FDMA1024NZ

FDMA1024NZ
Mfr. #:
FDMA1024NZ
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET 20V Dual N-Channel PowerTrench
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDMA1024NZ Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
FDMA1024NZ más información
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
MicroFET-6
Número de canales:
2 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
20 V
Id - Corriente de drenaje continua:
5 A
Rds On - Resistencia de la fuente de drenaje:
54 mOhms
Vgs - Voltaje puerta-fuente:
8 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
1.4 W
Configuración:
Doble
Modo de canal:
Mejora
Nombre comercial:
PowerTrench
Embalaje:
Carrete
Altura:
0.75 mm
Longitud:
2 mm
Producto:
Pequeña señal MOSFET
Serie:
FDMA1024NZ
Tipo de transistor:
2 N-Channel
Ancho:
2 mm
Marca:
ON Semiconductor / Fairchild
Otoño:
2.2 ns
Tipo de producto:
MOSFET
Hora de levantarse:
2.2 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
18 ns
Tiempo típico de retardo de encendido:
5.3 ns
Unidad de peso:
0.001411 oz
Tags
FDMA102, FDMA10, FDMA1, FDMA, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    E***o
    E***o
    RU

    Everything is fine. Works. Delivery is fast.

    2019-05-13
    L***V
    L***V
    RU

    Quality board, packaging is good, delivery is 2 months.

    2019-05-23
    A***n
    A***n
    IL

    About yes

    2019-02-17
***Yang
Transistor MOSFET Array Dual N-CH 20V 5A 6-Pin MicroFET T/R - Tape and Reel
***emi
PowerTrench® MOSFET, Dual N-Channel, 20V, 5.0A, 54mΩ
***ure Electronics
FDMA1024NZ Series 20 V 5.0 A 54 mOhm Dual N-Ch PowerTrench® MOSFET - MicroFET-6
***r Electronics
Small Signal Field-Effect Transistor, 5A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-229VCCC
***el Electronic
DC DC Converters 1 (Unlimited) 1 4-SIP Module Through Hole Isolated Module ITE (Commercial) RFM (1W) -40°C~85°C 0.45Lx0.24W x 0.39 H 11.5mmx6.0mmx10.0mm DC DC CONVERTER 5V 1W
***nell
MOSFET, NN CH, 20V, MICROFET 2X2; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):37mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:700mV; Power Dissipation Pd:700mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MicroFET; No. of Pins:6
***rchild Semiconductor
This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
***ure Electronics
ZXMN2F30FH Series N-Channel 20 V 0.045 Ohm Power MOSFET Surface Mount - SOT-23-3
***(Formerly Allied Electronics)
Diodes Inc ZXMN2F30FHTA N-channel MOSFET, 4.9 A, 20 V, 3-Pin SOT-23
***el Electronic
Trans MOSFET N-CH 20V 4.9A Automotive 3-Pin SOT-23 T/R
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Variants: Enhancement mode Power dissipation: 1.4 W
***ment14 APAC
MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:4.9A; Drain Source Voltage Vds:20V; On Resistance Rds(on):45mohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:960mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:4.9A; On State Resistance @ Vgs = 2.5V:65mohm; On State Resistance @ Vgs = 4.5V:45mohm; Package / Case:SOT-23; Power Dissipation Pd:960mW; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:12V; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Min:0.6V
***ure Electronics
Dual N/P-Channel 20 V 160/530 mOhm 4.2/7.7 nC 1.4 W Mosfet MICROFET 1.6x1.6
***r Electronics
Small Signal Field-Effect Transistor, 3.8A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
***nell
MOSFET,NP CH,W,20V,MICROFET1.6X1.6; Module Configuration:Dual; Transistor Polarity:N and P Channel; Continuous Drain Current Id:3.8A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.055ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:700mV; Power Dissipation Pd:1.4W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MicroFET; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Power Dissipation Pd:1.4W
***rchild Semiconductor
This device is designed specifically as a single-package solution for a DC/DC switching MOSFET in cellular handset and other mobile applications. It features an independent N-channel & P-channel MOSFET with low on-state resistance for minimum conduction losses. The gate charge of each MOSFET is also minimized to allow high frequency switching directly from the controlling device.The MicroFET™ 1.6x1.6 thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.
***Yang
Transistor MOSFET Array Dual N-CH 20V 3.8A 6-Pin MicroFET T/R - Tape and Reel
***emi
Dual N-Channel Power Trench® MOSFET 20V, 3.8A, 66mΩ
***nell
MOSFET, NN CH, 20V, 3.8A, MFET1.6X1.6; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:3.8A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.055ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:700mV; Power Dissipation Pd:1.4W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MicroFET; No. of Pins:6; MSL:MSL 1 - Unlimited
***rchild Semiconductor
This device is designed specifically as a single package solution for dual switching requirement in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for it's physical size and is well suited to switching and linear mode applications.
***(Formerly Allied Electronics)
IRF7301PBF Dual N-channel MOSFET Transistor; 5.2 A; 20 V; 8-Pin SOIC
***itex
Transistor: 2xN-MOSFET; unipolar; 20V; 5.2A; 0.05ohm; 2W; -55+150 deg.C; SMD; SO8
***ure Electronics
Dual N-Channel 20 V 0.05 Ohm 20 nC HEXFET® Power Mosfet - SOIC-8
*** Source Electronics
MOSFET 2N-CH 20V 5.2A 8-SOIC / Trans MOSFET N-CH Si 20V 5.2A 8-Pin SOIC T/R
***id Electronics
Transistor MOSFET 2xN-Ch. 5,2A/20V SO8 IRF 7301 TRPBF
***roFlash
Power Field-Effect Transistor, 4.3A I(D), 20V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***nell
MOSFET, DUAL, NN, LOGIC, SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 4.3A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.05ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 700mV
***trelec
Transistor Polarity = N-Channel / Configuration = Dual / Continuous Drain Current (Id) A = 5.7 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 50 / Gate-Source Voltage V = 12 / Fall Time ns = 51 / Rise Time ns = 42 / Turn-OFF Delay Time ns = 32 / Turn-ON Delay Time ns = 9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2
***icroelectronics
N-channel 20 V, 0.030 Ohm, 6 A, 2.7 V drive STripFET(TM) II Power MOSFET in SO-8 package
***ure Electronics
N Channel 20 V 40 mOhm SMT StripFET II Power MOSFET - SOIC-8
*** Source Electronics
Trans MOSFET N-CH 20V 6A 8-Pin SO N T/R / MOSFET N-CH 20V 6A 8SOIC
***ark
MOSFET, N, SO-8; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:2.7V; Gate Source Threshold Voltage Max:600mV; Power Dissipation:2.5W RoHS Compliant: Yes
***nell
MOSFET, N, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 6A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.045ohm; Rds(on) Test Voltage Vgs: 2.7V; Threshold Voltage Vgs: 600mV; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 6A; Fall Time tf: 10ns; No. of Transistors: 1; On State Resistance @ Vgs = 4.5V: 40mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pin Configuration: (1+2+3)S,4G, (8+7+6+5)D; Pulse Current Idm: 24A; Rise Time: 33ns; Voltage Vds Typ: 20V; Voltage Vgs Max: 12V; Voltage Vgs Rds on Measurement: 2.7V
Fairchild PowerTrench MOSFETs
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
Parte # Mfg. Descripción Valores Precio
FDMA1024NZ
DISTI # V72:2272_06337781
ON SemiconductorTrans MOSFET N-CH 20V 5A 6-Pin MLP EP T/R153
  • 100:$0.4383
  • 25:$0.6085
  • 10:$0.7437
  • 1:$0.8917
FDMA1024NZ
DISTI # V36:1790_06337781
ON SemiconductorTrans MOSFET N-CH 20V 5A 6-Pin MLP EP T/R0
  • 3000000:$0.2563
  • 1500000:$0.2565
  • 300000:$0.2748
  • 30000:$0.3059
  • 3000:$0.3110
FDMA1024NZ
DISTI # FDMA1024NZCT-ND
ON SemiconductorMOSFET 2N-CH 20V 5A 6-MICROFET
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
13980In Stock
  • 1000:$0.3807
  • 500:$0.4759
  • 100:$0.6020
  • 10:$0.7850
  • 1:$0.8900
FDMA1024NZ
DISTI # FDMA1024NZDKR-ND
ON SemiconductorMOSFET 2N-CH 20V 5A 6-MICROFET
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
13980In Stock
  • 1000:$0.3807
  • 500:$0.4759
  • 100:$0.6020
  • 10:$0.7850
  • 1:$0.8900
FDMA1024NZ
DISTI # FDMA1024NZTR-ND
ON SemiconductorMOSFET 2N-CH 20V 5A 6-MICROFET
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
12000In Stock
  • 30000:$0.2926
  • 15000:$0.3003
  • 6000:$0.3119
  • 3000:$0.3350
DEV-09627
DISTI # 1568-1539-ND
SparkFun ElectronicsMINI FET SHIELD
RoHS: Compliant
Min Qty: 1
Container: Bulk
Limited Supply - Call
    FDMA1024NZ
    DISTI # 25632147
    ON SemiconductorTrans MOSFET N-CH 20V 5A 6-Pin MLP EP T/R54000
    • 3000:$0.3110
    FDMA1024NZ
    DISTI # 33101873
    ON SemiconductorTrans MOSFET N-CH 20V 5A 6-Pin MLP EP T/R6000
    • 3000:$0.2936
    FDMA1024NZ
    DISTI # 32708394
    ON SemiconductorTrans MOSFET N-CH 20V 5A 6-Pin MLP EP T/R153
    • 21:$0.8917
    FDMA1024NZ
    DISTI # FDMA1024NZ
    ON SemiconductorTrans MOSFET N-CH 20V 5A 6-Pin MicroFET T/R (Alt: FDMA1024NZ)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel
    Asia - 0
    • 150000:$0.3607
    • 75000:$0.3667
    • 30000:$0.3793
    • 15000:$0.3929
    • 9000:$0.4074
    • 6000:$0.4231
    • 3000:$0.4400
    FDMA1024NZ
    DISTI # FDMA1024NZ
    ON SemiconductorTrans MOSFET N-CH 20V 5A 6-Pin MicroFET T/R - Tape and Reel (Alt: FDMA1024NZ)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel
    Americas - 0
    • 30000:$0.2709
    • 18000:$0.2779
    • 12000:$0.2819
    • 6000:$0.2849
    • 3000:$0.2869
    FDMA1024NZ
    DISTI # FDMA1024NZ
    ON SemiconductorTrans MOSFET N-CH 20V 5A 6-Pin MicroFET T/R - Bulk (Alt: FDMA1024NZ)
    RoHS: Compliant
    Min Qty: 1042
    Container: Bulk
    Americas - 0
    • 10420:$0.2959
    • 5210:$0.3029
    • 3126:$0.3069
    • 2084:$0.3109
    • 1042:$0.3129
    FDMA1024NZ
    DISTI # FDMA1024NZ
    ON SemiconductorTrans MOSFET N-CH 20V 5A 6-Pin MicroFET T/R (Alt: FDMA1024NZ)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel
    Europe - 0
    • 30000:€0.2729
    • 18000:€0.2939
    • 12000:€0.3179
    • 6000:€0.3469
    • 3000:€0.4249
    FDMA1024NZ
    DISTI # 73R3645
    ON SemiconductorTrans MOSFET N-CH 20V 5A 6-Pin MicroFET T/R - Product that comes on tape, but is not reeled (Alt: 73R3645)
    RoHS: Compliant
    Min Qty: 1
    Container: Ammo Pack
    Americas - 0
    • 1:$0.3660
    FDMA1024NZ
    DISTI # 07R8499
    ON SemiconductorMOSFET Transistor,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:5A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.037ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:700mV,No. of Pins:6Pins RoHS Compliant: Yes0
    • 24000:$0.2890
    • 9000:$0.3000
    • 1:$0.3110
    FDMA1024NZ
    DISTI # 73R3645
    ON SemiconductorMOSFET Transistor,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:5A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.037ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:700mV,No. of Pins:6Pins RoHS Compliant: Yes0
    • 1000:$0.3660
    • 500:$0.3950
    • 250:$0.4250
    • 100:$0.4540
    • 50:$0.5750
    • 25:$0.6960
    • 1:$0.8440
    FDMA1024NZ
    DISTI # 512-FDMA1024NZ
    ON SemiconductorMOSFET 20V Dual N-Channel PowerTrench
    RoHS: Compliant
    8199
    • 1:$0.8200
    • 10:$0.6820
    • 100:$0.4400
    • 1000:$0.3520
    • 3000:$0.2980
    • 9000:$0.2870
    • 24000:$0.2750
    FDMA1024NZFairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 5A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-229VCCC
    RoHS: Compliant
    306518
    • 1000:$0.3200
    • 500:$0.3300
    • 100:$0.3500
    • 25:$0.3600
    • 1:$0.3900
    FDMA1024NZFairchild Semiconductor Corporation5000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-229VCCC90
    • 38:$0.3600
    • 8:$0.5400
    • 1:$0.7200
    FDMA1024NZ
    DISTI # 7396216P
    ON SemiconductorMOSFET N CHANNEL 20V 5A 6 PIN MICROFET, RL6400
    • 125:£0.2080
    FDMA1024NZFairchild Semiconductor Corporation 25
      FDMA1024NZ
      DISTI # 2101471
      ON SemiconductorMOSFET, NN CH, 20V, MICROFET 2X22500
      • 500:£0.2690
      • 250:£0.3060
      • 100:£0.3430
      • 10:£0.5830
      • 1:£0.7300
      FDMA1024NZ
      DISTI # 2101471RL
      ON SemiconductorMOSFET, NN CH, 20V, MICROFET 2X2
      RoHS: Compliant
      0
      • 9000:$0.4420
      • 3000:$0.4580
      • 1000:$0.5410
      • 100:$0.6770
      • 5:$1.0600
      FDMA1024NZ
      DISTI # 2101471
      ON SemiconductorMOSFET, NN CH, 20V, MICROFET 2X2
      RoHS: Compliant
      2391
      • 9000:$0.4420
      • 3000:$0.4580
      • 1000:$0.5410
      • 100:$0.6770
      • 5:$1.0600
      Imagen Parte # Descripción
      nRF52832-QFAA-R

      Mfr.#: nRF52832-QFAA-R

      OMO.#: OMO-NRF52832-QFAA-R

      RF System on a Chip - SoC BLE ANT/ANT+ 2.4GHz SOC
      XC61CC2002MR-G

      Mfr.#: XC61CC2002MR-G

      OMO.#: OMO-XC61CC2002MR-G

      Supervisory Circuits LowQuiescent Current Voltage Detector
      FT232RL-REEL

      Mfr.#: FT232RL-REEL

      OMO.#: OMO-FT232RL-REEL

      USB Interface IC USB to Serial UART Enhanced IC SSOP-28
      FDMA1032CZ

      Mfr.#: FDMA1032CZ

      OMO.#: OMO-FDMA1032CZ

      MOSFET 20V Complementary PowerTrench MOSFET
      2450AT18B100E

      Mfr.#: 2450AT18B100E

      OMO.#: OMO-2450AT18B100E

      Antennas 2.45GHz ANTENNA
      CX2016DB32000D0WZRC1

      Mfr.#: CX2016DB32000D0WZRC1

      OMO.#: OMO-CX2016DB32000D0WZRC1

      Crystals AEC-Q200 32000kHz 8pF 2x1.6mm
      CSTNE8M00G550000R0

      Mfr.#: CSTNE8M00G550000R0

      OMO.#: OMO-CSTNE8M00G550000R0

      Resonators 8.0000MHz 33pF SMD CHP Resntr
      XC61CC2002MR-G

      Mfr.#: XC61CC2002MR-G

      OMO.#: OMO-XC61CC2002MR-G-TOREX-SEMICONDUCTOR

      Supervisory Circuits LowQuiescent Current Voltage Detecto
      FT232RL-REEL

      Mfr.#: FT232RL-REEL

      OMO.#: OMO-FT232RL-REEL-FUTURE-TECHNOLOGY-DEVICES-INTL

      USB Interface IC USB to Serial UART Enhanced IC SSOP-28
      CSTNE8M00G550000R0

      Mfr.#: CSTNE8M00G550000R0

      OMO.#: OMO-CSTNE8M00G550000R0-MURATA-ELECTRONICS

      Piezoelectric Ceramic Resonator 8.0000MHZ 33PF SMD
      Disponibilidad
      Valores:
      Available
      En orden:
      1991
      Ingrese la cantidad:
      El precio actual de FDMA1024NZ es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,82 US$
      0,82 US$
      10
      0,68 US$
      6,82 US$
      100
      0,44 US$
      44,00 US$
      1000
      0,35 US$
      352,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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