IPU95R450P7AKMA1

IPU95R450P7AKMA1
Mfr. #:
IPU95R450P7AKMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET 950 V CoolMOS P7
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPU95R450P7AKMA1 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
IPU95R450P7AKMA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
IPAK-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
950 V
Id - Corriente de drenaje continua:
14 A
Rds On - Resistencia de la fuente de drenaje:
450 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2.5 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
35 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
104 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
CoolMOS
Embalaje:
Tubo
Serie:
P7
Tipo de transistor:
1 N-Channel
Marca:
Infineon Technologies
Otoño:
5 ns
Tipo de producto:
MOSFET
Hora de levantarse:
7 ns
Cantidad de paquete de fábrica:
1500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
45 ns
Tiempo típico de retardo de encendido:
10 ns
Parte # Alias:
IPU95R450P7
Tags
IPU9, IPU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
950V CoolMOS™ P7 SJ MOSFETs
Infineon Technologies 950V CoolMOS™ P7 SJ MOSFETs employs 950V super junction technology and combines best-in-class performance with state of the art ease-of-use. These MOSFETs come with an integrated Zener diode Electro Static Discharge (ESD) protection. The integrated diode improves ESD robustness that reduces ESD-related yield loss and provides exceptional ease-of-use levels. These MOSFETs offer 3V VGS(th) and narrow tolerance of only ±0.5V that makes it easy to drive and design-in. The 950V SJ MOSFETs provide low DPAK RDS(on) that enables higher density while decreasing BOM and assembly cost.
Parte # Mfg. Descripción Valores Precio
IPU95R450P7AKMA1
DISTI # V36:1790_22710500
Infineon Technologies AG950V Power Transistor0
  • 1500000:$0.9288
  • 750000:$0.9325
  • 150000:$1.3650
  • 15000:$2.1970
  • 1500:$2.3400
IPU95R450P7AKMA1
DISTI # V99:2348_22710500
Infineon Technologies AG950V Power Transistor0
  • 1500000:$0.9984
  • 750000:$1.0020
  • 150000:$1.4150
  • 15000:$2.2050
  • 1500:$2.3400
IPU95R450P7AKMA1
DISTI # IPU95R450P7AKMA1-ND
Infineon Technologies AGMOSFET N-CH 950V 14A TO251
RoHS: Compliant
Min Qty: 1
Container: Tube
457In Stock
  • 6000:$1.0883
  • 3000:$1.1302
  • 1500:$1.2139
  • 100:$1.7832
  • 25:$2.0928
  • 10:$2.2180
  • 1:$2.4700
IPU95R450P7AKMA1
DISTI # IPU95R450P7AKMA1
Infineon Technologies AGTrans MOSFET N-CH 950V 14A 3-Pin TO-251 Tube - Rail/Tube (Alt: IPU95R450P7AKMA1)
RoHS: Compliant
Min Qty: 1500
Container: Tube
Americas - 0
  • 15000:$1.0129
  • 9000:$1.0309
  • 6000:$1.0669
  • 3000:$1.1069
  • 1500:$1.1479
IPU95R450P7AKMA1
DISTI # SP001792326
Infineon Technologies AGTrans MOSFET N-CH 950V 14A 3-Pin TO-251 Tube (Alt: SP001792326)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
  • 1000:€0.9829
  • 500:€1.0009
  • 100:€1.0159
  • 50:€1.0339
  • 25:€1.1079
  • 10:€1.3329
  • 1:€1.7119
IPU95R450P7AKMA1
DISTI # 71AC0404
Infineon Technologies AGMOSFET, 950V, 14A, 150DEG C, 104W,Transistor Polarity:N Channel,Continuous Drain Current Id:14A,Drain Source Voltage Vds:950V,On Resistance Rds(on):0.38ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes471
  • 5000:$1.0400
  • 2500:$1.0800
  • 1000:$1.1600
  • 500:$1.4000
  • 100:$1.6100
  • 10:$2.0100
  • 1:$2.3600
IPU95R450P7AKMA1
DISTI # 726-IPU95R450P7AKMA1
Infineon Technologies AGMOSFET 950 V CoolMOS P7
RoHS: Compliant
0
  • 1:$2.3400
  • 10:$1.9900
  • 100:$1.5900
  • 500:$1.3900
  • 1000:$1.1500
  • 2500:$1.0700
  • 5000:$1.0300
IPU95R450P7AKMA1
DISTI # 2916138
Infineon Technologies AGMOSFET, 950V, 14A, 150DEG C, 104W
RoHS: Compliant
471
  • 1000:$1.6000
  • 500:$1.6300
  • 250:$1.7200
  • 100:$1.8200
  • 10:$2.0500
  • 1:$2.2100
IPU95R450P7AKMA1
DISTI # 2916138
Infineon Technologies AGMOSFET, 950V, 14A, 150DEG C, 104W471
  • 500:£1.0800
  • 250:£1.1600
  • 100:£1.2300
  • 10:£1.5500
  • 1:£2.0500
Imagen Parte # Descripción
NCV7342MW3R2G

Mfr.#: NCV7342MW3R2G

OMO.#: OMO-NCV7342MW3R2G

CAN Interface IC NCV7342MW3R2G
FCU360N65S3R0

Mfr.#: FCU360N65S3R0

OMO.#: OMO-FCU360N65S3R0

MOSFET SUPERFET3 650V 10A 360 mOhm
IPU95R1K2P7AKMA1

Mfr.#: IPU95R1K2P7AKMA1

OMO.#: OMO-IPU95R1K2P7AKMA1

MOSFET 950 V CoolMOS P7
FDMC86183

Mfr.#: FDMC86183

OMO.#: OMO-FDMC86183

MOSFET PTNG 100/20V Nch Trench Mosfet
MRF101AN

Mfr.#: MRF101AN

OMO.#: OMO-MRF101AN

RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V
MRFX600HR5

Mfr.#: MRFX600HR5

OMO.#: OMO-MRFX600HR5

RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 600 W CW over 1.8-400 MHz, 65 V
STPSC20H12GY-TR

Mfr.#: STPSC20H12GY-TR

OMO.#: OMO-STPSC20H12GY-TR

Schottky Diodes & Rectifiers Automotive grade 1200V Power Schottky Silicon Carbide Diode
IXFN170N25X3

Mfr.#: IXFN170N25X3

OMO.#: OMO-IXFN170N25X3

MOSFET 250V/170A Ultra Junc tion X3-Class MOSFET
C1210C223KDRACAUTO

Mfr.#: C1210C223KDRACAUTO

OMO.#: OMO-C1210C223KDRACAUTO

Multilayer Ceramic Capacitors MLCC - SMD/SMT 1kV .022pF X7R 10% Flex Term AEC-Q200
MRFX600HR5

Mfr.#: MRFX600HR5

OMO.#: OMO-MRFX600HR5-NXP-SEMICONDUCTORS

TRANS LDMOS 600W 400 MHZ 65V
Disponibilidad
Valores:
Available
En orden:
1984
Ingrese la cantidad:
El precio actual de IPU95R450P7AKMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
2,34 US$
2,34 US$
10
1,99 US$
19,90 US$
100
1,59 US$
159,00 US$
500
1,39 US$
695,00 US$
1000
1,15 US$
1 150,00 US$
2500
1,07 US$
2 675,00 US$
5000
1,03 US$
5 150,00 US$
10000
1,00 US$
9 970,00 US$
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