CIG22B4R7MNE

Mfr. #:: CIG22B4R7MNE
Fabricante:: Samsung Electro-Mechanics
Descripción:: Inductor Power Chip Shielded Multi-Layer 4.7uH 20% 1MHz Ferrite 1A 250mOhm DCR 1008 T/R
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: CIG22B4R7MNE Ficha de datos
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HTML Datasheet:: CIG22B4R7MNE Datasheet
ECAD Model:

Atributo del producto
Valor de atributo

Fabricante: Samsung Electro-Mechanics America, Inc.

categoria de producto: Inductores fijos

Serie: CIG22B

Escribe: Multicapa

embalaje: Digi-ReelR

Valoración actual: 1A

Paquete-Estuche: 1008 (2520 Metric)

Temperatura de funcionamiento: -40°C ~ 125°C

Tipo de montaje: Montaje superficial

Tamaño-dimensión: 0.098" L x 0.079" W (2.50mm x 2.00mm)

Tolerancia: ±20%

Altura-Sentado-Max: *

Calificaciones: -

Blindaje: Blindado

Inductancia: 4.7μH

DC-Resistencia-DCR: 250 mOhm

Material-Núcleo: -

Saturación de corriente: 650mA

Q-Freq: -

Frecuencia-autorresonante: -

Prueba de frecuencia: 1MHz

Tags: CIG22B4, CIG22B, CIG22, CIG2, CIG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CIG22B4R7MNE Descripción

***ical: Inductor Power Chip Shielded Multi-Layer 4.7uH 20% 1MHz Ferrite 1A 0.25Ohm DCR 1008 T/R

***i-Key: FIXED IND 4.7UH 1A 250 MOHM SMD

***el Electronic: IC TRANSCEIVER E1 QUAD 5V 256BGA

***DA Technology Co., Ltd.: Product Description Demo for Development.

***ical: Inductor Power Chip Shielded Multi-Layer 4.7uH 20% 1MHz Ferrite 1.1A 0.138Ohm DCR 1008 T/R

***nsix Microsemi: General Purpose Inductor, 4.7uH, 20%, 1 Element, Ferrite-Core, SMD, 1008

***et Europe: Power Inductor (SMD), 4.7 uH, ± 20%, 1.1 A, Unshielded, 1.1 A, 2.5mm x 2mm x 0.9mm

***ure Electronics: LQM Series 1008 4.7 uH ±20 % Tol. 1.1 A SMT High Frequency Multilayer Inductor

***nell: INDUCTOR, 4.7UH, 20%, 1.1A, 25MHZ, 1008; Inductance: 4.7µH; Product Range: LQM2HPN Series; DC Current Rating: -; High Frequency Inductor Case: 1008 [2520 Metric]; Inductor Construction: Multilayer; DC Resistance Max: 0.138ohm; Inductance Tolerance: ± 20%; Self Resonant Frequency Min: 25MHz; SVHC: No SVHC (15-Jan-2019)

***ical: Inductor Power Chip Wirewound 4.7uH 20% 2MHz Metal 1.3A 0.26Ohm DCR 1008 T/R

***et: Power Inductor (SMD), 4.7 uH, ± 20%, 1.3 A, Shielded, 1.5 A, 2.5mm x 2mm x 1.2mm

***ark: INDUCTOR, SHIELDED, 4.7UH, 1.5A, SMD, FULL REEL; Inductance:4.7µH; RMS Current (Irms):1.3A; Inductor Construction:Shielded; Saturation Current (Isat):1.5A; Product Range:MA Series; Inductor Case / Package:1008 [2520 Metric] RoHS Compliant: Yes

***et Europe: Ind Power Chip Shielded Wirewound 4.7uH 20% 100KHz Ferrite 1.1A 1008 T/R

***ark: FIXED IND 4.7UH 1.1A 206 MOHM - Tape & Reel (TR) RoHS Compliant: Yes

***et: Power Inductor (SMD), 4.7 uH, ± 20%, 1.12 A, Shielded, 1.1 A, 2.5mm x 2mm x 1.5mm

***ure Electronics: 4.7µH Shielded Wirewound Inductor 1.1A 206 mOhm Max

***ical: Inductor Power Chip Wirewound 4.7uH 20% 2MHz Metal 1.1A 0.3Ohm DCR 1008 T/R

***ark: INDUCTOR,METAL WIRE-W CHIP,1008 ,4.7UH20% ,T&R ROHS COMPLIANT: YES

***et: IND METAL CORE SHIELDED HGH CURRENT 4.7UH 20% 2.5X2.0 SMD

***i-Key: FIXED IND 4.7UH 1.1A 300MOHM SMD

***yo Yuden SCT: Metal Core Wire-wound Chip Power Inductors (MCOIL™, MA series), 1.1A, 4.7 uH, ± 20 %, 1008, RoHS

***DA Technology Co., Ltd.: Product Description Demo for Development.

***ical: Inductor Power Chip Shielded Wirewound 4.7uH 20% 1MHz Ferrite 0.7A 0.432Ohm DCR 1008 T/R

*** Stop Electro: General Purpose Inductor, 4.7uH, 20%, 1 Element, Ferrite-Core, SMD, 1008

***nell: INDUCTOR, POWER, 4.7UH, +/-20%; Product Range:MURATA - LQH Series Chip Inductors; Inductance:4.7µH; Inductance Tolerance:± 20%; DC Resistance Max:0.36ohm; DC Current Rating:0.7A; Self Resonant Frequency:60MHz; Inductor Case Style:1008 [2516 Metric]; SVHC:No SVHC (19-Dec-2012)

***ical: Inductor Power Shielded Wirewound 4.7uH 20% 100KHz Ferrite 1.04A 0.144Ohm DCR 1212 T/R

***ure Electronics: NR Series 4.7 uH ±20% 1.04 A 144 mOhm Shielded SMT Wirewound Power Inductor

*** Stop Electro: General Purpose Inductor, 4.7uH, 20%, 1 Element, Ferrite-Core, SMD, 1212

***et: Power Inductor (SMD), 4.7 uH, ± 20%, 1.04 A, Shielded, 1.02 A, 3mm x 3mm x 1.5mm

***ark: Inductor, Shielded, 4.7Uh, 1.02A, Smd, Full Reel; Product Range:nr Series; Inductance:4.7 H; Rms Current (Irms):1.04A; Saturation Current (Isat):1.02A; Inductor Construction:shielded; Dc Resistance Max:0.12Ohm; Packaging:tape & Reel Rohs Compliant: Yes

***ical: Inductor Power Chip Shielded Multi-Layer 4.7uH 20% 1MHz Ferrite 1.1A 0.175Ohm DCR 0806 T/R

***ure Electronics: LQM2 Series 0805 4.7 uH ±20% 1.1 A 175 mOhm Shielded Multilayer Chip Inductor

*** Stop Electro: General Purpose Inductor, 4.7uH, 20%, 1 Element, Ferrite-Core, SMD, 0806

***et: Power Inductor (SMD), 4.7 uH, ± 20%, 1.1 A, Unshielded, 2mm x 1.6mm x 0.9mm

***nell: POWER INDUCTOR, 4.7UH, 1.1A, 0806, SHLD; Inductance: 4.7µH; RMS Current (Irms): 1.1A; Inductor Construction: Shielded; Saturation Current (Isat): -; Product Range: LQM2M Series; Power Inductor Case: 2mm x 1.6mm x 0.9mm; DC Resistance Max: 0.175ohm; Inductance Tolerance: ± 20%; SVHC: No SVHC (15-Jan-2019)

***ical: Inductor Power Shielded Wirewound 4.7uH 20% 1MHz Metal 1A 0.3Ohm DCR 1008 Standard

***et: Power Inductor (SMD), 4.7 uH, ± 20%, 1 A, Shielded, 1.3 A, 2.5mm x 2mm x 1mm

***ure Electronics: 2.5 x 2 x 1 mm 4.7 uH ±20% 0.3 Ohm DCR SMT Metal Alloy Chip Inductor

***i-Key: FIXED IND 4.7UH 1.3A 300MOHM SMD

***nell: INDUCTOR, 4.7UH, SHIELDED, 1A;

***DA Technology Co., Ltd.: Product Description Demo for Development.

***ical: Inductor Power Chip Wirewound 4.7uH 20% 1MHz Metal 0.8A 0.38Ohm DCR 1008 T/R

***ure Electronics: Fixed Inductors 0805 4.7uH 380mOhms +/-20%Tol .8A HiCur

*** Stop Electro: General Purpose Inductor, 4.7uH, 20%, 1 Element, Metal Core-Core, SMD, 1008

***ical: Inductor Power Shielded Wirewound 4.7uH 20% 100KHz Ferrite 1.2A 0.108Ohm DCR 1515 T/R

***roFlash: General Purpose Inductor, 4.7uH, 20%, 1 Element, Ferrite-Core, SMD, 1616

***ure Electronics: NR Series 4.7 uH ±20% 1.2 A 108 mO Shielded Wirewound Power Inductor

***et: Power Inductor (SMD), 4.7 uH, ± 20%, 1.2 A, Shielded, 1.7 A, 4mm x 4mm x 1.8mm

***nell: INDUCTOR, SHIELDED, 4.7UH, 1.7A, SMD; In; INDUCTOR, SHIELDED, 4.7UH, 1.7A, SMD; Inductance: 4.7µH; RMS Current (Irms): 1.2A; Inductor Construction: Shielded; Saturation Current (Isat): 1.7A; Product Range: NR Series; Power Inductor Case: 4mm x 4mm x 1.8mm; Core Material: Ferrite

Market price

Parte #	Mfg.	Descripción	Valores	Precio
CIG22B4R7MNE DISTI # V72:2272_13905239	Samsung Electro-Mechanics	Inductor Power Chip Shielded Multi-Layer 4.7uH 20% 1MHz Ferrite 1A 250mOhm DCR 1008 T/R RoHS: Compliant	133672	75000:$0.0694 30000:$0.0727 15000:$0.0759 6000:$0.0792 3000:$0.0851 1000:$0.0911 500:$0.1202 250:$0.1421 100:$0.1435 25:$0.2325 10:$0.2348 1:$0.2612
CIG22B4R7MNE DISTI # 1276-6218-2-ND	Samsung Electro-Mechanics	FIXED IND 4.7UH 1A 250 MOHM SMD RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	72000In Stock	30000:$0.0850 15000:$0.0878 6000:$0.0906 3000:$0.0963
CIG22B4R7MNE DISTI # 1276-6218-1-ND	Samsung Electro-Mechanics	FIXED IND 4.7UH 1A 250 MOHM SMD RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2001In Stock	1000:$0.1020 500:$0.1331 100:$0.1558 10:$0.2270 1:$0.2500
CIG22B4R7MNE DISTI # 1276-6218-6-ND	Samsung Electro-Mechanics	FIXED IND 4.7UH 1A 250 MOHM SMD RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
CIG22B4R7MNE DISTI # 31335105	Samsung Electro-Mechanics	Inductor Power Chip Shielded Multi-Layer 4.7uH 20% 1MHz Ferrite 1A 250mOhm DCR 1008 T/R RoHS: Compliant	133672	128:$0.2612
CIG22B4R7MNE DISTI # CIG22B4R7MNE	Samsung Semiconductor	Ind Power Chip Shielded Multi-Layer 4.7uH 20% 1MHz Ferrite 1A 1008 Embossed T/R - Tape and Reel (Alt: CIG22B4R7MNE) RoHS: Compliant Min Qty: 150000 Container: Reel	Europe - 0	1500000:€0.0477 750000:€0.0498 450000:€0.0514 300000:€0.0539 150000:€0.0557

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Imagen	Parte #	Descripción
	Mfr.#: CIG22B1R0MNE OMO.#: OMO-CIG22B1R0MNE-SAMSUNG-ELECTRO-MECHANICS-AMER	FIXED IND 1UH 1.2A 125 MOHM SMD
	Mfr.#: CIG22B2R2MAE OMO.#: OMO-CIG22B2R2MAE-SAMSUNG-ELECTRO-MECHANICS-AMER	Nuevo y original
	Mfr.#: CIG22B2R2MLE OMO.#: OMO-CIG22B2R2MLE-SAMSUNG-ELECTRO-MECHANICS-AMER	FIXED IND 2.2UH 900MA 170 MOHM
	Mfr.#: CIG22B2R2MNE OMO.#: OMO-CIG22B2R2MNE-SAMSUNG-ELECTRO-MECHANICS-AMER	Inductor Power Chip Shielded Multi-Layer 2.2uH 20% 1MHz Ferrite 1.1A 180mOhm DCR 1008 T/R
	Mfr.#: CIG22B3R3MAE OMO.#: OMO-CIG22B3R3MAE-SAMSUNG-ELECTRO-MECHANICS-AMER	Nuevo y original
	Mfr.#: CIG22B3R3MNE OMO.#: OMO-CIG22B3R3MNE-SAMSUNG-ELECTRO-MECHANICS-AMER	Nuevo y original
	Mfr.#: CIG22B4R7MAE OMO.#: OMO-CIG22B4R7MAE-SAMSUNG-ELECTRO-MECHANICS-AMER	Nuevo y original
	Mfr.#: CIG22B4R7MLE OMO.#: OMO-CIG22B4R7MLE-1190	Nuevo y original
	Mfr.#: CIG22B4R7MNE OMO.#: OMO-CIG22B4R7MNE-SAMSUNG-ELECTRO-MECHANICS-AMER	Inductor Power Chip Shielded Multi-Layer 4.7uH 20% 1MHz Ferrite 1A 250mOhm DCR 1008 T/R
	Mfr.#: CIG22BR56MAE OMO.#: OMO-CIG22BR56MAE-SAMSUNG-ELECTRO-MECHANICS-AMER	Nuevo y original

Disponibilidad

Valores:: Available
En orden:: 4000
Ingrese la cantidad:

El precio actual de CIG22B4R7MNE es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~0,08 US$~~; ~~0,08 US$~~

10: ~~0,08 US$~~; ~~0,77 US$~~

100: ~~0,07 US$~~; ~~7,32 US$~~

500: ~~0,07 US$~~; ~~34,55 US$~~

1000: ~~0,07 US$~~; ~~65,10 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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CIG22B4R7MNE

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes