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SISS27DN-T1-GE3

SISS27DN-T1-GE3
Mfr. #:
SISS27DN-T1-GE3
Fabricante:
Vishay
Descripción:
IGBT Transistors MOSFET -30V 5.6mOhm@10V -50A P-Ch G-III
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SISS27DN-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Más información:
SISS27DN-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante
VISHAY
categoria de producto
FET - Single
Serie
SISxxxDN
embalaje
Carrete
Estilo de montaje
SMD / SMT
Nombre comercial
TrenchFET Power MOSFET
Paquete-Estuche
PowerPAK-1212-8
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 P-Channel
Disipación de potencia Pd
57 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
20 ns
Hora de levantarse
45 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
- 50 A
Vds-Drain-Source-Breakdown-Voltage
- 30 V
Vgs-th-Gate-Source-Threshold-Voltage
- 1 V to - 2.2 V
Resistencia a la fuente de desagüe de Rds
5.6 mOhms
Polaridad del transistor
P-Channel
Tiempo de retardo de apagado típico
50 ns
Tiempo de retardo de encendido típico
60 ns
Qg-Gate-Charge
45 nC
Transconductancia directa-Mín.
52 S
Modo de canal
Mejora
Tags
SISS27D, SISS27, SISS2, SISS, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET® P-Channel MOSFETs
Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.
Parte # Mfg. Descripción Valores Precio
SISS27DN-T1-GE3
DISTI # SISS27DN-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 30V 50A PPAK 1212-8S
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.3402
SISS27DN-T1-GE3
DISTI # SISS27DN-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CH 30V 50A PPAK 1212-8S
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.3867
  • 500:$0.4833
  • 100:$0.6525
  • 10:$0.8460
  • 1:$0.9700
SISS27DN-T1-GE3
DISTI # SISS27DN-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CH 30V 50A PPAK 1212-8S
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.3867
  • 500:$0.4833
  • 100:$0.6525
  • 10:$0.8460
  • 1:$0.9700
SISS27DN-T1-GE3
DISTI # SISS27DN-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 30V 23A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SISS27DN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.3099
  • 6000:$0.3009
  • 12000:$0.2889
  • 18000:$0.2809
  • 30000:$0.2729
SISS27DN-T1-GE3
DISTI # SISS27DN-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 30V 23A 8-Pin PowerPAK 1212 T/R (Alt: SISS27DN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SISS27DN-T1-GE3
    DISTI # 99W9575    		Vishay IntertechnologiesP-CHANNEL 30-V (D-S) MOSFET0
    • 1:$0.3670
    • 5000:$0.3590
    • 10000:$0.3310
    • 20000:$0.3100
    • 30000:$0.2880
    • 50000:$0.2760
    SISS27DN-T1-GE3
    DISTI # 70459595    		Vishay SiliconixSISS27DN-T1-GE3 P-channel MOSFET Transistor,23 A,30 V,8-Pin PowerPAK 1212
    RoHS: Compliant    		0
    • 3000:$0.9590
    SISS27DN-T1-GE3
    DISTI # 78-SISS27DN-T1-GE3    		Vishay IntertechnologiesMOSFET -30V Vds 20V Vgs PowerPAK 1212-8S
    RoHS: Compliant    		0
    • 1:$0.8500
    • 10:$0.6810
    • 100:$0.5170
    • 500:$0.4270
    • 1000:$0.3420
    • 3000:$0.3100
    SISS27DN-T1-GE3
    DISTI # 8141323    		Vishay IntertechnologiesTRANS MOSFET P-CH 30V 23A, PK100
    • 20:£0.1870
    • 100:£0.1840
    SISS27DN-T1-GE3Vishay IntertechnologiesMOSFET -30V Vds 20V Vgs PowerPAK 1212-8SAmericas - Stock
      Imagen Parte # Descripción
      SISS27DN-T1-GE3

      Mfr.#: SISS27DN-T1-GE3

      OMO.#: OMO-SISS27DN-T1-GE3

      		 MOSFET -30V Vds 20V Vgs PowerPAK 1212-8S
      SISS27DN-T1-GE3

      Mfr.#: SISS27DN-T1-GE3

      OMO.#: OMO-SISS27DN-T1-GE3-VISHAY

      		 IGBT Transistors MOSFET -30V 5.6mOhm@10V -50A P-Ch G-III
      SISS27DN

      Mfr.#: SISS27DN

      OMO.#: OMO-SISS27DN-1190

      		 Nuevo y original
      SISS27DN-T1-G3

      Mfr.#: SISS27DN-T1-G3

      OMO.#: OMO-SISS27DN-T1-G3-1190

      		 Nuevo y original
      Disponibilidad
      Valores:
      Available
      En orden:
      3000
      Ingrese la cantidad:
      El precio actual de SISS27DN-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,41 US$
      0,41 US$
      10
      0,39 US$
      3,89 US$
      100
      0,37 US$
      36,84 US$
      500
      0,35 US$
      173,95 US$
      1000
      0,33 US$
      327,50 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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