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MJE5851G

MJE5851G
Mfr. #:
MJE5851G
Fabricante:
ON Semiconductor
Descripción:
Bipolar Transistors - BJT 8A 350V 80W PNP
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
MJE5851G Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
MJE5851G DatasheetMJE5851G Datasheet (P4-P6)MJE5851G Datasheet (P7-P8)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores bipolares - BJT
RoHS:
Y
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Polaridad del transistor:
PNP
Configuración:
Único
Voltaje colector-emisor VCEO Max:
350 V
Colector- Voltaje base VCBO:
400 V
Emisor- Voltaje base VEBO:
6 V
Voltaje de saturación colector-emisor:
2 V
Corriente máxima del colector de CC:
8 A
Temperatura mínima de funcionamiento:
- 65 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
MJE5851
Altura:
15.75 mm
Longitud:
10.53 mm
Embalaje:
Tubo
Ancho:
4.83 mm
Marca:
EN Semiconductor
Corriente continua del colector:
8 A
Colector de CC / Ganancia base hfe Min:
15
Pd - Disipación de energía:
80 W
Tipo de producto:
BJT - Transistores bipolares
Cantidad de paquete de fábrica:
50
Subcategoría:
Transistores
Unidad de peso:
0.211644 oz
Tags
MJE5851, MJE58, MJE5, MJE
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***enic
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400V 80W 8A 5@5A5V 5V@8A3A PNP -65¡Í~+150¡Í@(Tj) TO-220(TO-220-3) Bipolar Transistors - BJT ROHS
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TRANSISTOR, PNP, TO-220AB; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 400V; Transition Frequency ft: -; Power Dissipation Pd: 80W; DC Collector Current: 8A; DC Current Gain hFE: 15hFE; Transistor Case Style:
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RF TRANSISTOR, PNP, -400V, TO-220; Transistor Polarity:PNP; Collector Emitter Voltage Max:400V; Continuous Collector Current:8A; Power Dissipation:80W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:- RoHS Compliant: Yes
***th Star Micro
The MJE5850 MJE5851 and the MJE5852 transistors are designed for high-volt age high-speed power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications such as:
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***th Star Micro
The MJE5850 MJE5851 and the MJE5852 transistors are designed for high-volt age high-speed power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications such as:
Parte # Mfg. Descripción Valores Precio
MJE5851G
DISTI # V99:2348_07278929		ON SemiconductorTrans GP BJT PNP 350V 8A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		390
  • 5000:$1.2130
  • 2500:$1.2200
  • 1000:$1.2580
  • 500:$1.3110
  • 100:$1.5049
  • 10:$1.9280
  • 1:$2.0630
MJE5851G
DISTI # MJE5851GOS-ND		ON SemiconductorTRANS PNP 350V 8A TO220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		350In Stock
  • 1000:$1.4992
  • 500:$1.8094
  • 100:$2.2023
  • 50:$2.5848
  • 1:$3.0500
MJE5851G
DISTI # 26621158		ON SemiconductorTrans GP BJT PNP 350V 8A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		4000
  • 400:$1.2496
MJE5851G
DISTI # 27149027		ON SemiconductorTrans GP BJT PNP 350V 8A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		390
  • 100:$1.5200
  • 10:$1.9250
  • 5:$2.0200
MJE5851G
DISTI # MJE5851G		ON SemiconductorTrans GP BJT PNP 350V 8A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: MJE5851G)
RoHS: Compliant
Min Qty: 1
Container: Tube		Americas - 1072
  • 1:$1.7900
  • 10:$1.6900
  • 25:$1.6900
  • 50:$1.6900
  • 100:$1.2900
  • 500:$1.2900
  • 1000:$1.2900
MJE5851G
DISTI # 42K1299		ON SemiconductorBIPOLAR TRANSISTOR, PNP, -350V, TO-220,Transistor Polarity:PNP,Collector Emitter Voltage V(br)ceo:350V,Transition Frequency ft:-,Power Dissipation Pd:80W,DC Collector Current:-8A,DC Current Gain hFE:15hFE,No. of Pins:3Pins RoHS Compliant: Yes0
  • 1:$3.1600
  • 10:$2.5700
  • 25:$2.0800
  • 100:$2.0200
  • 250:$1.8400
  • 500:$1.5300
  • 1000:$1.4300
  • 2500:$1.3800
MJE5851G
DISTI # 863-MJE5851G		ON SemiconductorBipolar Transistors - BJT 8A 350V 80W PNP
RoHS: Compliant		402
  • 1:$2.9000
  • 10:$2.4700
  • 100:$1.9700
  • 500:$1.7300
  • 1000:$1.4300
MJE5852G
DISTI # 863-MJE5852G		ON SemiconductorBipolar Transistors - BJT 8A 400V 80W PNP
RoHS: Compliant		380
  • 1:$2.7200
  • 10:$2.3100
  • 100:$1.8500
  • 500:$1.6200
  • 1000:$1.3400
MJE5851
DISTI # 863-MJE5851		ON SemiconductorBipolar Transistors - BJT 8A 350V 80W PNP
RoHS: Not compliant		0
    MJE5851GON Semiconductor 
    RoHS: Not Compliant    		14
    • 1000:$1.4300
    • 500:$1.5100
    • 100:$1.5700
    • 25:$1.6400
    • 1:$1.7700
    MJE5851G
    DISTI # C1S541900354298    		ON SemiconductorTrans GP BJT PNP 350V 8A 3-Pin(3+Tab) TO-220AB Tube
    RoHS: Compliant    		390
    • 100:$1.5200
    • 10:$1.9250
    • 1:$2.0200
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    Disponibilidad
    Valores:
    615
    En orden:
    2598
    Ingrese la cantidad:
    El precio actual de MJE5851G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    2,90 US$
    2,90 US$
    10
    2,47 US$
    24,70 US$
    100
    1,97 US$
    197,00 US$
    500
    1,73 US$
    865,00 US$
    1000
    1,43 US$
    1 430,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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