OMO ElectronicOMO Electronic
Expand menu
Hola, regístrateMi cuenta
0 Carro

SIA527DJ-T1-GE3

SIA527DJ-T1-GE3
Mfr. #:
SIA527DJ-T1-GE3
Fabricante:
Vishay
Descripción:
MOSFET N/P-CH 12V 4.5A SC-70-6
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIA527DJ-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
SIA527DJ-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante
Vishay Siliconix
categoria de producto
FET: matrices
Serie
TrincheraFETR
embalaje
Embalaje alternativo de Digi-ReelR
Unidad de peso
0.000988 oz
Estilo de montaje
SMD / SMT
Nombre comercial
TrenchFET
Paquete-Estuche
PowerPAKR SC-70-6 Dual
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
2 Channel
Paquete de dispositivo de proveedor
PowerPAKR SC-70-6 Dual
Configuración
1 N-Channel 1 P-Channel
Tipo FET
Canal N y P
Potencia máxima
7.8W
Tipo transistor
1 N-Channel 1 P-Channel
Drenaje-a-fuente-voltaje-Vdss
12V
Entrada-Capacitancia-Ciss-Vds
500pF @ 6V
Función FET
Puerta de nivel lógico
Corriente-Continuo-Drenaje-Id-25 ° C
4.5A
Rds-On-Max-Id-Vgs
29 mOhm @ 5A, 4.5V
Vgs-th-Max-Id
1V @ 250μA
Puerta-Carga-Qg-Vgs
15nC @ 8V
Disipación de potencia Pd
7.8 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
10 ns
Hora de levantarse
10 ns
Vgs-Puerta-Fuente-Voltaje
+ /- 8 V
Id-corriente-de-drenaje-continua
4.5 A
Vds-Drain-Source-Breakdown-Voltage
12 V
Vgs-th-Gate-Source-Threshold-Voltage
1 V - 1 V
Resistencia a la fuente de desagüe de Rds
41 mOhms
Polaridad del transistor
Canal N Canal P
Tiempo de retardo de apagado típico
22 ns
Tiempo de retardo de encendido típico
10 ns
Qg-Gate-Charge
5.6 nC
Modo de canal
Mejora
Tags
SIA5, SIA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N/P-CH 12V 4.5A/4.5A 6-Pin PowerPAK SC-70 T/R
*** Americas
N- AND P-CHANNEL 12-V (D-S) MOSFET
***ark
N/P-Ch PPAK SC-70 12V 29/41mohms @ 4.5V
***ronik
N+P-MOS-FET 4,5A 12V PP-SC70-6
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
N & P Channel Pair Thermally Enhanced MOSFETs
Vishay N and P Channel Pair Thermally Enhanced MOSFETs combine the N-channel and P-channel MOSFET pairs into one single package. These N and P Channel MOSFETs are designed to minimize the ON-state Resistance (RDS(on)) while maintaining superior switching performance. In addition, combining both the N-channel and P-channel MOSFETs into a single IC saves PCB space and simplifies application design. 
Parte # Mfg. Descripción Valores Precio
SIA527DJ-T1-GE3
DISTI # V72:2272_09216728		Vishay IntertechnologiesTrans MOSFET N/P-CH Si 12V 4.5A 6-Pin PowerPAK SC-70 T/R
RoHS: Compliant		4416
  • 3000:$0.1770
  • 1000:$0.2034
  • 500:$0.2497
  • 250:$0.2869
  • 100:$0.3187
  • 25:$0.4239
  • 10:$0.4710
  • 1:$0.6063
SIA527DJ-T1-GE3
DISTI # V36:1790_09216728		Vishay IntertechnologiesTrans MOSFET N/P-CH Si 12V 4.5A 6-Pin PowerPAK SC-70 T/R
RoHS: Compliant		0
  • 6000000:$0.1636
  • 3000000:$0.1638
  • 600000:$0.1750
  • 60000:$0.1925
  • 6000:$0.1953
SIA527DJ-T1-GE3
DISTI # SIA527DJ-T1-GE3CT-ND		Vishay SiliconixMOSFET N/P-CH 12V 4.5A SC-70-6
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		36100In Stock
  • 1000:$0.2206
  • 500:$0.2855
  • 100:$0.3634
  • 10:$0.4870
  • 1:$0.5700
SIA527DJ-T1-GE3
DISTI # SIA527DJ-T1-GE3DKR-ND		Vishay SiliconixMOSFET N/P-CH 12V 4.5A SC-70-6
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		36100In Stock
  • 1000:$0.2206
  • 500:$0.2855
  • 100:$0.3634
  • 10:$0.4870
  • 1:$0.5700
SIA527DJ-T1-GE3
DISTI # SIA527DJ-T1-GE3TR-ND		Vishay SiliconixMOSFET N/P-CH 12V 4.5A SC-70-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		33000In Stock
  • 30000:$0.1613
  • 15000:$0.1701
  • 6000:$0.1827
  • 3000:$0.1953
SIA527DJ-T1-GE3
DISTI # 27089799		Vishay IntertechnologiesTrans MOSFET N/P-CH Si 12V 4.5A 6-Pin PowerPAK SC-70 T/R
RoHS: Compliant		4416
  • 38:$0.6063
SIA527DJ-T1-GE3
DISTI # SIA527DJ-T1-GE3		Vishay IntertechnologiesTrans MOSFET N/P-CH 12V 4.5A/4.5A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA527DJ-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 12000
    SIA527DJ-T1-GE3
    DISTI # SIA527DJ-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N/P-CH 12V 4.5A/4.5A 6-Pin PowerPAK SC-70 T/R (Alt: SIA527DJ-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
    • 30000:€0.1559
    • 18000:€0.1669
    • 12000:€0.1809
    • 6000:€0.2109
    • 3000:€0.3089
    SIA527DJ-T1-GE3
    DISTI # 67X6801    		Vishay IntertechnologiesN- AND P-CHANNEL 12-V (D-S) MOSFET0
    • 50000:$0.1550
    • 30000:$0.1620
    • 20000:$0.1740
    • 10000:$0.1860
    • 5000:$0.2020
    • 1:$0.2070
    SIA527DJ-T1-GE3
    DISTI # 78-SIA527DJ-T1-GE3    		Vishay IntertechnologiesMOSFET -12V Vds 8V Vgs SC-70 N&P PAIR
    RoHS: Compliant    		622
    • 1:$0.5600
    • 10:$0.4330
    • 100:$0.3210
    • 500:$0.2640
    • 1000:$0.2040
    • 3000:$0.1850
    • 6000:$0.1730
    • 9000:$0.1620
    Imagen Parte # Descripción
    SIA527DJ-T1-GE3

    Mfr.#: SIA527DJ-T1-GE3

    OMO.#: OMO-SIA527DJ-T1-GE3

    		 MOSFET -12V Vds 8V Vgs SC-70 N&P PAIR
    SIA527DJ-T1-GE3

    Mfr.#: SIA527DJ-T1-GE3

    OMO.#: OMO-SIA527DJ-T1-GE3-VISHAY

    		 MOSFET N/P-CH 12V 4.5A SC-70-6
    Disponibilidad
    Valores:
    Available
    En orden:
    5000
    Ingrese la cantidad:
    El precio actual de SIA527DJ-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,00 US$
    0,00 US$
    10
    0,00 US$
    0,00 US$
    100
    0,00 US$
    0,00 US$
    500
    0,00 US$
    0,00 US$
    1000
    0,00 US$
    0,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
    Empezar con
    Top