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SISF00DN-T1-GE3

SISF00DN-T1-GE3
Mfr. #:
SISF00DN-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 30V (S1-S2) Cmn Drn PowerPAK 1212-8SCD
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SISF00DN-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SISF00DN-T1-GE3 DatasheetSISF00DN-T1-GE3 Datasheet (P4-P6)SISF00DN-T1-GE3 Datasheet (P7)
ECAD Model:
Más información:
SISF00DN-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PowerPAK-1212-8SCD-8
Número de canales:
2 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
60 A
Rds On - Resistencia de la fuente de drenaje:
4.2 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2.1 V
Vgs - Voltaje puerta-fuente:
- 16 V, 20 V
Qg - Carga de puerta:
53 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
69.4 W
Configuración:
Doble
Modo de canal:
Mejora
Nombre comercial:
TrenchFET, PowerPAK
Embalaje:
Carrete
Serie:
SIS
Tipo de transistor:
2 N-Channel
Marca:
Vishay / Siliconix
Transconductancia directa - Mín .:
130 S
Otoño:
10 ns
Tipo de producto:
MOSFET
Hora de levantarse:
32 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
22 ns
Tiempo típico de retardo de encendido:
10 ns
Tags
SISF, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Integrated MOSFETs with Common Drain
Vishay Integrated MOSFETs with Common Drain are 1, 2 and 3-channels offering surface mounting. The Integrated MOSFETs feature N-channel, and N+P-channel options, as well as a breakdown voltage range of 20V to 200V. The Enhancement Mode MOSFETs have 6 or 8-pins, a power dissipation range of 1.5W to 69.4W, and on drain-source resistance of 2.15mΩ to 26mΩ.
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Parte # Mfg. Descripción Valores Precio
SISF00DN-T1-GE3
DISTI # SISF00DN-T1-GE3TR-ND		Vishay SiliconixMOSFET DUAL N-CH 30V POWERPAK 12
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 6000:$0.5954
  • 3000:$0.6252
SISF00DN-T1-GE3
DISTI # SISF00DN-T1-GE3CT-ND		Vishay SiliconixMOSFET DUAL N-CH 30V POWERPAK 12
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.6899
  • 500:$0.8739
  • 100:$1.0579
  • 10:$1.3570
  • 1:$1.5200
SISF00DN-T1-GE3
DISTI # SISF00DN-T1-GE3DKR-ND		Vishay SiliconixMOSFET DUAL N-CH 30V POWERPAK 12
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.6899
  • 500:$0.8739
  • 100:$1.0579
  • 10:$1.3570
  • 1:$1.5200
SISF00DN-T1-GE3
DISTI # SISF00DN-T1-GE3		Vishay IntertechnologiesTrans MOSFET Array Dual N-CH 30V 60A 8-Pin PowerPAK 1212-8SCD - Tape and Reel (Alt: SISF00DN-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 60000:$0.5449
  • 30000:$0.5599
  • 18000:$0.5759
  • 12000:$0.5999
  • 6000:$0.6189
SISF00DN-T1-GE3
DISTI # 81AC2794		Vishay IntertechnologiesMOSFET, DUAL N-CH, 30V, POWERPAK 1212,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0042ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.1V,RoHS Compliant: Yes0
  • 500:$0.8170
  • 250:$0.8830
  • 100:$0.9490
  • 50:$1.0400
  • 25:$1.1400
  • 10:$1.2300
  • 1:$1.4900
SISF00DN-T1-GE3
DISTI # 81AC3490		Vishay IntertechnologiesCOMMON-DRAIN DUAL N-CH 30V(S1-S2)MOS0
  • 10000:$0.5410
  • 6000:$0.5530
  • 4000:$0.5750
  • 2000:$0.6380
  • 1000:$0.7020
  • 1:$0.7320
SISF00DN-T1-GE3
DISTI # 78-SISF00DN-T1-GE3		Vishay IntertechnologiesMOSFET 30V (S1-S2) Cmn Drn PowerPAK 1212-8SCD
RoHS: Compliant		0
  • 1:$1.4800
  • 10:$1.2200
  • 100:$0.9400
  • 500:$0.8090
  • 1000:$0.6380
  • 3000:$0.5960
SISF00DN-T1-GE3
DISTI # 2932982		Vishay IntertechnologiesMOSFET, DUAL N-CH, 30V, POWERPAK 12120
  • 500:£0.5930
  • 250:£0.6410
  • 100:£0.6890
  • 25:£0.9010
  • 5:£0.9980
SISF00DN-T1-GE3
DISTI # 2932982		Vishay IntertechnologiesMOSFET, DUAL N-CH, 30V, POWERPAK 1212
RoHS: Compliant		0
  • 1000:$1.0100
  • 500:$1.0600
  • 250:$1.2500
  • 100:$1.5200
  • 10:$1.9300
  • 1:$2.3400
Imagen Parte # Descripción
SISF00DN-T1-GE3

Mfr.#: SISF00DN-T1-GE3

OMO.#: OMO-SISF00DN-T1-GE3

 MOSFET 30V (S1-S2) Cmn Drn PowerPAK 1212-8SCD
SISF00DN-T1-GE3

Mfr.#: SISF00DN-T1-GE3

OMO.#: OMO-SISF00DN-T1-GE3-VISHAY

 MOSFET DUAL N-CH 30V POWERPAK 12
Disponibilidad
Valores:
Available
En orden:
2000
Ingrese la cantidad:
El precio actual de SISF00DN-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,48 US$
1,48 US$
10
1,22 US$
12,20 US$
100
0,94 US$
94,00 US$
500
0,81 US$
404,50 US$
1000
0,64 US$
638,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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