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IRF3205LPBF

IRF3205LPBF
Mfr. #:
IRF3205LPBF
Fabricante:
Infineon Technologies
Descripción:
MOSFET MOSFT 55V 110A 8mOhm 97.3nC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRF3205LPBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF3205LPBF DatasheetIRF3205LPBF Datasheet (P4-P6)IRF3205LPBF Datasheet (P7-P9)IRF3205LPBF Datasheet (P10-P11)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-262-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
55 V
Id - Corriente de drenaje continua:
110 A
Rds On - Resistencia de la fuente de drenaje:
8 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
97.3 nC
Pd - Disipación de energía:
200 W
Configuración:
Único
Embalaje:
Tubo
Altura:
9.45 mm
Longitud:
10.2 mm
Tipo de transistor:
1 N-Channel
Ancho:
4.5 mm
Marca:
Infineon Technologies
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Parte # Alias:
SP001564458
Unidad de peso:
0.084199 oz
Tags
IRF3205, IRF320, IRF32, IRF3, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
***roFlash
Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:110A; On Resistance, Rds(on):8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
Parte # Mfg. Descripción Valores Precio
IRF3205LPBF
DISTI # 30534295		Infineon Technologies AGTrans MOSFET N-CH Si 55V 110A 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant		212
  • 100:$0.5142
  • 23:$0.5313
IRF3205LPBF
DISTI # IRF3205LPBF-ND		Infineon Technologies AGMOSFET N-CH 55V 110A TO-262
RoHS: Compliant
Min Qty: 1
Container: Tube		1116In Stock
  • 1000:$0.6394
  • 500:$0.8099
  • 100:$1.0443
  • 10:$1.3210
  • 1:$1.4900
IRF3205LPBF
DISTI # C1S322000479829		Infineon Technologies AGTrans MOSFET N-CH Si 55V 110A 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant		212
  • 100:$0.8320
  • 50:$0.9900
  • 25:$1.1100
  • 5:$1.5200
IRF3205LPBF
DISTI # IRF3205LPBF		Infineon Technologies AGTrans MOSFET N-CH 55V 110A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IRF3205LPBF)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$0.4459
  • 2000:$0.4299
  • 4000:$0.4139
  • 6000:$0.4009
  • 10000:$0.3929
IRF3205LPBF
DISTI # SP001564458		Infineon Technologies AGTrans MOSFET N-CH 55V 110A 3-Pin(3+Tab) TO-262 (Alt: SP001564458)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€1.0969
  • 10:€0.9369
  • 25:€0.9349
  • 50:€0.9319
  • 100:€0.7129
  • 500:€0.6309
  • 1000:€0.4969
IRF3205LPBF
DISTI # 91Y4727		Infineon Technologies AGMOSFET, N-CH, 55V, 110A, TO-262-3,Transistor Polarity:N Channel,Continuous Drain Current Id:110A,Drain Source Voltage Vds:55V,On Resistance Rds(on):0.008ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes14
  • 1:$1.2800
  • 10:$1.0900
  • 100:$0.8340
  • 500:$0.7370
  • 1000:$0.5820
  • 2500:$0.5160
  • 10000:$0.4970
IRF3205LPBF
DISTI # 70018185		Infineon Technologies AGIRF3205LPBF N-channel MOSFET Transistor,110 A,55 V,3-Pin TO-262
RoHS: Compliant		0
  • 500:$2.8400
IRF3205LPBF
DISTI # 942-IRF3205LPBF		Infineon Technologies AGMOSFET MOSFT 55V 110A 8mOhm 97.3nC
RoHS: Compliant		1082
  • 1:$1.2800
  • 10:$1.0900
  • 100:$0.8340
  • 500:$0.7370
  • 1000:$0.5820
  • 2000:$0.5160
  • 10000:$0.4970
IRF3205LPBF
DISTI # 9075066		Infineon Technologies AGMOSFET N-CHANNEL HEXFET 55V 110A TO262, PK540
  • 10:£0.8770
  • 100:£0.6980
  • 500:£0.6060
  • 1000:£0.5030
  • 2500:£0.4710
IRF3205LPBF
DISTI # IRF3205LPBF		Infineon Technologies AGTransistor: N-MOSFET,unipolar,55V,110A,200W,TO26298
  • 1:$1.3400
  • 3:$1.2200
  • 10:$1.0200
  • 100:$0.9100
IRF3205LPBFInternational Rectifier 
RoHS: Compliant		Europe - 100
    IRF3205LPBF
    DISTI # 2579972    		Infineon Technologies AGMOSFET, N-CH, 55V, 110A, TO-262-3
    RoHS: Compliant    		14
    • 1:$2.1000
    • 10:$1.8300
    • 100:$1.4900
    • 500:$1.2600
    • 1000:$1.0900
    IRF3205LPBF
    DISTI # 2579972    		Infineon Technologies AGMOSFET, N-CH, 55V, 110A, TO-262-3
    RoHS: Compliant    		14
    • 5:£0.8770
    • 25:£0.8050
    • 100:£0.6310
    • 250:£0.6290
    • 500:£0.6270
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    Disponibilidad
    Valores:
    15
    En orden:
    1998
    Ingrese la cantidad:
    El precio actual de IRF3205LPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,27 US$
    1,27 US$
    10
    1,08 US$
    10,80 US$
    100
    0,83 US$
    83,40 US$
    500
    0,74 US$
    368,50 US$
    1000
    0,58 US$
    582,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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