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IXFP20N50P3

IXFP20N50P3
Mfr. #:
IXFP20N50P3
Fabricante:
Littelfuse
Descripción:
MOSFET DISCMSFT NCHHIPERFET-POLAR3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXFP20N50P3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFP20N50P3 DatasheetIXFP20N50P3 Datasheet (P4-P6)
ECAD Model:
Más información:
IXFP20N50P3 más información
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
MOSFET
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
500 V
Id - Corriente de drenaje continua:
20 A
Rds On - Resistencia de la fuente de drenaje:
300 mOhms
Vgs th - Voltaje umbral puerta-fuente:
3 V
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
36 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
380 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
HiPerFET
Tipo de transistor:
1 N-Channel
Marca:
IXYS
Otoño:
9 ns
Tipo de producto:
MOSFET
Hora de levantarse:
5 ns
Cantidad de paquete de fábrica:
50
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
43 ns
Tiempo típico de retardo de encendido:
10 ns
Tags
IXFP20, IXFP2, IXFP, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 500V 8A TO220AB
***S
new, original packaged
***p One Stop
Trans MOSFET N-CH 500V 13A 3-Pin(3+Tab) TO-220FP Tube
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 7.0pF 50volts C0G +/-0.5pF
***ark
Mosfet, N-Ch, 500V, 18.1A, To-220Fp; Transistor Polarity:n Channel; Continuous Drain Current Id:18.1A; Drain Source Voltage Vds:500V; On Resistance Rds(On):0.25Ohm; Rds(On) Test Voltage Vgs:13V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon SCT
500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards, PG-TO220-3, RoHS
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 18 / Drain-Source Voltage (Vds) V = 550 / ON Resistance (Rds(on)) mOhm = 280 / Gate-Source Voltage V = 20 / Fall Time ns = 7.6 / Rise Time ns = 6.4 / Turn-OFF Delay Time ns = 40 / Turn-ON Delay Time ns = 8 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 150 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 30.4
***ineon
500V CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. | Summary of Features: Reduced energy stored in output capacitance (E oss); High body diode ruggedness; Reduced reverse recovery charge (Q rr ); Reduced gate charge (Q g ) | Benefits: Easy control of switching behavior; Better light load efficiency compared to previous CoolMOS generations; Cost attractive alternative compared to standard MOSFETs; Outstanding quality and reliability of CoolMOS technology | Target Applications: Consumer; Lighting; PC silverbox
***icroelectronics
N-channel 500 V, 0.325 Ohm typ., 10 A MDmesh M2 Power MOSFET in a TO-220FP package
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 10A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ure Electronics
STF12N50M2 Series 500 V 0.38 Ohm 10 A N-Ch MDmesh II Plus™ Low Qg Power Mosfet
***ical
Trans MOSFET N-CH 500V 10A 3-Pin(3+Tab) TO-220FP Tube
***ark
MOSFET, N-CH, 500V, 10A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:10A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
***nell
MOSFET, N-CH, 500V, 10A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.325ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 85W; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh II Plus Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)
***ical
Trans MOSFET N-CH 500V 10A 3-Pin(3+Tab) TO-220FP Tube
***ineon
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
***ark
MOSFET, N, TO-220; Transistor Type:Power MOSFET; Transistor Polarity:N; Voltage, Vds Typ:550V; Current, Id Cont:10A; On State Resistance:0.35ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-220; ;RoHS Compliant: Yes
***icroelectronics
N-channel 500 V, 0.325 Ohm typ., 10 A MDmesh M2 Power MOSFET in TO-220 package
***ure Electronics
STP12N50M2: 500V 0.38 Ohm 10A N-Ch. MDmesh II Plus™ Low Qg Power Mosfet-TO-220AB
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 10A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ical
Trans MOSFET N-CH 500V 10A 3-Pin(3+Tab) TO-220AB Tube
***emi
Power MOSFET, N-Channel, QFET®, 400 V, 9.5 A, 270 mΩ, TO-220F
***et Europe
Trans MOSFET N-CH 400V 9.5A 3-Pin(3+Tab) TO-220F Rail
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***i-Key
MOSFET N-CH 400V 8.4A TO-220F
***ser
MOSFETs 400V N-Channel A-FET
***el Nordic
Contact for details
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Parte # Mfg. Descripción Valores Precio
IXFP20N50P3M
DISTI # IXFP20N50P3M-ND		IXYS CorporationMOSFET N-CH 500V 8A TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube		94In Stock
  • 2500:$1.6240
  • 500:$1.9256
  • 100:$2.3780
  • 50:$2.6100
  • 10:$2.9000
  • 1:$3.2500
IXFP20N50P3
DISTI # IXFP20N50P3-ND		IXYS CorporationMOSFET N-CH 500V 8A TO220
RoHS: Compliant
Min Qty: 1
Container: Tube		74In Stock
  • 2500:$1.7640
  • 500:$2.0916
  • 100:$2.5830
  • 50:$2.8350
  • 10:$3.1500
  • 1:$3.5300
IXFP20N50P3M
DISTI # 747-IXFP20N50P3M		IXYS CorporationMOSFET Polar3 HiPerFET Power MOSFET69
  • 1:$3.7300
  • 10:$3.3400
  • 25:$2.9000
  • 50:$2.8400
  • 100:$2.7400
  • 250:$2.3400
  • 500:$2.2200
  • 1000:$1.8700
  • 2500:$1.6000
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Disponibilidad
Valores:
Available
En orden:
3000
Ingrese la cantidad:
El precio actual de IXFP20N50P3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
4,12 US$
4,12 US$
10
3,68 US$
36,80 US$
25
3,20 US$
80,00 US$
50
3,14 US$
157,00 US$
100
3,02 US$
302,00 US$
250
2,58 US$
645,00 US$
500
2,44 US$
1 220,00 US$
1000
2,06 US$
2 060,00 US$
2500
1,77 US$
4 425,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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