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RQ3E100MNTB1

RQ3E100MNTB1
Mfr. #:
RQ3E100MNTB1
Fabricante:
Rohm Semiconductor
Descripción:
MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
RQ3E100MNTB1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Semiconductor ROHM
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
HSMT-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
10 A
Rds On - Resistencia de la fuente de drenaje:
8.8 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2.5 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
9.9 nC
Pd - Disipación de energía:
2 W
Configuración:
Único
Embalaje:
Carrete
Tipo de transistor:
1 N-Channel
Marca:
Semiconductor ROHM
Otoño:
6 ns
Tipo de producto:
MOSFET
Hora de levantarse:
17 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
31 ns
Tiempo típico de retardo de encendido:
7 ns
Tags
RQ3E100M, RQ3E10, RQ3E1, RQ3E, RQ3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***hard Electronics
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***ark
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***ineon
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***nell
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*** Source Electronics
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***ark
N Channel Mosfet, 30V, 11A, Soic; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11A; On Resistance Rds(On):0.0119Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***Yang
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***emi
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***ure Electronics
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***et Europe
Trans MOSFET N-CH 30V 12.5A 8-Pin SOIC N T/R
***rchild Semiconductor
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
***ment14 APAC
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:12.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):9.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:12.5A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:50A; SMD Marking:FDS6680A; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1V
*** Source Electronics
MOSFET P-CH 30V 19.7A 8-SOIC / Trans MOSFET P-CH 30V 19.7A 8-Pin SOIC N T/R
***ure Electronics
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***ment14 APAC
MOSFET, P-CH, 30V, 19.7A, SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:-19.7A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):8.1mohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:5.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-19.7A; Power Dissipation Pd:5.7W; Voltage Vgs Max:20V
***eco
Transistor MOSFET Negative Channel 30 Volt 13A 8-Pin SOIC T/R
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***ure Electronics
Single N-Channel 30 V 0.011 Ohm 52 nC HEXFET® Power Mosfet - SOIC-8
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low Switching Losses; Low Conduction Losses
***ical
Trans MOSFET N-CH 30V 13A 8-Pin SOIC Tube
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***el Electronic
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***nell
MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.011ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipat
***emi
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***et Europe
Trans MOSFET N-CH 30V 13A 8-Pin SOIC N T/R
***ment14 APAC
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:30V; On Resistance Rds(on):11.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:3W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:13A; Package / Case:SOIC-8; Power Dissipation Pd:3W; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Parte # Mfg. Descripción Valores Precio
RQ3E100MNTB1
DISTI # RQ3E100MNTB1TR-ND		ROHM SemiconductorMOSFET N-CH 30V 10A HSMT8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 3000:$0.4200
RQ3E100MNTB1
DISTI # RQ3E100MNTB1CT-ND		ROHM SemiconductorMOSFET N-CH 30V 10A HSMT8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2428In Stock
  • 1000:$0.4635
  • 500:$0.5871
  • 100:$0.7571
  • 10:$0.9580
  • 1:$1.0800
RQ3E100MNTB1
DISTI # RQ3E100MNTB1DKR-ND		ROHM SemiconductorMOSFET N-CH 30V 10A HSMT8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Limited Supply - Call
    RQ3E100MNTB1
    DISTI # RQ3E100MNTB1    		ROHM SemiconductorRQ3E100MNTB1 - Tape and Reel (Alt: RQ3E100MNTB1)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 30000:$0.2819
    • 18000:$0.2899
    • 12000:$0.3069
    • 6000:$0.3259
    • 3000:$0.3479
    RQ3E100MNTB1
    DISTI # 755-RQ3E100MNTB1    		ROHM SemiconductorMOSFET
    RoHS: Compliant    		0
      RQ3E100MNTB1ROHM Semiconductor 3000
      • 1:¥23.4681
      • 100:¥12.2738
      • 1000:¥6.7015
      • 1500:¥4.5436
      • 3000:¥3.3850
      Imagen Parte # Descripción
      RQ3E100ATTB

      Mfr.#: RQ3E100ATTB

      OMO.#: OMO-RQ3E100ATTB

      		 MOSFET PCH -30V -31A POWER
      RQ3E100MNTB1

      Mfr.#: RQ3E100MNTB1

      OMO.#: OMO-RQ3E100MNTB1

      		 MOSFET
      RQ3E100BN

      Mfr.#: RQ3E100BN

      OMO.#: OMO-RQ3E100BN-1190

      		 Nuevo y original
      RQ3E100BNFU7TB

      Mfr.#: RQ3E100BNFU7TB

      OMO.#: OMO-RQ3E100BNFU7TB-1190

      		 Nuevo y original
      RQ3E100BNTB1

      Mfr.#: RQ3E100BNTB1

      OMO.#: OMO-RQ3E100BNTB1-1190

      		 Nuevo y original
      RQ3E100MN

      Mfr.#: RQ3E100MN

      OMO.#: OMO-RQ3E100MN-1190

      		 Nuevo y original
      RQ3E100MNFU

      Mfr.#: RQ3E100MNFU

      OMO.#: OMO-RQ3E100MNFU-1190

      		 Nuevo y original
      RQ3E100MNFU7TB1

      Mfr.#: RQ3E100MNFU7TB1

      OMO.#: OMO-RQ3E100MNFU7TB1-1190

      		 Nuevo y original
      RQ3E100MNTB

      Mfr.#: RQ3E100MNTB

      OMO.#: OMO-RQ3E100MNTB-1190

      		 Nuevo y original
      RQ3E100MNTB1

      Mfr.#: RQ3E100MNTB1

      OMO.#: OMO-RQ3E100MNTB1-ROHM-SEMI

      		 MOSFET N-CH 30V 10A HSMT8
      Disponibilidad
      Valores:
      Available
      En orden:
      5500
      Ingrese la cantidad:
      El precio actual de RQ3E100MNTB1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,99 US$
      0,99 US$
      10
      0,84 US$
      8,40 US$
      100
      0,65 US$
      64,60 US$
      500
      0,57 US$
      285,50 US$
      1000
      0,45 US$
      450,00 US$
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