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STGW60H65DFB

STGW60H65DFB
Mfr. #:
STGW60H65DFB
Fabricante:
STMicroelectronics
Descripción:
IGBT Transistors 600V 60A trench gate field-stop IGBT
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STGW60H65DFB Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
STGW60H65DFB más información STGW60H65DFB Product Details
Atributo del producto
Valor de atributo
Fabricante:
STMicroelectronics
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-247-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
650 V
Voltaje de saturación colector-emisor:
1.6 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
80 A
Pd - Disipación de energía:
375 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Serie:
STGW60H65DFB
Embalaje:
Tubo
Corriente continua de colector Ic Max:
60 A
Marca:
STMicroelectronics
Corriente de fuga puerta-emisor:
250 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
600
Subcategoría:
IGBT
Unidad de peso:
1.340411 oz
Tags
STGW60H65DF, STGW60H65D, STGW60H65, STGW60H, STGW6, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 30, STMicroelectronics STGW60H65DFB IGBT, 80 A 650 V, 3-Pin TO-247
***ical
Trans IGBT Chip N-CH 650V 80A 375000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
STGW Series Advanced Trench Gate Field Stop Through Hole IGBT - TO-247-3
***p One Stop Global
Trans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-247 Tube
***et Europe
Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube
***ied Electronics & Automation
IGBT N-Ch 650V 60A High-Speed TO247
***ronik
IGBT 650V 80A 1,75V TO247-3
***i-Key
IGBT 650V 80A 375W TO-247
***ark
Igbt, Single, 650V, 80A, To-247-3; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.6V; Power Dissipation Pd:375W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, SINGLE, 650V, 80A, TO-247-3; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:375W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:HB Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (17-Dec-2015)
***nell
IGBT, SINGOLO, 650V, 80A, TO-247-3; Corrente di Collettore CC:80A; Tensione Saturaz Collettore-Emettitore Vce(on):1.6V; Dissipazione di Potenza Pd:375W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:HB Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (17-Dec-2015)
IGBT HB/HB2 Series
STMicroelectronics IGBT HB/HB2 Series IGBTs combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary trench gate field-stop (TGFS) structure.
Parte # Mfg. Descripción Valores Precio
STGW60H65DFB
DISTI # 497-14367-ND		STMicroelectronicsIGBT 650V 80A 375W TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 1020:$2.7783
  • 510:$3.2943
  • 120:$3.8697
  • 30:$4.4650
  • 1:$5.2600
STGW60H65DFB-4
DISTI # STGW60H65DFB-4-ND		STMicroelectronicsIGBT
RoHS: Not compliant
Min Qty: 600
Container: Tube		Temporarily Out of Stock
  • 600:$5.6963
STGW60H65DFB
DISTI # STGW60H65DFB		STMicroelectronicsTrans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube (Alt: STGW60H65DFB)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1:€3.0400
  • 10:€2.8000
  • 100:€2.6800
  • 250:€2.5700
  • 500:€2.4600
  • 1000:€2.0600
STGW60H65DFB
DISTI # STGW60H65DFB		STMicroelectronicsTrans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGW60H65DFB)
RoHS: Compliant
Min Qty: 600
Container: Tube		Americas - 0
  • 600:$2.7900
  • 1200:$2.6900
  • 2400:$2.4900
  • 3600:$2.3900
  • 6000:$2.3900
STGW60H65DFB-4
DISTI # STGW60H65DFB-4		STMicroelectronicsPTD HIGH VOLTAGE - Trays (Alt: STGW60H65DFB-4)
RoHS: Compliant
Min Qty: 600
Container: Tray		Americas - 0
  • 600:$5.1900
  • 1200:$4.9900
  • 2400:$4.6900
  • 3600:$4.4900
  • 6000:$4.3900
STGW60H65DFB
DISTI # 511-STGW60H65DFB		STMicroelectronicsIGBT Transistors 600V 60A trench gate field-stop IGBT
RoHS: Compliant		0
  • 1:$5.0000
  • 10:$4.2500
  • 100:$3.6800
  • 250:$3.4900
  • 500:$3.1300
  • 1000:$2.6400
  • 2500:$2.5100
STGW60H65DFB-4
DISTI # 511-STGW60H65DFB-4		STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 60 A high speed0
  • 1:$8.3300
  • 10:$7.5300
  • 25:$7.1800
  • 100:$6.2300
  • 250:$5.9600
  • 500:$5.4300
  • 1000:$4.7300
STGW60H65DFB
DISTI # 2629740		STMicroelectronicsIGBT, SINGLE, 650V, 80A, TO-247-3
RoHS: Compliant		0
  • 500:£2.0500
  • 250:£2.2000
  • 100:£2.3800
  • 10:£2.6500
  • 1:£3.2000
STGW60H65DFB-4
DISTI # 2778105		STMicroelectronicsIGBT, SINGLE, 650V, 80A, TO-247
RoHS: Compliant		100
  • 100:£3.5600
  • 50:£3.5700
  • 10:£3.5800
  • 5:£3.6300
  • 1:£3.7000
STGW60H65DFB-4
DISTI # 2778105		STMicroelectronicsIGBT, SINGLE, 650V, 80A, TO-247
RoHS: Compliant		100
  • 250:$8.0900
  • 100:$8.6800
  • 50:$9.7400
  • 10:$10.8500
  • 5:$12.2400
  • 1:$14.0400
STGW60H65DFB-4
DISTI # XSFP00000113820		STMicroelectronicsPower Field-Effect Transistor, 11A I(D),500V,0.38ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET, TO-263AB
RoHS: Compliant		80 in Stock0 on Order
  • 80:$11.0000
  • 17:$12.1000
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Disponibilidad
Valores:
380
En orden:
2363
Ingrese la cantidad:
El precio actual de STGW60H65DFB es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
5,00 US$
5,00 US$
10
4,25 US$
42,50 US$
100
3,68 US$
368,00 US$
250
3,49 US$
872,50 US$
500
3,13 US$
1 565,00 US$
1000
2,64 US$
2 640,00 US$
2500
2,51 US$
6 275,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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