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NGTB15N120IHLWG

NGTB15N120IHLWG
Mfr. #:
NGTB15N120IHLWG
Fabricante:
ON Semiconductor
Descripción:
IGBT Transistors 1200V/15A IGBT LPT TO-247
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
NGTB15N120IHLWG Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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HTML Datasheet:
NGTB15N120IHLWG DatasheetNGTB15N120IHLWG Datasheet (P4-P6)NGTB15N120IHLWG Datasheet (P7-P9)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
EN Semiconductor
categoria de producto
IGBTs - Single
Serie
NGTB15N120IHL
embalaje
Tubo
Unidad de peso
0.229281 oz
Estilo de montaje
A través del orificio
Paquete-Estuche
TO-247-3
Tipo de entrada
Estándar
Tipo de montaje
A través del orificio
Paquete de dispositivo de proveedor
TO-247
Potencia máxima
156W
Tiempo de recuperación inverso trr
-
Colector-corriente-Ic-Max
30A
Voltaje-Colector-Emisor-Ruptura-Máx.
1200V
Tipo IGBT
-
Colector de corriente pulsado Icm
120A
Vce-en-Max-Vge-Ic
2.2V @ 15V, 15A
Energía de conmutación
560μJ (off)
Gate-Charge
160nC
Td-encendido-apagado-25 ° C
-/165ns
Condición de prueba
600V, 15A, 15 Ohm, 15V
Disipación de potencia Pd
250 W
Colector-Emisor-Voltaje-VCEO-Max
1200 V
Corriente-de-colector-continuo-a-25-C
30 A
Voltaje máximo del emisor de puerta
20 V
Tags
NGTB15N120IHL, NGTB15N120I, NGTB15N12, NGTB15N1, NGTB15, NGTB1, NGTB, NGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Igbt Single Transistor, 30 A, 1.8 V, 156 W, 1.2 Kv, To-247, 3 Rohs Compliant: Yes
***Yang
Trans IGBT Chip N-CH 1200V 30A 250mW 3-Pin(3+Tab) TO-247 Tube
***emi
IGBT 1200V 15A FS1 Induction Heating
***r Electronics
Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247
***nell
IGBT, 1200V, 30A, TO247; DC Collector Current: 30A; Collector Emitter Saturation Voltage Vce(on): 1.8V; Power Dissipation Pd: 156W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Transistor Type: IGBT
***p One Stop
Trans IGBT Chip N-CH 1200V 30A 110000mW 3-Pin(3+Tab) TO-247 Tube
***el Electronic
GRM Series 0402 3.5 pF 50 V ±0.25 pF C0G/NP0 SMT Multilayer Ceramic Capacitor
***ment14 APAC
IGBT, N, 1200V, 15A, TO-247; Transistor Type:IGBT; DC Collector Current:30A; Collector Emitter Voltage Vces:2.2V; Power Dissipation Pd:110W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:15A; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:110W; Power Dissipation Pd:110W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
***ineon SCT
The 1200 V, 15 A hard-switching TRENCHSTOP™ IGBT3 co-packed with free-wheeling diode in a TO247 package, provides significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO247-3, RoHS
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of trenchstop-cell and fieldstop concept. The combination of IGBT with soft recovery Emitter Controled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled HE diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar inverters; Motor control; Major home appliances; Welding; Other hard switching applications
***ical
Trans IGBT Chip N=-CH 1200V 30A 110000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
TrenchStop Series 1200 V 30 A Through Hole IGBT Trench Field Stop - PG-TO247-3-1
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 9.3pF 25volts C0G +/-0.25pF
***ment14 APAC
IGBT,1200V,15A,TO247; Transistor Type:IGBT; DC Collector Current:15A; Collector Emitter Voltage Vces:2.2V; Power Dissipation Pd:110W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:110W
***ineon SCT
Infineon's 1200 V, 15 A single TRENCHSTOP™ IGBT3 in a TO247 package, provides significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO247-3, RoHS
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of trenchstop-cell and fieldstop concept. The combination of IGBT with soft recovery Emitter Controled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled HE diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar inverters; Motor control; Major home appliances; Welding; Other hard switching applications
***ical
Trans IGBT Chip N-CH 1200V 30A 333000mW 3-Pin(3+Tab) TO-247 Tube
*** Stop Electro
Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247AB
***emi
IGBT, 1200V, 15A, Field Stop Trench
***ark
RAIL/1200V 15A FS2 Trench IGBT
***el Electronic
IC REG LINEAR 24V 500MA TO252-3
***rchild Semiconductor
Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.
***et Europe
Trans IGBT Chip N-CH 1.2KV 30A 3-Pin TO-247 Tube
*** Stop Electro
Insulated Gate Bipolar Transistor, 60A I(C), 1200V V(BR)CES, N-Channel, TO-247AD
***ource
Reverse Conducting IGBT with monolithic body diode
*** Electronic Components
IGBT Transistors REVERSE CONDUCT IGBT 1200V 30A
***ment14 APAC
IGBT+ DIODE,1200V,30A,TO247; Transistor Type:IGBT; DC Collector Current:30A; Collector Emitter Voltage Vces:1.8V; Power Dissipation Pd:390W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:390W
***ical
Trans IGBT Chip N-CH 1200V 30A 294000mW 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel
***ark
1200V/15A Very Fast Igbt Fsii To-247 / Tube
***i-Key
IGBT TRENCH/FS 1200V 30A TO247-3
***i-Key Marketplace
INSULATED GATE BIPOLAR TRANSISTO
Parte # Mfg. Descripción Valores Precio
NGTB15N120IHLWG
DISTI # NGTB15N120IHLWGOS-ND		ON SemiconductorIGBT 1200V 30A 156W TO247-3
RoHS: Compliant
Min Qty: 240
Container: Tube		Limited Supply - Call
    NGTB15N120IHLWG
    DISTI # 05W5642    		ON SemiconductorIGBT Single Transistor, 30 A, 1.8 V, 156 W, 1.2 kV, TO-247, 3 , RoHS Compliant: Yes0
      NGTB15N120IHLWG
      DISTI # 70341210      		ON SemiconductorIGBT,1200V,15A,induction heating,TO247
      RoHS: Compliant      		0
      • 10:$2.0400
      • 50:$1.9400
      • 100:$1.8400
      • 250:$1.7500
      NGTB15N120IHLWG
      DISTI # 863-NGTB15N120IHLWG      		ON SemiconductorIGBT Transistors 1200V/15A IGBT LPT TO-2
      RoHS: Compliant      		0
        NGTB15N120IHLWG
        DISTI # 2114671        		ON SemiconductorIGBT, 1200V, 30A, TO247
        RoHS: Compliant        		0
        • 1:$3.9500
        • 10:$3.2700
        • 100:$2.7100
        • 500:$2.3700
        • 1000:$1.7200
        • 2500:$1.5800
        • 5000:$1.4400
        • 10000:$1.3900
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        NGTB15N120IHLWG 15N120IHL

        Mfr.#: NGTB15N120IHLWG 15N120IHL

        OMO.#: OMO-NGTB15N120IHLWG-15N120IHL-1190

        		 Nuevo y original
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        Mfr.#: NGTB15N120IHL

        OMO.#: OMO-NGTB15N120IHL-1190

        		 Nuevo y original
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        		 Nuevo y original
        Disponibilidad
        Valores:
        Available
        En orden:
        5000
        Ingrese la cantidad:
        El precio actual de NGTB15N120IHLWG es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        2,62 US$
        2,62 US$
        10
        2,49 US$
        24,94 US$
        100
        2,36 US$
        236,25 US$
        500
        2,23 US$
        1 115,65 US$
        1000
        2,10 US$
        2 100,00 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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