NDC651N

NDC651N
Mfr. #:
NDC651N
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET N-Ch LL FET Enhancement Mode
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
NDC651N Ficha de datos
Entrega:
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Pago:
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HTML Datasheet:
NDC651N DatasheetNDC651N Datasheet (P4-P6)NDC651N Datasheet (P7)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SSOT-6
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
3.2 A
Rds On - Resistencia de la fuente de drenaje:
38 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
1.6 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Carrete
Altura:
1.1 mm
Longitud:
2.9 mm
Producto:
Pequeña señal MOSFET
Tipo de transistor:
1 N-Channel
Escribe:
MOSFET
Ancho:
1.6 mm
Marca:
ON Semiconductor / Fairchild
Otoño:
19 ns
Tipo de producto:
MOSFET
Hora de levantarse:
19 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
15 ns
Tiempo típico de retardo de encendido:
9 ns
Parte # Alias:
NDC651N_NL
Unidad de peso:
0.000557 oz
Tags
NDC651, NDC65, NDC6, NDC
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 30V 3.2A 6-Pin SuperSOT T/R
***i-Key
MOSFET N-CH 30V 3.2A SSOT6
***ser
MOSFETs N-Ch LL FET Enhancement Mode
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:3.2A; On Resistance, Rds(on):0.06ohm; Drain-Source Breakdown Voltage:30V; Gate-Source Voltage:6V; Leaded Process Compatible:No RoHS Compliant: No
***inecomponents.com
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
Parte # Mfg. Descripción Valores Precio
NDC651N
DISTI # NDC651NTR-ND
ON SemiconductorMOSFET N-CH 30V 3.2A SSOT6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    NDC651N
    DISTI # NDC651NCT-ND
    ON SemiconductorMOSFET N-CH 30V 3.2A SSOT6
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      NDC651N
      DISTI # NDC651NDKR-ND
      ON SemiconductorMOSFET N-CH 30V 3.2A SSOT6
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        NDC651N
        DISTI # 512-NDC651N
        ON SemiconductorMOSFET N-Ch LL FET Enhancement Mode
        RoHS: Compliant
        0
          NDC651N_Q
          DISTI # 512-NDC651N_Q
          ON SemiconductorMOSFET N-Ch LL FET Enhancement Mode
          RoHS: Not compliant
          0
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              • 574:$1.0063
              • 267:$1.0465
              • 1:$3.2200
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                Disponibilidad
                Valores:
                Available
                En orden:
                1000
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