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MRF1K50N-TF4

MRF1K50N-TF4
Mfr. #:
MRF1K50N-TF4
Fabricante:
NXP / Freescale
Descripción:
RF MOSFET Transistors MRF1K50N 230 MHz Reference Circuit
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
MRF1K50N-TF4 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
MRF1K50N-TF4 más información
Atributo del producto
Valor de atributo
Fabricante:
NXP
Categoria de producto:
Transistores RF MOSFET
RoHS:
Y
Polaridad del transistor:
Canal N dual
Tecnología:
Si
Id - Corriente de drenaje continua:
100 mA
Vds - Voltaje de ruptura de drenaje-fuente:
133 V
Ganar:
23 dB
Potencia de salida:
1.5 kW
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 105 C
Estilo de montaje:
SMD / SMT
Paquete / Caja:
OM-1230-4
Frecuencia de operación:
1.8 MHz to 500 MHz
Escribe:
RF Power MOSFET
Marca:
NXP / Freescale
Transconductancia directa - Mín .:
33.5 S
Número de canales:
2 Channel
Tipo de producto:
Transistores RF MOSFET
Cantidad de paquete de fábrica:
1
Subcategoría:
MOSFET
Vgs - Voltaje puerta-fuente:
- 6 V, 10 V
Vgs th - Voltaje umbral puerta-fuente:
1.7 V
Parte # Alias:
935345445598
Unidad de peso:
2.205 lbs
Tags
MRF1K50N, MRF1K, MRF1, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
MRF1K50N 1500W RF Power Transistor
NXP MRF1K50N and MRF1K50GNR5 1500W RF Power Transistors combine high RF output power, superior ruggedness, and thermal performance. These LDMOS devices feature an over-molded plastic package, offering up to 30% lower thermal resistance compared with the ceramic MRF1K50H. NXP's plastic packaging technology helps extract more performance from RF transistors, while simplifying amplifier manufacturability thanks to tighter dimensional tolerances and better solder connections.NXP MRF1K50N and MRF1K50GNR5 RF Power Transistors are designed to deliver 1.50kW CW at 50V and reduce the number of transistors in high-power RF amplifiers. The input and output design of these devices allow for wide frequency range use from 1.8 to 500 MHz.Learn More
Parte # Mfg. Descripción Valores Precio
MRF1K50N-TF4
DISTI # MRF1K50N-TF4-ND		NXP SemiconductorsMRF1K50N-TF4
RoHS: Compliant
Min Qty: 1
Container: Bulk		Temporarily Out of Stock
  • 1:$997.5000
MRF1K50N-TF4
DISTI # MRF1K50N-TF4		Avnet, Inc.MRF1K50N-TF4 - Boxed Product (Development Kits) (Alt: MRF1K50N-TF4)
RoHS: Not Compliant
Min Qty: 1
Container: Box		Americas - 0
    MRF1K50N-TF4
    DISTI # 841-MRF1K50N-TF4    		NXP SemiconductorsRF MOSFET Transistors MRF1K50N 230 MHz Reference Circuit
    RoHS: Compliant    		2
    • 1:$1,308.0500
    • 5:$1,294.0000
    Imagen Parte # Descripción
    MRF1K50GNR5

    Mfr.#: MRF1K50GNR5

    OMO.#: OMO-MRF1K50GNR5

    		 RF MOSFET Transistors Wideband RF Power LDMOS Transistors, 1.8-500 MHz, 1500 W CW, 50 V
    MRF1K50H-TF1

    Mfr.#: MRF1K50H-TF1

    OMO.#: OMO-MRF1K50H-TF1

    		 RF MOSFET Transistors MRF1K50H 87.5-108 MHz Reference Circuit
    MRF1K50HR5

    Mfr.#: MRF1K50HR5

    OMO.#: OMO-MRF1K50HR5

    		 RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1500 W CW, 1.8-500 MHz, 50 V
    MRF1K50H-TF5

    Mfr.#: MRF1K50H-TF5

    OMO.#: OMO-MRF1K50H-TF5

    		 RF MOSFET Transistors MRF1K50H 13.56 MHz Reference Circuit
    MRF1K50H-TF3

    Mfr.#: MRF1K50H-TF3

    OMO.#: OMO-MRF1K50H-TF3-NXP-SEMICONDUCTORS

    		 MRF1K50H 81.36 MHZ EVAL BOARD
    MRF1K50N-TF4

    Mfr.#: MRF1K50N-TF4

    OMO.#: OMO-MRF1K50N-TF4-NXP-SEMICONDUCTORS

    		 MRF1K50N-TF4
    MRF1K50N-TF1

    Mfr.#: MRF1K50N-TF1

    OMO.#: OMO-MRF1K50N-TF1-NXP-SEMICONDUCTORS

    		 MRF1K50N-TF1
    MRF1K50GNR5

    Mfr.#: MRF1K50GNR5

    OMO.#: OMO-MRF1K50GNR5-NXP-SEMICONDUCTORS

    		 WIDEBAND RF POWER LDMOS TRANSIST
    MRF1K50H-TF5

    Mfr.#: MRF1K50H-TF5

    OMO.#: OMO-MRF1K50H-TF5-NXP-SEMICONDUCTORS

    		 Trans RF Power LDMOS 50V 1.5KW 500MHz 23.7dB Gain NI-1230H-4S - Boxed Product (Development Kits) (Alt: MRF1K50H-TF5)
    MRF1K50NR5

    Mfr.#: MRF1K50NR5

    OMO.#: OMO-MRF1K50NR5-NXP-SEMICONDUCTORS

    		 WIDEBAND RF POWER LDMOS TRANSIST
    Disponibilidad
    Valores:
    Available
    En orden:
    1985
    Ingrese la cantidad:
    El precio actual de MRF1K50N-TF4 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    981,03 US$
    981,03 US$
    5
    970,49 US$
    4 852,45 US$
    10
    960,06 US$
    9 600,60 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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