SI4104DY-T1-GE3

SI4104DY-T1-GE3
Mfr. #:
SI4104DY-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET RECOMMENDED ALT 781-SI4100DY-GE3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI4104DY-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4104DY-T1-GE3 DatasheetSI4104DY-T1-GE3 Datasheet (P4-P6)SI4104DY-T1-GE3 Datasheet (P7)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
E
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SO-8
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Altura:
1.75 mm
Longitud:
4.9 mm
Serie:
SI4
Ancho:
3.9 mm
Marca:
Vishay / Siliconix
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Parte # Alias:
SI4104DY-GE3
Unidad de peso:
0.006596 oz
Tags
SI4104, Si410, SI41, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 100V 3.2A 8-Pin SOIC N T/R
*** Source Electronics
MOSFET N-CH 100V 4.6A 8-SOIC
***ied Electronics & Automation
TRANSITOR, SI4559EY
***ment14 APAC
MOSFET, N-CH, 100V, 4.6A, SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:4.6A; Drain Source Voltage Vds:100V; On Resistance Rds(on):85mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:4.6A; Power Dissipation Pd:5W; Voltage Vgs Max:20V
Parte # Mfg. Descripción Valores Precio
SI4104DY-T1-GE3
DISTI # SI4104DY-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 100V 4.6A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Limited Supply - Call
    SI4104DY-T1-GE3
    DISTI # SI4104DY-T1-GE3CT-ND
    Vishay SiliconixMOSFET N-CH 100V 4.6A 8-SOIC
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      SI4104DY-T1-GE3
      DISTI # SI4104DY-T1-GE3DKR-ND
      Vishay SiliconixMOSFET N-CH 100V 4.6A 8-SOIC
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        SI4104DY-T1-GE3
        DISTI # 781-SI4104DY-GE3
        Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI4100DY-GE3
        RoHS: Compliant
        0
          Imagen Parte # Descripción
          SI4104DY-T1-GE3

          Mfr.#: SI4104DY-T1-GE3

          OMO.#: OMO-SI4104DY-T1-GE3

          MOSFET RECOMMENDED ALT 781-SI4100DY-GE3
          SI4104DY-T1-E3

          Mfr.#: SI4104DY-T1-E3

          OMO.#: OMO-SI4104DY-T1-E3

          MOSFET RECOMMENDED ALT 781-SI4100DY-GE3
          SI4104DY-T1-E3

          Mfr.#: SI4104DY-T1-E3

          OMO.#: OMO-SI4104DY-T1-E3-VISHAY

          RF Bipolar Transistors MOSFET 100V 4.6A 5.0W 105mohm @ 10V
          SI4104DY-T1-GE3

          Mfr.#: SI4104DY-T1-GE3

          OMO.#: OMO-SI4104DY-T1-GE3-VISHAY

          MOSFET N-CH 100V 4.6A 8-SOIC
          Disponibilidad
          Valores:
          Available
          En orden:
          1000
          Ingrese la cantidad:
          El precio actual de SI4104DY-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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