FGW15N40A

FGW15N40A
Mfr. #:
FGW15N40A
Fabricante:
Fuji Electric Co Ltd
Descripción:
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FGW15N40A Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
FGW1, FGW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ser
MOSFETs N-CH/400V/ 30A/TRENCH
Parte # Mfg. Descripción Valores Precio
FGW15N120HD
DISTI # 70241437
Fuji Electric Co LtdIC,IGBT,High-Speed V-Series,1200V,15A,1550W,TP-247-P2
RoHS: Not Compliant
0
  • 100:$4.8900
FGW15N120HD
DISTI # 7729020
Fuji Electric Co LtdFuji Electric FGW15N120HD IGBT, 15 A 1200 V, 3-Pin TO-247, EA
Min Qty: 1
Container: Bulk
0
  • 1:$7.3830
  • 5:$7.0060
  • 15:$6.6420
  • 30:$6.2780
  • 60:$5.9010
FGW15N120HD
DISTI # 1684684
Fuji Electric Co LtdIn a Tube of 30, Fuji Electric FGW15N120HD IGBT, 15 A 1200 V, 3-Pin TO-247, TU
Min Qty: 30
Container: Tube
0
  • 30:$6.7040
FGW15N120H
DISTI # FE0000000000862
Fuji Electric Co LtdPower Field-Effect Transistor, 1A I(D),0.6ohm,2-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET
RoHS: Compliant
0 in Stock0 on Order
    FGW15N120H-S31PP-P2
    DISTI # FE0000000001754
    Fuji Electric Co LtdDISCRETE IGBT- High Speed V
    RoHS: Compliant
    0 in Stock0 on Order
    • 600:$1.6300
    • 1:$1.7500
    FGW15N120HD-S31PP-P2
    DISTI # FE0000000000863
    Fuji Electric Co LtdDISCRETE IGBT- High Speed V
    RoHS: Compliant
    0 in Stock0 on Order
    • 600:$1.9600
    • 1:$2.1100
    FGW15N120HD
    DISTI # 2414404
    Fuji Electric Co LtdIGBT, SINGLE, 1.2KV, 31A, TO-247-3
    RoHS: Compliant
    0
    • 500:£3.5500
    • 250:£3.6300
    • 100:£3.7000
    • 25:£3.7800
    • 1:£4.1900
    Imagen Parte # Descripción
    FGW15N120H

    Mfr.#: FGW15N120H

    OMO.#: OMO-FGW15N120H-1190

    Power Field-Effect Transistor, 1A I(D),0.6ohm,2-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET
    FGW15N120HD

    Mfr.#: FGW15N120HD

    OMO.#: OMO-FGW15N120HD-1190

    IGBT, SINGLE, 1.2KV, 31A, TO-247-3, DC Collector Current:31A, Collector Emitter Saturation Voltage Vce(on):1.8V, Power Dissipation Pd:155W, Collector Emitter Voltage V(br)ceo:1.2kV, No. of Pins:3
    FGW15N120VD

    Mfr.#: FGW15N120VD

    OMO.#: OMO-FGW15N120VD-1190

    IGBT, SINGLE, 1.2KV, 28A, TO-247-3, DC Collector Current:28A, Collector Emitter Saturation Voltage Vce(on):1.85V, Power Dissipation Pd:155W, Collector Emitter Voltage V(br)ceo:1.2kV, No. of Pins:
    FGW15N40

    Mfr.#: FGW15N40

    OMO.#: OMO-FGW15N40-1190

    Nuevo y original
    FGW15N40A

    Mfr.#: FGW15N40A

    OMO.#: OMO-FGW15N40A-1190

    Nuevo y original
    Disponibilidad
    Valores:
    Available
    En orden:
    1500
    Ingrese la cantidad:
    El precio actual de FGW15N40A es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,00 US$
    0,00 US$
    10
    0,00 US$
    0,00 US$
    100
    0,00 US$
    0,00 US$
    500
    0,00 US$
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    1000
    0,00 US$
    0,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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