We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| IGW50N60H3FKSA1 DISTI # V36:1790_06376953 | Infineon Technologies AG | Trans IGBT Chip N-CH 600V 100A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant | 0 | |
| IGW50N60H3FKSA1 DISTI # IGW50N60H3FKSA1-ND | Infineon Technologies AG | IGBT 600V 100A 333W TO247-3 RoHS: Compliant Min Qty: 1 Container: Tube | 93In Stock |
|
| IGW50N60H3FKSA1 DISTI # IGW50N60H3FKSA1 | Infineon Technologies AG | Trans IGBT Chip N-CH 600V 100A 3-Pin TO-247 Tube - Bulk (Alt: IGW50N60H3FKSA1) RoHS: Compliant Min Qty: 147 Container: Bulk | Americas - 0 |
|
| IGW50N60H3FKSA1 DISTI # IGW50N60H3FKSA1 | Infineon Technologies AG | Trans IGBT Chip N-CH 600V 100A 3-Pin TO-247 Tube - Rail/Tube (Alt: IGW50N60H3FKSA1) RoHS: Compliant Min Qty: 240 Container: Tube | Americas - 0 |
|
| IGW50N60H3FKSA1 DISTI # 13T9423 | Infineon Technologies AG | IGBT,600V,50A,TO247,DC Collector Current:50A,Collector Emitter Saturation Voltage Vce(on):2.3V,Power Dissipation Pd:333W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:175°C,Product Range:-RoHS Compliant: Yes | 0 |
|
| IGW50N60H3 DISTI # 726-IGW50N60H3 | Infineon Technologies AG | IGBT Transistors 600V 50A 333W RoHS: Compliant | 1123 |
|
| IGW50N60H3FKSA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247 RoHS: Compliant | 360 |
|
| IGW50N60H3FKSA1 DISTI # 7528331P | Infineon Technologies AG | TRANSISTOR IGBT N-CH 600V 100A TO247, TU | 122 |
|
| IGW50N60H3FKSA1 DISTI # 7528331 | Infineon Technologies AG | TRANSISTOR IGBT N-CH 600V 100A TO247, EA | 29 |
|
| IGW50N60H3FKSA1 DISTI # 1832337 | Infineon Technologies AG | IGBT,600V,50A,TO247 | 47 |
|
| IGW50N60H3FKSA1 DISTI # 1832337 | Infineon Technologies AG | IGBT,600V,50A,TO247 RoHS: Compliant | 37 |
|
| Imagen | Parte # | Descripción |
|---|---|---|
|
Mfr.#: IGW50N60TPXKSA1 OMO.#: OMO-IGW50N60TPXKSA1 |
IGBT Transistors The new 600V TRENCHSTOP Performance has been developed based on 600V TRENCHSTOP IGBT technology. The new IGBT series combines the best trade-off between conduction and switch-off ener |
|
Mfr.#: IGW50N65F5FKSA1 OMO.#: OMO-IGW50N65F5FKSA1 |
IGBT Transistors IGBT PRODUCTS |
|
|
Mfr.#: IGW50N65H5 OMO.#: OMO-IGW50N65H5 |
IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT |
|
|
Mfr.#: IGW50N65F5 OMO.#: OMO-IGW50N65F5 |
IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT |
|
|
Mfr.#: IGW50N60T OMO.#: OMO-IGW50N60T |
IGBT Transistors LOW LOSS IGBT TECH 600V 50A |
|
Mfr.#: IGW50N60H3FKSA1 OMO.#: OMO-IGW50N60H3FKSA1 |
IGBT Transistors IGBT PRODUCTS |
|
|
Mfr.#: IGW50N60T,G50T60, OMO.#: OMO-IGW50N60T-G50T60--1190 |
Nuevo y original |
|
|
Mfr.#: IGW50N65F5A OMO.#: OMO-IGW50N65F5A-1190 |
Nuevo y original |
|
Mfr.#: IGW50N65F5AXKSA1 |
IGBT 650V TO247-3 |
|
|
Mfr.#: IGW50N65H5 OMO.#: OMO-IGW50N65H5-1190 |
Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 - Bulk (Alt: IGW50N65H5) |