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IPB60R190P6ATMA1

IPB60R190P6ATMA1
Mfr. #:
IPB60R190P6ATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-CH 600V TO263-3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPB60R190P6ATMA1 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
embalaje
Carrete
Alias ​​de parte
IPB60R190P6 SP001364462
Unidad de peso
0.068654 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
TO-263-3
Tecnología
Si
Configuración
1 N-Channel
Disipación de potencia Pd
151 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
7 ns
Hora de levantarse
8 ns
Vgs-Puerta-Fuente-Voltaje
+/- 20 V
Id-corriente-de-drenaje-continua
20.2 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Vgs-th-Gate-Source-Threshold-Voltage
3.5 V
Resistencia a la fuente de desagüe de Rds
445 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
45 ns
Tiempo de retardo de encendido típico
15 ns
Qg-Gate-Charge
37 nC
Modo de canal
Mejora
Tags
IPB60R190, IPB60R19, IPB60R1, IPB60R, IPB60, IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 190 mOhm 37 nC CoolMOS™ Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH 600V 20.2A 3-Pin(2+Tab) D2PAK T/R
***ineon
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
Parte # Mfg. Descripción Valores Precio
IPB60R190P6ATMA1
DISTI # V72:2272_09156918		Infineon Technologies AGTrans MOSFET N-CH 600V 20.2A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		299
  • 75000:$1.0948
  • 30000:$1.1870
  • 15000:$1.3189
  • 6000:$1.3272
  • 3000:$1.3395
  • 1000:$1.3463
  • 500:$1.3766
  • 250:$1.5367
  • 100:$1.7045
  • 50:$1.8171
  • 25:$2.1126
  • 10:$2.1988
  • 1:$2.7325
IPB60R190P6ATMA1
DISTI # IPB60R190P6ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 600V TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    IPB60R190P6ATMA1
    DISTI # IPB60R190P6ATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 600V TO263-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      IPB60R190P6ATMA1
      DISTI # IPB60R190P6ATMA1DKR-ND      		Infineon Technologies AGMOSFET N-CH 600V TO263-3
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        IPB60R190P6ATMA1
        DISTI # 26196097        		Infineon Technologies AGTrans MOSFET N-CH 600V 20.2A 3-Pin(2+Tab) D2PAK T/R
        RoHS: Compliant        		299
        • 6:$2.7325
        IPB60R190P6ATMA1
        DISTI # SP001364462        		Infineon Technologies AGTrans MOSFET N-CH 650V 20.2A 3-Pin TO-263 T/R (Alt: SP001364462)
        RoHS: Compliant
        Min Qty: 1000
        Container: Tape and Reel        		Europe - 0
        • 6000:€1.0900
        • 10000:€1.0900
        • 4000:€1.1900
        • 2000:€1.4900
        • 1000:€1.8900
        IPB60R190P6ATMA1
        DISTI # 726-IPB60R190P6ATMA1        		Infineon Technologies AGMOSFET HIGH POWER_LEGACY
        RoHS: Compliant        		0
        • 1:$2.6500
        • 10:$2.2500
        • 100:$1.8000
        • 500:$1.5800
        • 1000:$1.3100
        • 2000:$1.2200
        • 5000:$1.1700
        Imagen Parte # Descripción
        IPB60R190C6ATMA1

        Mfr.#: IPB60R190C6ATMA1

        OMO.#: OMO-IPB60R190C6ATMA1

        		 MOSFET N-Ch 600V 20.2A D2PAK-2 CoolMOS C6
        IPB60R199CP

        Mfr.#: IPB60R199CP

        OMO.#: OMO-IPB60R199CP

        		 MOSFET N-Ch 650V 16A D2PAK-2 CoolMOS CP
        IPB60R190C6 6R190C6

        Mfr.#: IPB60R190C6 6R190C6

        OMO.#: OMO-IPB60R190C6-6R190C6-1190

        		 Nuevo y original
        IPB60R190C6 (6R190C6)

        Mfr.#: IPB60R190C6 (6R190C6)

        OMO.#: OMO-IPB60R190C6-6R190C6--1190

        		 Nuevo y original
        IPB60R190C6S

        Mfr.#: IPB60R190C6S

        OMO.#: OMO-IPB60R190C6S-1190

        		 Nuevo y original
        IPB60R190P6

        Mfr.#: IPB60R190P6

        OMO.#: OMO-IPB60R190P6-1190

        		 MOSFET HIGH POWER_LEGACY
        IPB60R190P6ATMA1

        Mfr.#: IPB60R190P6ATMA1

        OMO.#: OMO-IPB60R190P6ATMA1-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 600V TO263-3
        IPB60R199CP

        Mfr.#: IPB60R199CP

        OMO.#: OMO-IPB60R199CP-1190

        		 Trans MOSFET N-CH 650V 16A 3-Pin TO-263 T/R (Alt: IPB60R199CP)
        IPB60R199CPATMA1

        Mfr.#: IPB60R199CPATMA1

        OMO.#: OMO-IPB60R199CPATMA1-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 650V 16A TO-263
        IPB60R199CR

        Mfr.#: IPB60R199CR

        OMO.#: OMO-IPB60R199CR-1190

        		 Nuevo y original
        Disponibilidad
        Valores:
        Available
        En orden:
        5500
        Ingrese la cantidad:
        El precio actual de IPB60R190P6ATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        1,64 US$
        1,64 US$
        10
        1,56 US$
        15,60 US$
        100
        1,48 US$
        147,80 US$
        500
        1,40 US$
        697,95 US$
        1000
        1,31 US$
        1 313,80 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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