FQP10N20C

FQP10N20C
Mfr. #:
FQP10N20C
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET 200V N-Ch MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FQP10N20C Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
200 V
Id - Corriente de drenaje continua:
9.5 A
Rds On - Resistencia de la fuente de drenaje:
360 mOhms
Vgs - Voltaje puerta-fuente:
30 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
72 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
QFET
Embalaje:
Tubo
Altura:
16.3 mm
Longitud:
10.67 mm
Serie:
FQP10N20C
Tipo de transistor:
1 N-Channel
Escribe:
MOSFET
Ancho:
4.7 mm
Marca:
ON Semiconductor / Fairchild
Transconductancia directa - Mín .:
5.5 S
Otoño:
72 ns
Tipo de producto:
MOSFET
Hora de levantarse:
92 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
70 ns
Tiempo típico de retardo de encendido:
11 ns
Unidad de peso:
0.063493 oz
Tags
FQP10N20C, FQP10N2, FQP10, FQP1, FQP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, QFET®, 200 V, 9.5 A, 360 mΩ, TO-220
***et Europe
Trans MOSFET N-CH 200V 9.5A 3-Pin(3+Tab) TO-220AB Rail
***ure Electronics
N-Channel 200 V 0.36 Ohm Through Hole Mosfet - TO-220
***r Electronics
Power Field-Effect Transistor, 9.5A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Parte # Mfg. Descripción Valores Precio
FQP10N20C
DISTI # 32638024
ON Semiconductor200V N-CHANNEL ADVANCE Q-FET C1000
  • 1000:$0.4158
FQP10N20C
DISTI # FQP10N20C-ND
ON SemiconductorMOSFET N-CH 200V 9.5A TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube
874In Stock
  • 5000:$0.4835
  • 3000:$0.5089
  • 1000:$0.5453
  • 100:$0.8361
  • 25:$1.0180
  • 10:$1.0720
  • 1:$1.2000
FQP10N20CTSTU
DISTI # FQP10N20CTSTU-ND
ON SemiconductorMOSFET N-CH 200V 9.5A TO-220
RoHS: Compliant
Min Qty: 1000
Container: Tube
Limited Supply - Call
    FQP10N20C
    DISTI # V99:2348_06301834
    ON Semiconductor200V N-CHANNEL ADVANCE Q-FET C0
      FQP10N20C
      DISTI # V36:1790_06301834
      ON Semiconductor200V N-CHANNEL ADVANCE Q-FET C0
      • 1000000:$0.3644
      • 500000:$0.3648
      • 100000:$0.4188
      • 10000:$0.5263
      • 1000:$0.5450
      FQP10N20C
      DISTI # FQP10N20C
      ON SemiconductorTrans MOSFET N-CH 200V 9.5A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: FQP10N20C)
      RoHS: Compliant
      Min Qty: 625
      Container: Bulk
      Americas - 0
      • 6250:$0.4929
      • 3125:$0.5059
      • 1875:$0.5119
      • 1250:$0.5189
      • 625:$0.5219
      FQP10N20C
      DISTI # FQP10N20C
      ON SemiconductorTrans MOSFET N-CH 200V 9.5A 3-Pin(3+Tab) TO-220AB Rail (Alt: FQP10N20C)
      RoHS: Compliant
      Min Qty: 1
      Europe - 0
      • 1000:€0.3729
      • 500:€0.4019
      • 100:€0.4359
      • 50:€0.4749
      • 25:€0.5229
      • 10:€0.5809
      • 1:€0.6539
      FQP10N20C
      DISTI # FQP10N20C
      ON SemiconductorTrans MOSFET N-CH 200V 9.5A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FQP10N20C)
      RoHS: Compliant
      Min Qty: 2000
      Container: Tube
      Americas - 0
      • 20000:$0.4649
      • 10000:$0.4769
      • 6000:$0.4829
      • 4000:$0.4889
      • 2000:$0.4919
      FQP10N20CTSTU
      DISTI # FQP10N20CTSTU
      ON Semiconductor- Bulk (Alt: FQP10N20CTSTU)
      RoHS: Not Compliant
      Min Qty: 1042
      Container: Bulk
      Americas - 0
      • 10420:$0.2959
      • 5210:$0.3029
      • 3126:$0.3069
      • 2084:$0.3109
      • 1042:$0.3129
      FQP10N20C
      DISTI # 84H4771
      ON SemiconductorMOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) RoHS Compliant: Yes0
      • 50000:$0.4650
      • 24000:$0.4790
      • 10000:$0.4960
      • 2000:$0.5200
      • 1000:$0.5370
      • 100:$0.7800
      • 10:$1.1200
      • 1:$1.4300
      FQP10N20C
      DISTI # 512-FQP10N20C
      ON SemiconductorMOSFET 200V N-Ch MOSFET
      RoHS: Compliant
      1098
      • 1:$1.1400
      • 10:$0.9700
      • 100:$0.7450
      • 500:$0.6580
      • 1000:$0.5200
      FQP10N20C_Q
      DISTI # 512-FQP10N20C_Q
      ON SemiconductorMOSFET 200V N-Ch MOSFET
      RoHS: Not compliant
      0
        FQP10N20CTSTU
        DISTI # 512-FQP10N20CTSTU
        ON SemiconductorMOSFET N-CH/200V/10A/QFET Short Leads
        RoHS: Compliant
        0
          FQP10N20CON SemiconductorPower Field-Effect Transistor, 9.5A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
          RoHS: Compliant
          6000
          • 1000:$0.4600
          • 500:$0.4900
          • 100:$0.5100
          • 25:$0.5300
          • 1:$0.5700
          FQP10N20CFairchild Semiconductor CorporationPower Field-Effect Transistor, 9.5A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
          RoHS: Compliant
          252266
          • 1000:$0.4600
          • 500:$0.4900
          • 100:$0.5100
          • 25:$0.5300
          • 1:$0.5700
          FQP10N20CTSTUFairchild Semiconductor CorporationPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
          RoHS: Compliant
          797
          • 1000:$0.3200
          • 500:$0.3300
          • 100:$0.3500
          • 25:$0.3600
          • 1:$0.3900
          FQP10N20C
          DISTI # 6714998
          ON SemiconductorMOSFET N-CHANNEL 200V 9.5A TO220AB, PK9300
          • 125:£0.3240
          • 5:£0.3320
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          Mfr.#: STM32L031K6T7

          OMO.#: OMO-STM32L031K6T7

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          Mfr.#: LP5912Q3.3DRVRQ1

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          STM32L031K6T7

          Mfr.#: STM32L031K6T7

          OMO.#: OMO-STM32L031K6T7-STMICROELECTRONICS

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          LP5912Q3.3DRVRQ1

          Mfr.#: LP5912Q3.3DRVRQ1

          OMO.#: OMO-LP5912Q3-3DRVRQ1-TEXAS-INSTRUMENTS

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          Mfr.#: MIC29302WT

          OMO.#: OMO-MIC29302WT-MICROCHIP-TECHNOLOGY

          IC REG LINEAR POS ADJ 3A TO220-5
          Disponibilidad
          Valores:
          Available
          En orden:
          1984
          Ingrese la cantidad:
          El precio actual de FQP10N20C es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
          Precio de referencia (USD)
          Cantidad
          Precio unitario
          Ext. Precio
          1
          1,14 US$
          1,14 US$
          10
          0,97 US$
          9,70 US$
          100
          0,74 US$
          74,50 US$
          500
          0,66 US$
          329,00 US$
          1000
          0,52 US$
          520,00 US$
          Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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