IPB081N06L3GATMA1

IPB081N06L3GATMA1
Mfr. #:
IPB081N06L3GATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-CH 60V 50A TO263-3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPB081N06L3GATMA1 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
XPB081N06
embalaje
Carrete
Alias ​​de parte
G IPB081N06L3 IPB081N06L3GXT SP000398076
Nombre comercial
OptiMOS
Paquete-Estuche
TO-263-3
Tecnología
Si
Número de canales
1 Channel
Tipo transistor
1 N-Channel
Polaridad del transistor
Canal N
Tags
IPB081N06L3G, IPB081, IPB08, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Japan
Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) D2PAK T/R
***ineon SCT
OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TO263-3, RoHS
***ment14 APAC
MOSFET, N CH, 50A, 60V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):6.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:79W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:79W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
Parte # Mfg. Descripción Valores Precio
IPB081N06L3GATMA1
DISTI # V72:2272_06384674
Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
990
  • 500:$0.8331
  • 250:$0.8476
  • 100:$0.9417
  • 25:$1.1252
  • 10:$1.2502
  • 1:$1.6010
IPB081N06L3GATMA1
DISTI # V36:1790_06384674
Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
0
  • 1000000:$0.5248
  • 500000:$0.5252
  • 100000:$0.5803
  • 10000:$0.6904
  • 1000:$0.7095
IPB081N06L3GATMA1
DISTI # IPB081N06L3GATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 60V 50A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1408In Stock
  • 500:$0.9257
  • 100:$1.1206
  • 10:$1.4370
  • 1:$1.6100
IPB081N06L3GATMA1
DISTI # IPB081N06L3GATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 60V 50A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1408In Stock
  • 500:$0.9257
  • 100:$1.1206
  • 10:$1.4370
  • 1:$1.6100
IPB081N06L3GATMA1
DISTI # IPB081N06L3GATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 60V 50A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
1000In Stock
  • 10000:$0.6055
  • 5000:$0.6291
  • 2000:$0.6622
  • 1000:$0.7095
IPB081N06L3GATMA1
DISTI # 31919767
Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
990
  • 12:$1.6010
IPB081N06L3GXT
DISTI # IPB081N06L3GATMA1
Infineon Technologies AGTrans MOSFET N-CH 60V 50A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB081N06L3GATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 10000:$0.5719
  • 6000:$0.5819
  • 4000:$0.6029
  • 2000:$0.6249
  • 1000:$0.6489
IPB081N06L3GATMA1
DISTI # 60R2670
Infineon Technologies AGMOSFET, N CHANNEL, 60V, 50A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:50A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0067ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V RoHS Compliant: Yes681
  • 500:$0.8650
  • 100:$0.9790
  • 10:$1.2700
  • 1:$1.4800
IPB081N06L3 G
DISTI # 726-IPB081N06L3G
Infineon Technologies AGMOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3
RoHS: Compliant
3004
  • 1:$1.4700
  • 10:$1.2600
  • 100:$0.9690
  • 500:$0.8560
  • 1000:$0.6760
  • 2000:$0.6000
  • 10000:$0.5770
IPB081N06L3GATMA1
DISTI # 726-IPB081N06L3GATMA
Infineon Technologies AGMOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3
RoHS: Compliant
2030
  • 1:$1.4700
  • 10:$1.2600
  • 100:$0.9690
  • 500:$0.8560
  • 1000:$0.6760
  • 2000:$0.6000
  • 10000:$0.5770
IPB081N06L3GATMA1
DISTI # 8269525P
Infineon Technologies AGMOSFET N-CH 50A 60V OPTIMOS3 TO263, RL975
  • 1000:£0.4720
  • 500:£0.5830
  • 250:£0.6220
  • 100:£0.6600
IPB081N06L3GATMA1
DISTI # 1775548
Infineon Technologies AGMOSFET, N CH, 50A, 60V, PG-TO263-3
RoHS: Compliant
681
  • 2000:$0.9040
  • 1000:$1.0200
  • 500:$1.2900
  • 100:$1.4600
  • 10:$1.9000
  • 1:$2.2200
IPB081N06L3GATMA1
DISTI # XSKDRABV0051843
Infineon Technologies AG 
RoHS: Compliant
2200 in Stock0 on Order
  • 2200:$0.7747
  • 1000:$0.8300
IPB081N06L3GATMA1
DISTI # 1775548
Infineon Technologies AGMOSFET, N CH, 50A, 60V, PG-TO263-31791
  • 500:£0.6670
  • 250:£0.7110
  • 100:£0.7540
  • 10:£1.0300
  • 1:£1.3100
Imagen Parte # Descripción
IPB081N06L3 G

Mfr.#: IPB081N06L3 G

OMO.#: OMO-IPB081N06L3-G

MOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3
IPB081N06L3GATMA1

Mfr.#: IPB081N06L3GATMA1

OMO.#: OMO-IPB081N06L3GATMA1

MOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3
IPB081N06L3

Mfr.#: IPB081N06L3

OMO.#: OMO-IPB081N06L3-1190

Nuevo y original
IPB081N06L3 G

Mfr.#: IPB081N06L3 G

OMO.#: OMO-IPB081N06L3-G-1190

MOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3
IPB081N06L3G

Mfr.#: IPB081N06L3G

OMO.#: OMO-IPB081N06L3G-1190

Trans MOSFET N-CH 60V 50A 3-Pin TO-263 T/R (Alt: SP000398076)
IPB081N06L3GATMA1

Mfr.#: IPB081N06L3GATMA1

OMO.#: OMO-IPB081N06L3GATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 60V 50A TO263-3
Disponibilidad
Valores:
Available
En orden:
4500
Ingrese la cantidad:
El precio actual de IPB081N06L3GATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,79 US$
0,79 US$
10
0,75 US$
7,48 US$
100
0,71 US$
70,85 US$
500
0,67 US$
334,55 US$
1000
0,63 US$
629,80 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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