IPP65R110CFDAAKSA1

IPP65R110CFDAAKSA1
Mfr. #:
IPP65R110CFDAAKSA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-Ch 650V 31.2A TO220-3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPP65R110CFDAAKSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IPP65R110CFDAAKSA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
650 V
Id - Corriente de drenaje continua:
31.2 A
Rds On - Resistencia de la fuente de drenaje:
110 mOhms
Configuración:
Único
Nombre comercial:
CoolMOS
Embalaje:
Tubo
Altura:
15.65 mm
Longitud:
10 mm
Serie:
CoolMOS CFDA
Tipo de transistor:
1 N-Channel
Ancho:
4.4 mm
Marca:
Infineon Technologies
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
500
Subcategoría:
MOSFET
Parte # Alias:
IPP65R110CFDA IPP65R11CFDAXK SP000895234
Unidad de peso:
0.211644 oz
Tags
IPP65R110CFDA, IPP65R11, IPP65R1, IPP65, IPP6, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 650V 31.2A Automotive 3-Pin(3+Tab) TO-220 Tube
***et Europe
Trans MOSFET N-CH 650V 31.2A 3-Pin TO-220 Tube
*** Source Electronics
Metal Oxide Semiconductor Field Effect Transistor
***i-Key
MOSFET N-CH 650V TO-220-3
***ronik
N-CH 650V 31,2A 110mOhm TO220-3
***ark
MOSFET, AEC-Q101, N-CH, 650V, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:31.2A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.099ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, AEC-Q101, N-CH, 650V, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:31.2A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.099ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:277.8W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS Series; Automotive Qualification Standard:AEC-Q101; SVHC:No SVHC (15-Jan-2019)
***nell
MOSFET, AEC-Q101, CAN N, 650V, TO-220-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:31.2A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.099ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:277.8W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS Series; Standard di Qualifica Automotive:AEC-Q101; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2019)
***ineon
650V CoolMOS CFDA is Infineon's second generation of market leading automotive qualified high voltage CoolMOS MOSFET. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFDA series provides now also an integrated fast body diode. | Summary of Features: First 650V automotive qualified technology with integrated fast body diode on the market; Limited voltage overshoot during hard commutation self limiting di/dt and dv/dt; Low gate charge value Q g; Low Q rr at repetitive commutation on body diode & lowQ oss; Reduced turn on and turn of delay times; Compliant to AEC Q101 standard | Benefits: Increased safety margin due to higher breakdown voltage; Reduced EMI appearance and easy to design in; Better light load efficiency; Lower switching losses; Higher switching frequency and/or higher duty cycle possible; High quality and reliability | Target Applications: Unidirectional and bidirectional DC-DC converter; Battery charger; HID lighting
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Parte # Mfg. Descripción Valores Precio
IPP65R110CFDAAKSA1
DISTI # IPP65R110CFDAAKSA1-ND
Infineon Technologies AGMOSFET N-CH 650V TO-220-3
RoHS: Compliant
Min Qty: 1
Container: Tube
458In Stock
  • 1000:$3.8455
  • 500:$4.5597
  • 100:$5.6310
  • 10:$6.8670
  • 1:$7.6900
IPP65R110CFDAAKSA1
DISTI # IPP65R110CFDAAKSA1
Infineon Technologies AGTrans MOSFET N-CH 650V 31.2A 3-Pin TO-220 Tube - Rail/Tube (Alt: IPP65R110CFDAAKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube
Americas - 0
  • 500:$3.4900
  • 1000:$3.3900
  • 2000:$3.2900
  • 3000:$3.1900
  • 5000:$3.0900
IPP65R110CFDAAKSA1
DISTI # IPP65R110CFDA
Infineon Technologies AGTrans MOSFET N-CH 650V 31.2A 3-Pin TO-220 Tube (Alt: IPP65R110CFDA)
RoHS: Compliant
Min Qty: 500
Container: Tube
Asia - 0
    IPP65R110CFDAAKSA1
    DISTI # 726-IPP65R110CFDAAKS
    Infineon Technologies AGMOSFET N-Ch 650V 31.2A TO220-3
    RoHS: Compliant
    263
    • 1:$6.6100
    • 10:$5.6200
    • 100:$4.8700
    • 250:$4.6200
    • 500:$4.1500
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    Disponibilidad
    Valores:
    736
    En orden:
    2719
    Ingrese la cantidad:
    El precio actual de IPP65R110CFDAAKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    6,61 US$
    6,61 US$
    10
    5,61 US$
    56,10 US$
    100
    4,87 US$
    487,00 US$
    250
    4,62 US$
    1 155,00 US$
    500
    4,14 US$
    2 070,00 US$
    1000
    3,49 US$
    3 490,00 US$
    2500
    3,32 US$
    8 300,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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