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BSC026N02KS

BSC026N02KS
Mfr. #:
BSC026N02KS
Fabricante:
Infineon Technologies
Descripción:
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSC026N02KS Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
FET - Single
Serie
OptiMOS
embalaje
Embalaje alternativo de Digi-ReelR
Alias ​​de parte
BSC026N02KSGAUMA1 BSC026N02KSGXT SP000379664
Estilo de montaje
SMD / SMT
Nombre comercial
OptiMOS
Paquete-Estuche
8-PowerTDFN
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
1 Channel
Paquete de dispositivo de proveedor
PG-TDSON-8
Configuración
Fuente triple de drenaje cuádruple simple
Tipo FET
Canal N MOSFET, óxido metálico
Potencia máxima
78W
Tipo transistor
1 N-Channel
Drenaje-a-fuente-voltaje-Vdss
20V
Entrada-Capacitancia-Ciss-Vds
7800pF @ 10V
Función FET
Logic Level Gate, 2.5V Drive
Corriente-Continuo-Drenaje-Id-25 ° C
25A (Ta), 100A (Tc)
Rds-On-Max-Id-Vgs
2.6 mOhm @ 50A, 4.5V
Vgs-th-Max-Id
1.2V @ 200μA
Puerta-Carga-Qg-Vgs
52.7nC @ 4.5V
Disipación de potencia Pd
2.8 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
9 ns
Hora de levantarse
115 ns
Vgs-Puerta-Fuente-Voltaje
12 V
Id-corriente-de-drenaje-continua
25 A
Vds-Drain-Source-Breakdown-Voltage
20 V
Resistencia a la fuente de desagüe de Rds
2.6 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
52 ns
Tiempo de retardo de encendido típico
21 ns
Modo de canal
Mejora
Tags
BSC026N02, BSC026N0, BSC026, BSC02, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descripción Valores Precio
BSC026N02KSGAUMA1
DISTI # V72:2272_06384322		Infineon Technologies AGTrans MOSFET N-CH 20V 25A 8-Pin TDSON EP T/R
RoHS: Compliant		4849
  • 3000:$0.6278
  • 1000:$0.6342
  • 500:$0.7785
  • 250:$0.8718
  • 100:$0.8814
  • 25:$1.0937
  • 10:$1.1069
  • 1:$1.2548
BSC026N02KSGAUMA1
DISTI # BSC026N02KSGAUMA1CT-ND		Infineon Technologies AGMOSFET N-CH 20V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		8909In Stock
  • 1000:$0.8016
  • 500:$1.0154
  • 100:$1.3094
  • 10:$1.6570
  • 1:$1.8700
BSC026N02KSGAUMA1
DISTI # BSC026N02KSGAUMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 20V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		8909In Stock
  • 1000:$0.8016
  • 500:$1.0154
  • 100:$1.3094
  • 10:$1.6570
  • 1:$1.8700
BSC026N02KSGAUMA1
DISTI # BSC026N02KSGAUMA1TR-ND		Infineon Technologies AGMOSFET N-CH 20V 100A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.6901
BSC026N02KSGAUMA1
DISTI # 30701482		Infineon Technologies AGTrans MOSFET N-CH 20V 25A 8-Pin TDSON EP T/R
RoHS: Compliant		5000
  • 10000:$0.5798
  • 5000:$0.6029
BSC026N02KSGAUMA1
DISTI # 26195427		Infineon Technologies AGTrans MOSFET N-CH 20V 25A 8-Pin TDSON EP T/R
RoHS: Compliant		4849
  • 3000:$0.6278
  • 1000:$0.6342
  • 500:$0.7785
  • 250:$0.8718
  • 100:$0.8814
  • 25:$1.0937
  • 11:$1.1069
BSC026N02KSGAUMA1
DISTI # BSC026N02KSGAUMA1		Infineon Technologies AGTrans MOSFET N-CH 20V 25A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC026N02KSGAUMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.6789
  • 10000:$0.6549
  • 20000:$0.6309
  • 30000:$0.6099
  • 50000:$0.5989
BSC026N02KSGAUMA1
DISTI # 726-BSC026N02KSGAUMA		Infineon Technologies AGMOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2
RoHS: Compliant		2883
  • 1:$1.5500
  • 10:$1.3300
  • 100:$1.0200
  • 500:$0.8970
  • 1000:$0.7080
BSC026N02KS G
DISTI # 726-BSC026N02KSG		Infineon Technologies AGMOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2
RoHS: Compliant		7566
  • 1:$1.3700
  • 10:$1.1700
  • 100:$0.8920
  • 500:$0.7880
BSC026N02KSGInfineon Technologies AGPower Field-Effect Transistor, 25A I(D), 20V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		40500
  • 1000:$0.5700
  • 500:$0.6000
  • 100:$0.6200
  • 25:$0.6500
  • 1:$0.7000
BSC026N02KSGAUMA1
DISTI # 7528154P		Infineon Technologies AGMOSFET N-CHANNEL 20V 25A OPTIMOS2 TDSON8, RL3490
  • 50:£0.8500
  • 250:£0.6650
  • 1250:£0.4650
  • 2500:£0.4400
BSC026N02KSGAUMA1
DISTI # 1775434		Infineon Technologies AGMOSFET, N CH, 100A, 20V, PG-TDSON-8
RoHS: Compliant		0
  • 1:$2.1700
  • 10:$1.8500
  • 100:$1.4100
  • 500:$1.2500
  • 1000:$0.9840
  • 5000:$0.9840
BSC026N02KSGAUMA1
DISTI # C1S322000653078		Infineon Technologies AGMOSFETs
RoHS: Compliant		4849
  • 250:$0.9013
  • 100:$0.9038
  • 25:$1.1116
  • 10:$1.1161
BSC026N02KSGAUMA1
DISTI # C1S322000644539		Infineon Technologies AGMOSFETs
RoHS: Compliant		5000
  • 5000:$0.6420
Imagen Parte # Descripción
BSC024NE2LS

Mfr.#: BSC024NE2LS

OMO.#: OMO-BSC024NE2LS

 MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
BSC020N025S G

Mfr.#: BSC020N025S G

OMO.#: OMO-BSC020N025S-G-INFINEON-TECHNOLOGIES

 MOSFET N-CH 25V 100A TDSON-8
BSC020N03LSG,1N4148W T/R

Mfr.#: BSC020N03LSG,1N4148W T/R

OMO.#: OMO-BSC020N03LSG-1N4148W-T-R-1190

 Nuevo y original
BSC022N03LSG

Mfr.#: BSC022N03LSG

OMO.#: OMO-BSC022N03LSG-1190

 Nuevo y original
BSC022N03S 30V,50A,FD100

Mfr.#: BSC022N03S 30V,50A,FD100

OMO.#: OMO-BSC022N03S-30V-50A-FD100-1190

 Nuevo y original
BSC022N03S,MOSFET,30V,50

Mfr.#: BSC022N03S,MOSFET,30V,50

OMO.#: OMO-BSC022N03S-MOSFET-30V-50-1190

 Nuevo y original
BSC025N03MS G

Mfr.#: BSC025N03MS G

OMO.#: OMO-BSC025N03MS-G-1190

 Trans MOSFET N-CH 30V 100A 8-Pin TDSON EP
BSC026N08NS5

Mfr.#: BSC026N08NS5

OMO.#: OMO-BSC026N08NS5-1190

 POWER FIELD-EFFECT TRANSISTOR, 23A I(D), 80V, 0.0026OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
BSC028N06LS3G

Mfr.#: BSC028N06LS3G

OMO.#: OMO-BSC028N06LS3G-1190

 23 A, 60 V, 0.0028 ohm, N-CHANNEL, Si, POWER, MOSFET
BSC028N06LS3GATMA1

Mfr.#: BSC028N06LS3GATMA1

OMO.#: OMO-BSC028N06LS3GATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 60V 100A TDSON-8
Disponibilidad
Valores:
Available
En orden:
5000
Ingrese la cantidad:
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