: Trans MOSFET N/P-CH 30V 3.9A/3.5A 8-Pin SOIC N T/R - Tape and Reel

***emi: Dual N & P Channel Enhancement Mode Field Effect Transistor

***r Electronics: Power Field-Effect Transistor, 3.9A I(D), 30V, 0.065ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

***rchild Semiconductor: These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

***emi: Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 30V , 4A, 56mΩ

***ure Electronics: N-Channel 30 V 56 mOhm Integrated PowerTrench® Mosfet SOIC-8

***et: Trans MOSFET N-CH 30V 4A 8-Pin SOIC N T/R

***ment14 APAC: MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):56mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Typ:225pF; Current Id Max:4A; On State Resistance Max:56mohm; Package / Case:SOIC; Pin Configuration:A(1&2), S(3), G(4), C(7&8), D(6&5); Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:20A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V; Voltage Vgs th Min:1V

***rchild Semiconductor: The FDFS6N754 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO- 8 package.This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.

***et: Transistor MOSFET Array Dual P-CH 30V 4.4A 8-Pin SOIC T/R

***ure Electronics: Dual P-Channel 30 V 0.07 Ohm Enhancement Mode MOSFET - SOIC-8

***(Formerly Allied Electronics): MOSFET Dual P-Channel 30V 4.4A SOIC8

***des Inc SCT: Dual P-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS

***ical: Trans MOSFET P-CH 30V 4A 8-Pin SOIC N T/R

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-4A; On Resistance, Rds(on):65mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

***rchild Semiconductor: These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

***ment14 APAC: MOSFET, DUAL, PP, LOGIC, SO-8; Module Configuration:Dual; Transistor Polarity:P Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.6V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-4A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:2; Package / Case:SOIC; Pin Configuration:c; Pin Format:1 S1; 2 G1; 3 S2; 4 G2; 5 D2; 6 D2; 7 D1; 8 D1; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:15A; Row Pitch:6.3mm; SMD Marking:NDS8947; Termination Type:SMD; Voltage Vds Typ:-30V; Voltage Vgs Max:-20V; Voltage Vgs Rds on Measurement:-10V

***ark: Dual Mosfet, Dual P Channel, -4 A, -30 V, 0.07 Ohm, 10 V, 1 V Rohs Compliant: Yes

***(Formerly Allied Electronics): MOSFET, Power;Dual P-Ch;VDSS 30V;RDS(ON) 0.07Ohm;ID 4A;SO-8;PD 2W;VGS +/-16V;-55

***ure Electronics: Dual P-Channel 30 V 0.08 Ohm Surface Mount STripFET MosFet - SOIC-8

***icroelectronics: DUAL P-CHANNEL 30V - 0.07 OHM - 4A SO-8 STripFET POWER MOSFET

***nell: MOSFET, PP CH, 30V, 4A, 8SOIC; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: -4A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.07ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 2W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C

Market price

Parte #	Mfg.	Descripción	Valores	Precio
DI9956T DISTI # 981-DI9956T-CHP	Diodes Incorporated	MOSFET 2N-CH 30V 3.7A 8-SOIC RoHS: Not compliant Min Qty: 2500 Container: Tape & Reel (TR)	2500In Stock	2500:$1.2180
DI9956T DISTI # DI9956CT-ND	Diodes Incorporated	MOSFET 2N-CH 30V 3.7A 8-SOIC RoHS: Not compliant Min Qty: 1 Container: Cut Tape (CT)	1294In Stock	500:$1.2545 100:$1.2904 10:$1.4520 1:$1.7300
DI9956T DISTI # DI9956TR-ND	Diodes Incorporated	MOSFET 2N-CH 30V 3.7A 8-SOIC RoHS: Not compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call

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Disponibilidad

Valores:: Available
En orden:: 2500
Ingrese la cantidad:

El precio actual de DI9956T es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~1,83 US$~~; ~~1,83 US$~~

10: ~~1,74 US$~~; ~~17,36 US$~~

100: ~~1,64 US$~~; ~~164,43 US$~~

500: ~~1,55 US$~~; ~~776,50 US$~~

1000: ~~1,46 US$~~; ~~1 461,60 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

Empezar con

DI9956 4
DI995 6
DI99 9
DI9 38

DI9956T

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes