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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| 2MBI600VXA-120E-50 DISTI # 54W0211 | Fuji Electric Co Ltd | IGBT, MODULE, DUAL N CHANNEL, 1.2KV, 800A,Transistor Polarity:Dual N Channel,DC Collector Current:800A,Collector Emitter Saturation Voltage Vce(on):1.85V,Power Dissipation Pd:3.35kW,Collector Emitter Voltage V(br)ceo:1.2kV RoHS Compliant: Yes | 0 | |
| 2MBI600VXA-120E-50-E DISTI # FE0000000000422 | Fuji Electric Co Ltd | Insulated Gate Bipolar Transistor,800AI(C),1200VV(BR)CES RoHS: Compliant | 0 in Stock0 on Order |
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| 2MBI600VXA-120E-50-M DISTI # FE0000000002029 | Fuji Electric Co Ltd | Insulated Gate Bipolar Transistor,800AI(C),1200VV(BR)CES RoHS: Compliant | 0 in Stock0 on Order |
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| Imagen | Parte # | Descripción |
|---|---|---|
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Mfr.#: 2MBI600VXA-120E-50 OMO.#: OMO-2MBI600VXA-120E-50-1190 |
IGBT, MODULE, DUAL N CHANNEL, 1.2KV, 800A, Transistor Polarity:Dual N Channel, DC Collector Current:800A, Collector Emitter Saturation Voltage Vce(on):1.85V, Power Dissipation Pd:3.35kW, Collecto |
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Mfr.#: 2MBI600VXA-120E-51 OMO.#: OMO-2MBI600VXA-120E-51-1190 |
IGBT HPM |