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IPD60R360P7ATMA1

IPD60R360P7ATMA1
Mfr. #:
IPD60R360P7ATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPD60R360P7ATMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IPD60R360P7ATMA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-252-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
9 A
Rds On - Resistencia de la fuente de drenaje:
305 mOhms
Vgs th - Voltaje umbral puerta-fuente:
3 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
13 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
41 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
CoolMOS
Embalaje:
Carrete
Serie:
CoolMOS P7
Tipo de transistor:
1 N-Channel
Marca:
Infineon Technologies
Otoño:
10 ns
Tipo de producto:
MOSFET
Hora de levantarse:
7 ns
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
42 ns
Tiempo típico de retardo de encendido:
8 ns
Parte # Alias:
IPD60R360P7 SP001606048
Unidad de peso:
0.011993 oz
Tags
IPD60R360P7, IPD60R360P, IPD60R36, IPD60R3, IPD60R, IPD60, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 650 V 360 mOhm 13 nC CoolMOS™ Power Mosfet - DPAK
***ark
Mosfet, N-Ch, 600V, 9A, To-252; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.305Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipationrohs Compliant: Yes |Infineon IPD60R360P7ATMA1
*** Stop Electro
Power Field-Effect Transistor, 9A I(D), 600V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ineon
The 600V CoolMOS P7 is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS 7th generation platform ensure its high efficiency. | Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
600V CoolMOS P7 MOSFETs
Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
Parte # Mfg. Descripción Valores Precio
IPD60R360P7ATMA1
DISTI # V72:2272_17072161		Infineon Technologies AGTrans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R2490
  • 1000:$0.6776
  • 500:$0.8240
  • 250:$0.9411
  • 100:$0.9792
  • 25:$1.2466
  • 10:$1.2701
  • 1:$1.6336
IPD60R360P7ATMA1
DISTI # V36:1790_17072161		Infineon Technologies AGTrans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R0
    IPD60R360P7ATMA1
    DISTI # IPD60R360P7ATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 650V 9A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		2305In Stock
    • 1000:$0.7423
    • 500:$0.9403
    • 100:$1.1383
    • 10:$1.4600
    • 1:$1.6300
    IPD60R360P7ATMA1
    DISTI # IPD60R360P7ATMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 650V 9A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		2305In Stock
    • 1000:$0.7423
    • 500:$0.9403
    • 100:$1.1383
    • 10:$1.4600
    • 1:$1.6300
    IPD60R360P7ATMA1
    DISTI # IPD60R360P7ATMA1TR-ND    		Infineon Technologies AGMOSFET N-CH 650V 9A TO252-3
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)    		On Order
    • 5000:$0.6406
    • 2500:$0.6727
    IPD60R360P7ATMA1
    DISTI # 31970613    		Infineon Technologies AGTrans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R2490
    • 1000:$0.6776
    • 500:$0.8240
    • 250:$0.9411
    • 100:$0.9792
    • 25:$1.2466
    • 11:$1.2701
    IPD60R360P7ATMA1
    DISTI # IPD60R360P7ATMA1    		Infineon Technologies AGLOW POWER_NEW - Tape and Reel (Alt: IPD60R360P7ATMA1)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 25000:$0.5809
    • 15000:$0.5909
    • 10000:$0.6119
    • 5000:$0.6349
    • 2500:$0.6589
    IPD60R360P7ATMA1
    DISTI # 34AC1679    		Infineon Technologies AGMOSFET, N-CH, 600V, 9A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:9A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.305ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power DissipationRoHS Compliant: Yes74
    • 1000:$0.7400
    • 500:$0.9100
    • 250:$0.9630
    • 100:$1.0200
    • 50:$1.1100
    • 25:$1.2100
    • 10:$1.3000
    • 1:$1.5000
    IPD60R360P7ATMA1
    DISTI # 726-IPD60R360P7ATMA1    		Infineon Technologies AGMOSFET
    RoHS: Compliant    		21457
    • 1:$1.5000
    • 10:$1.2800
    • 100:$0.9840
    • 500:$0.8700
    • 1000:$0.6870
    IPD60R360P7ATMA1
    DISTI # 2784038    		Infineon Technologies AGMOSFET, N-CH, 600V, 9A, TO-252
    RoHS: Compliant    		74
    • 5000:$0.9380
    • 1000:$0.9830
    • 500:$1.0400
    • 250:$1.2100
    • 100:$1.4300
    • 25:$1.7500
    • 5:$2.0100
    IPD60R360P7ATMA1
    DISTI # 2784038    		Infineon Technologies AGMOSFET, N-CH, 600V, 9A, TO-2522169
    • 500:£0.6840
    • 250:£0.7290
    • 100:£0.7740
    • 25:£1.0100
    • 5:£1.1100
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    Disponibilidad
    Valores:
    20
    En orden:
    2003
    Ingrese la cantidad:
    El precio actual de IPD60R360P7ATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,50 US$
    1,50 US$
    10
    1,28 US$
    12,80 US$
    100
    0,98 US$
    98,40 US$
    500
    0,87 US$
    435,00 US$
    1000
    0,69 US$
    687,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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