SI4842BDY-T1-GE3

SI4842BDY-T1-GE3
Mfr. #:
SI4842BDY-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 30V 28A 6.25W 4.2mohm @ 10V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI4842BDY-T1-GE3 Ficha de datos
Entrega:
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Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4842BDY-T1-GE3 DatasheetSI4842BDY-T1-GE3 Datasheet (P4-P6)SI4842BDY-T1-GE3 Datasheet (P7-P9)
ECAD Model:
Más información:
SI4842BDY-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SO-8
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Serie:
SI4
Marca:
Vishay / Siliconix
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Parte # Alias:
SI4842BDY-GE3
Unidad de peso:
0.006596 oz
Tags
SI4842BDY-T, SI4842BD, SI4842B, SI4842, SI484, SI48, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 30V 28A 8-Pin SOIC N T/R
***ark
N-Channel 30-V (D-S) Mosfet
***i-Key
MOSFET N-CH 30V 28A 8SO
***ment14 APAC
N CHANNEL MOSFET, 30V, 28A, SOIC; Transi; N CHANNEL MOSFET, 30V, 28A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:30V; On Resistance Rds(on):5.7mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:20V
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Parte # Mfg. Descripción Valores Precio
SI4842BDY-T1-GE3
DISTI # V72:2272_09215592
Vishay IntertechnologiesTrans MOSFET N-CH 30V 28A 8-Pin SOIC N T/R
RoHS: Compliant
2500
  • 1000:$0.8574
  • 500:$0.8980
  • 250:$0.9978
  • 100:$1.1087
  • 25:$1.2744
  • 10:$1.5968
  • 1:$1.8615
SI4842BDY-T1-GE3
DISTI # SI4842BDY-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 30V 28A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2975In Stock
  • 1000:$1.0696
  • 500:$1.2910
  • 100:$1.6598
  • 10:$2.0660
  • 1:$2.2900
SI4842BDY-T1-GE3
DISTI # SI4842BDY-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 30V 28A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2975In Stock
  • 1000:$1.0696
  • 500:$1.2910
  • 100:$1.6598
  • 10:$2.0660
  • 1:$2.2900
SI4842BDY-T1-GE3
DISTI # SI4842BDY-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 30V 28A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
2500In Stock
  • 2500:$0.9669
SI4842BDY-T1-GE3
DISTI # 27472022
Vishay IntertechnologiesTrans MOSFET N-CH 30V 28A 8-Pin SOIC N T/R
RoHS: Compliant
2500
  • 1000:$0.8574
  • 500:$0.8980
  • 250:$0.9978
  • 100:$1.1087
  • 25:$1.2744
  • 10:$1.5968
  • 7:$1.8615
SI4842BDY-T1-GE3
DISTI # SI4842BDY-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 28A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4842BDY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Reel
Americas - 5000
  • 2500:$0.9289
  • 5000:$0.9019
  • 10000:$0.8649
  • 15000:$0.8409
  • 25000:$0.8189
SI4842BDY-T1-GE3
DISTI # SI4842BDY-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 28A 8-Pin SOIC N T/R (Alt: SI4842BDY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Asia - 0
  • 2500:$0.8895
  • 5000:$0.6843
  • 7500:$0.5446
  • 12500:$0.4601
  • 25000:$0.4236
  • 62500:$0.4106
  • 125000:$0.3983
SI4842BDY-T1-GE3
DISTI # 16P3760
Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 28A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:28A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0057ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:20V,Product Range:-RoHS Compliant: Yes0
  • 1:$2.2800
  • 10:$1.8900
  • 25:$1.7500
  • 50:$1.6100
  • 100:$1.4700
  • 250:$1.3800
  • 500:$1.2800
SI4842BDY-T1-GE3.
DISTI # 81AC9920
Vishay IntertechnologiesN-CHANNEL 30-V (D-S) MOSFET ROHS COMPLIANT: YES5000
  • 1:$0.9760
  • 5000:$0.9470
  • 10000:$0.9090
  • 15000:$0.8830
  • 25000:$0.8600
SI4842BDY-T1-GE3
DISTI # 781-SI4842BDY-T1-GE3
Vishay IntertechnologiesMOSFET 30V 28A 6.25W 4.2mohm @ 10V
RoHS: Compliant
4778
  • 1:$2.2800
  • 10:$1.8900
  • 100:$1.4700
  • 500:$1.2800
  • 1000:$1.0700
  • 2500:$0.9880
SI4842BDY-T1-GE3
DISTI # C1S803603824943
Vishay IntertechnologiesTrans MOSFET N-CH 30V 28A 8-Pin SOIC N T/R
RoHS: Compliant
2500
  • 250:$0.9978
  • 100:$1.1087
  • 25:$1.2744
  • 10:$1.5968
Imagen Parte # Descripción
24LC16BT-I/SN

Mfr.#: 24LC16BT-I/SN

OMO.#: OMO-24LC16BT-I-SN

EEPROM 2kx8 - 2.5V
24LC256-I/SN

Mfr.#: 24LC256-I/SN

OMO.#: OMO-24LC256-I-SN

EEPROM 32kx8 - 2.5V
TJA1050T/CM,118

Mfr.#: TJA1050T/CM,118

OMO.#: OMO-TJA1050T-CM-118

CAN Interface IC TJA1050T/SO8//CM/REEL 13 Q1 NDP
BSS123

Mfr.#: BSS123

OMO.#: OMO-BSS123

MOSFET SOT-23 N-CH LOGIC
SI4842BDY-T1-E3

Mfr.#: SI4842BDY-T1-E3

OMO.#: OMO-SI4842BDY-T1-E3

MOSFET 30V 23A 3.5W
BTS721L1

Mfr.#: BTS721L1

OMO.#: OMO-BTS721L1

Power Switch ICs - Power Distribution SMART 4-CH HI-SIDE PWR SWITCH
MSP430F2131TDWR

Mfr.#: MSP430F2131TDWR

OMO.#: OMO-MSP430F2131TDWR

16-bit Microcontrollers - MCU Mixed Signal MCP
MSP430F2131IPWR

Mfr.#: MSP430F2131IPWR

OMO.#: OMO-MSP430F2131IPWR

16-bit Microcontrollers - MCU 16-Bit Ult-Lo-Pwr 8kB Flash 256B RAM
EGPA350ELL681MK20S

Mfr.#: EGPA350ELL681MK20S

OMO.#: OMO-EGPA350ELL681MK20S

Aluminum Electrolytic Capacitors - Radial Leaded 35Volts 680uF
SI4842BDY-T1-E3

Mfr.#: SI4842BDY-T1-E3

OMO.#: OMO-SI4842BDY-T1-E3-VISHAY

MOSFET N-CH 30V 28A 8-SOIC
Disponibilidad
Valores:
Available
En orden:
1987
Ingrese la cantidad:
El precio actual de SI4842BDY-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
2,48 US$
2,48 US$
10
2,06 US$
20,60 US$
100
1,60 US$
160,00 US$
500
1,40 US$
700,00 US$
1000
1,15 US$
1 150,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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