NTP27N06G

Mfr. #:: NTP27N06G
Fabricante:: ON Semiconductor
Descripción:: MOSFET N-CH 60V 27A TO220AB
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: NTP27N06G Ficha de datos
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HTML Datasheet:: NTP27N06G Datasheet NTP27N06G Datasheet (P4-P6)NTP27N06G Datasheet (P7-P8)
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Tags: NTP27, NTP2, NTP

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NTP27N06G Descripción

***et: Trans MOSFET N-CH 60V 27A 3-Pin(3+Tab) TO-220AB Rail

***r Electronics: Power Field-Effect Transistor, 27A I(D), 60V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:27A; On Resistance, Rds(on):46mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.8V ;RoHS Compliant: Yes

***nell: MOSFET, N, 60V, TO-220; Transistor type:Enhancement; Voltage, Vds typ:60V; Current, Id cont:27A; Resistance, Rds on:0.046ohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:2.8V; Case style:TO-220 (SOT-78B); Power, Pd:88.2W; Termination Type:Through Hole; Transistor polarity:N; Voltage, Vds max:60V

***emi: Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 32 A, 35 mΩ, TO-220

***ment14 APAC: N CHANNEL MOSFET, 60V, 32A, TO-220; Tran; Transistor Polarity:N Channel; Continuous Drain Current Id:32A;

***ical: Trans MOSFET N-CH 60V 32A 3-Pin (3+Tab) TO-220AB Rail

***ure Electronics: N-Channel 60 V 40 mOhm Flange Mount Mosfet - TO-220

***r Electronics: Power Field-Effect Transistor, 32A I(D), 60V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications..

***emi: Power MOSFET 30 Amps, 60 Volts, Logic Level

***ponent Stockers USA: 30 A 60 V 0.046 ohm N-CHANNEL Si POWER MOSFET TO-220AB

***r Electronics: Power Field-Effect Transistor, 30A I(D), 60V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N, 60V, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:60V; On Resistance Rds(on):46mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:1.7V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:30A; Package / Case:TO-220; Power Dissipation Pd:88.2W; Power Dissipation Pd:88.2W; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:1.7V; Voltage Vgs Rds on Measurement:5V

***i-Key: MOSFET N-CH 60V 29A TO-220AB

***et: PWR MOS ULTRAFET 60V/30A/0.042 OHMS N-CH LL TO-220AB

***ser: MOSFETs 20a, 60V, 0.043 Ohm Logic Level N-Ch

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:29A; On Resistance, Rds(on):0.04ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-20 ;RoHS Compliant: Yes

***ure Electronics: Single N-Channel 60 V 0.05 Ohms Flange Mount Power Mosfet - TO-220-3

***ical: Trans MOSFET N-CH 60V 30A 3-Pin(3+Tab) TO-220AB

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N-CH, 60V, 30A, TO-220AB-3; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.05ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:88W; Transistor Case Style:TO-220AB; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:

***emi: Power MOSFET, N-Channel, QFET®, 60 V, 30 A, 40 mΩ, TO-220

***et Europe: Trans MOSFET N-CH 60V 30A 3-Pin(3+Tab) TO-220AB Rail

***ure Electronics: N-Channel 60 V 40 mOhm Flange Mount Mosfet - TO-220

***nell: MOSFET, N-CH, 60V, 30A, TO-220AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.031ohm; Available until stocks are exhausted Alternative available

***r Electronics: Power Field-Effect Transistor, 30A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.04Ohm;ID 29A;TO-220AB;PD 68W;VGS +/-20V

***ure Electronics: Single N-Channel 55 V 0.04 Ohm 34 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***essParts.Net: INTERNATIONAL RECTIFIER IRFZ34NPBF / MOSFET N-CH 55V 29A TO-220AB

***fin: Transistor NPN Field Effect IRFZ34N/IRFZ34NPBF INTERNATIONAL RECTIFIER RoHS Ampere=26 V=55 TO220

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:29A; On Resistance, Rds(on):40mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 29 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 40 / Gate-Source Voltage V = 20 / Fall Time ns = 40 / Rise Time ns = 49 / Turn-OFF Delay Time ns = 31 / Turn-ON Delay Time ns = 7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220AB / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 68

***nell: MOSFET, N, 55V, 26A, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:55V; Current, Id Cont:26A; Resistance, Rds On:0.04ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:100A; Device Marking:IRFZ34NPBF; Lead Spacing:2.54mm; No. of Pins:3; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation:56W; Power, Pd:56W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:2.7°C/W; Transistors, No. of:1; Voltage, Vds Max:55V

Market price

Parte #	Mfg.	Descripción	Valores	Precio
NTP27N06G DISTI # NTP27N06GOS-ND	ON Semiconductor	MOSFET N-CH 60V 27A TO220AB RoHS: Compliant Min Qty: 450 Container: Tube	Limited Supply - Call
NTP27N06G	ON Semiconductor	RoHS: Not Compliant	66	1000:$0.4600 500:$0.4900 100:$0.5100 25:$0.5300 1:$0.5700
NTP27N06 DISTI # 863-NTP27N06	ON Semiconductor	MOSFET 60V 27A N-Channel RoHS: Not compliant	0
NTP27N06G DISTI # 863-NTP27N06G	ON Semiconductor	MOSFET 60V 27A N-Channel RoHS: Compliant	0

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Disponibilidad

Valores:: Available
En orden:: 3500
Ingrese la cantidad:

El precio actual de NTP27N06G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~0,69 US$~~; ~~0,69 US$~~

10: ~~0,66 US$~~; ~~6,56 US$~~

100: ~~0,62 US$~~; ~~62,10 US$~~

500: ~~0,59 US$~~; ~~293,25 US$~~

1000: ~~0,55 US$~~; ~~552,00 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

Empezar con

NTP27 3
NTP2 18
NTP 368

NTP27N06G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes