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SCT2H12NYTB

SCT2H12NYTB
Mfr. #:
SCT2H12NYTB
Fabricante:
Rohm Semiconductor
Descripción:
MOSFET N-Ch 1700V 4A 44W SiC Silicon Carbide
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SCT2H12NYTB Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
SCT2H12NYTB más información
Atributo del producto
Valor de atributo
Fabricante:
Semiconductor ROHM
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Sic
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-268-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
1700 V
Id - Corriente de drenaje continua:
4 A
Rds On - Resistencia de la fuente de drenaje:
1.15 Ohms
Vgs th - Voltaje umbral puerta-fuente:
1.6 V
Vgs - Voltaje puerta-fuente:
22 V
Qg - Carga de puerta:
14 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
44 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Carrete
Serie:
SCT2x
Tipo de transistor:
1 N-Channel
Marca:
Semiconductor ROHM
Transconductancia directa - Mín .:
400 mS
Otoño:
74 ns
Tipo de producto:
MOSFET
Hora de levantarse:
21 ns
Cantidad de paquete de fábrica:
800
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
35 ns
Tiempo típico de retardo de encendido:
16 ns
Parte # Alias:
SCT2H12NY
Unidad de peso:
0.141096 oz
Tags
SCT2H, SCT2, SCT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 2, SiC N-Channel MOSFET, 4 A, 1700 V, 2 + Tab-Pin TO-268 ROHM SCT2H12NYTB
***ure Electronics
N-Channel 1700 V 1.5 Ohm Surface Mount SiC Power Mosfet - TO-268-2
***ical
Trans MOSFET N-CH SiC 1.7KV 4A 3-Pin(2+Tab) TO-268L T/R
***et
Trans MOSFET N-CH 1700V 4A 3-Pin TO-268 Emboss T/R
***ronik
SiC-N 1700V 4A 1150mOhm TO268
***i-Key
1700V 1.2 OHM 4A SIC FET
***
N-CH SIC PWR MOSF 1.7KV
***ark
Transistor Polarity:n Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:1.7Kv; On Resistance Rds(On):1.15Ohm; Rds(On) Test Voltage Vgs:18V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:44W; No. Of Pins:2Pins Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 1.7KV, 4A, TO-268; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:1.7kV; On Resistance Rds(on):1.15ohm; Rds(on) Test Voltage Vgs:18V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:44W; Transistor Case Style:TO-268; No. of Pins:2Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)
***nell
MOSFET, CA-N, 1,7KV, 4A, TO-268; Polarità Transistor:Canale N; Corrente Continua di Drain Id:4A; Tensione Drain Source Vds:1.7kV; Resistenza di Attivazione Rds(on):1.15ohm; Tensione Vgs di Misura Rds(on):18V; Tensione di Soglia Vgs:2.8V; Dissipazione di Potenza Pd:44W; Modello Case Transistor:TO-268; No. di Pin:2Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018)
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
N-Channel SiC Power MOSFETs
ROHM Semiconductor N-Channel SiC (Silicon Carbide) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. In addition, low ON resistance minimizes power dissipation and provides greater energy savings.
Industrial Product Solutions
ROHM Industrial Product Solutions supply a quality lineup of products from passive devices and discretes to ICs and modules, providing total solutions at the system level. The Industrial Product Solutions have achieved high quality, technological capability, and a stable supply of products (over 10 years) creating innovative solutions in a highly integrated production system. These products meet the rapidly evolving needs of the industrial equipment market. ROHM continues to leverage its strengths providing optimized solutions tailored to customer sets.
Electronic Vehicle (EV) Solutions
ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to contribute to efficiency and improved performance in of state-of-the-art Electronic Vehicles (EV). ROHM offers products optimized for a variety of solutions, with focus on Dedicated EV Blocks, such as the Main Inverter, DC-DC Converter, On-board Charger, and Electric Compressor.
Parte # Mfg. Descripción Valores Precio
SCT2H12NYTB
DISTI # SCT2H12NYTBCT-ND		ROHM Semiconductor1700V 1.2 OHM 4A SIC FET
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2293In Stock
  • 100:$3.9969
  • 25:$4.6120
  • 10:$4.8780
  • 1:$5.4300
SCT2H12NYTB
DISTI # SCT2H12NYTBDKR-ND		ROHM Semiconductor1700V 1.2 OHM 4A SIC FET
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2293In Stock
  • 100:$3.9969
  • 25:$4.6120
  • 10:$4.8780
  • 1:$5.4300
SCT2H12NYTB
DISTI # SCT2H12NYTBTR-ND		ROHM Semiconductor1700V 1.2 OHM 4A SIC FET
RoHS: Compliant
Min Qty: 400
Container: Tape & Reel (TR)		2000In Stock
  • 2000:$2.6467
  • 1200:$2.7860
  • 800:$3.3034
  • 400:$3.6815
SCT2H12NYTB
DISTI # SCT2H12NYTB		ROHM SemiconductorTrans MOSFET N-CH 1700V 4A 3-Pin TO-268 Emboss T/R - Tape and Reel (Alt: SCT2H12NYTB)
RoHS: Compliant
Min Qty: 400
Container: Reel		Americas - 0
  • 4000:$2.4900
  • 2400:$2.5900
  • 1600:$2.6900
  • 800:$2.8900
  • 400:$3.0900
SCT2H12NYTB
DISTI # SCT2H12NYTB		ROHM SemiconductorTrans MOSFET N-CH 1700V 4A 3-Pin TO-268 Emboss T/R (Alt: SCT2H12NYTB)
RoHS: Compliant
Min Qty: 1
Container: Tape and Reel		Europe - 0
  • 1000:€3.2900
  • 500:€3.5900
  • 100:€3.6900
  • 50:€3.8900
  • 25:€3.9900
  • 10:€4.1900
  • 1:€4.5900
SCT2H12NYTB
DISTI # 18AC7649		ROHM SemiconductorMOSFET, N-CH, 1.7KV, 4A, TO-268,Transistor Polarity:N Channel,Continuous Drain Current Id:4A,Drain Source Voltage Vds:1.7kV,On Resistance Rds(on):1.15ohm,Rds(on) Test Voltage Vgs:18V,Threshold Voltage Vgs:2.8V,Power RoHS Compliant: Yes108
  • 250:$3.7700
  • 100:$3.9700
  • 50:$4.1800
  • 25:$4.4400
  • 10:$4.6300
  • 1:$5.3100
SCT2H12NYTB.
DISTI # 30AC0012		ROHM SemiconductorTransistor Polarity:N Channel,Continuous Drain Current Id:4A,Drain Source Voltage Vds:1.7kV,On Resistance Rds(on):1.15ohm,Rds(on) Test Voltage Vgs:18V,Threshold Voltage Vgs:2.8V,Power Dissipation Pd:44W,No. of Pins:2Pins RoHS Compliant: Yes800
  • 4000:$2.4900
  • 2400:$2.5900
  • 1600:$2.6900
  • 800:$2.8900
  • 1:$3.0900
SCT2H12NYTB
DISTI # 755-SCT2H12NYTB		ROHM SemiconductorMOSFET N-Ch 1700V 4A 44W SiC Silicon Carbide
RoHS: Compliant		2478
  • 1:$5.2600
  • 10:$4.4700
  • 100:$3.8800
  • 250:$3.6800
  • 400:$3.3000
  • 800:$2.7800
  • 2400:$2.6400
SCT2H12NYTB
DISTI # 1501510		ROHM SemiconductorMOSFET N-CH 1700V 4A SIC TO-268-2L, PK2
  • 100:£3.3600
  • 24:£3.5850
  • 12:£3.7550
  • 6:£4.0350
  • 2:£4.7050
SCT2H12NYTBROHM SemiconductorPOWER FIELD-EFFECT TRANSISTOR12
  • 13:$5.5200
  • 5:$6.0720
  • 1:$8.2800
SCT2H12NYTB
DISTI # TMOSP12912		ROHM SemiconductorSiC-N 1700V 4A 1150mOhm TO268
RoHS: Compliant		Stock DE - 1200Stock HK - 0Stock US - 0
  • 400:$5.6900
  • 800:$5.0400
SCT2H12NYTBROHM SemiconductorRoHS(ship within 1day)16
  • 1:$5.4400
  • 10:$4.0800
  • 50:$3.6000
  • 100:$3.0700
  • 500:$2.8600
  • 1000:$2.7600
SCT2H12NYTBROHM SemiconductorMOSFET N-Ch 1700V 4A 44W SiC Silicon Carbide
RoHS: Compliant		Americas - 1600
    SCT2H12NYTB
    DISTI # 2762593    		ROHM SemiconductorMOSFET, N-CH, 1.7KV, 4A, TO-268126
    • 100:£3.2200
    • 50:£3.3100
    • 10:£3.4100
    • 5:£4.0100
    • 1:£4.4500
    SCT2H12NYTB
    DISTI # 2762593    		ROHM SemiconductorMOSFET, N-CH, 1.7KV, 4A, TO-268
    RoHS: Compliant    		103
    • 25:$6.9600
    • 10:$7.3600
    • 1:$8.1800
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    Disponibilidad
    Valores:
    Available
    En orden:
    1985
    Ingrese la cantidad:
    El precio actual de SCT2H12NYTB es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    5,26 US$
    5,26 US$
    10
    4,47 US$
    44,70 US$
    100
    3,88 US$
    388,00 US$
    250
    3,68 US$
    920,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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