SUM90N06-5M5P-E3

SUM90N06-5M5P-E3
Mfr. #:
SUM90N06-5M5P-E3
Fabricante:
Vishay
Descripción:
MOSFET N-CH 60V 90A D2PAK
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SUM90N06-5M5P-E3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SUM90N06-5M5P-E3 DatasheetSUM90N06-5M5P-E3 Datasheet (P4-P6)
ECAD Model:
Atributo del producto
Valor de atributo
Tags
SUM90N06, SUM90N0, SUM90N, SUM9, SUM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) TO-263
*** Electronics
MOSFET, N CH, 60V, 90A, TO263
***nell
MOSFET, N CH, 60V, 90A, TO263; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; On Resistance Rds(on):4.5mohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:90A; Power Dissipation Pd:272W; Voltage Vgs Max:20V
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a Lead Free D2-Pak package, D2PAK-3, RoHS
***ure Electronics
Single N-Channel 60 V 5.1 mOhm 88 nC HEXFET® Power Mosfet - D2PAK
***Yang
Trans MOSFET N-CH 60V 110A 3-Pin D2PAK T/R - Tape and Reel
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 110A I(D), 60V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:110A; On Resistance Rds(On):0.0042Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V Rohs Compliant: Yes
***i-Key
MOSFET N-CH 60V 100A TO-263
***ca Corp
Power Field-Effect Transistor, 100A I(D), 60V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
*** Electronics
OPTLMOS N-CHANNEL POWER MOSFET
***emi
Power MOSFET, P-Channel, -60V, -100A, 5.8mΩ
***ure Electronics
P-Channel 60 V 100 A 5.8 mOhm Surface Mount Power Mosfet - TO-263
***ark
MOSFET, P-CH, -60V, -100A, TO-263; Channel Type:P Channel; Drain Source Voltage Vds:-60V; Continuous Drain Current Id:-100A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:-10V; Gate Source Threshold Voltage Max:-2.6V RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 100A I(D), 60V, 0.009ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, P-CH, -60V, -100A, TO-263; Transistor Polarity: P Channel; Continuous Drain Current Id: -100A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.0044ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -2.6V; Power Dissipation Pd: 90W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***ure Electronics
SQM110N05-06L Series 55 V 110 A Automotive N-Channel Mosfet - TO-263-3
***ical
Trans MOSFET N-CH 55V 110A Automotive 3-Pin(2+Tab) TO-263
***ment14 APAC
MOSFET,N CH,W DIODE,55V,110A,TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:110A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0047ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:157W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263; No. of Pins:3; Operating Temperature Range:-55°C to +175°C; Voltage Vgs Max:20V
***et
Trans MOSFET N-CH 60V 75A 3-Pin(2+Tab) TO-263AB T/R
***ponent Stockers USA
75 A 60 V 0.008 ohm N-CHANNEL Si POWER MOSFET TO-263AB
***ser
MOSFETs 75a, 60V, 0.0075 Ohm Logic Level N-Ch
***S
French Electronic Distributor since 1988
Parte # Mfg. Descripción Valores Precio
SUM90N06-5M5P-E3
DISTI # SUM90N06-5M5P-E3-ND
Vishay SiliconixMOSFET N-CH 60V 90A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)
Limited Supply - Call
    SUM90N06-5M5P-E3
    DISTI # SUM90N06-5M5P-E3
    Vishay IntertechnologiesTrans MOSFET N-CH 60V 90A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: SUM90N06-5M5P-E3)
    RoHS: Compliant
    Min Qty: 800
    Container: Reel
    Americas - 0
    • 8000:$1.9900
    • 3200:$2.0900
    • 4800:$2.0900
    • 1600:$2.1900
    • 800:$2.2900
    SUM90N06-5m5P-E3
    DISTI # 781-SUM90N06-5M5P-E3
    Vishay IntertechnologiesMOSFET 60V 90A 272W 5.5mohm @ 10V
    RoHS: Compliant
    0
      Imagen Parte # Descripción
      SUM90N06-4M4P-E3

      Mfr.#: SUM90N06-4M4P-E3

      OMO.#: OMO-SUM90N06-4M4P-E3

      MOSFET 60V 90A 300W 4.4mohm @ 10V
      SUM90N06-4M4P-E3

      Mfr.#: SUM90N06-4M4P-E3

      OMO.#: OMO-SUM90N06-4M4P-E3-VISHAY

      IGBT Transistors MOSFET 60V 90A 300W 4.4mohm @ 10V
      SUM90N06-4M4P

      Mfr.#: SUM90N06-4M4P

      OMO.#: OMO-SUM90N06-4M4P-1190

      Nuevo y original
      SUM90N06-5M5P

      Mfr.#: SUM90N06-5M5P

      OMO.#: OMO-SUM90N06-5M5P-1190

      Nuevo y original
      SUM90N06-5M5P-E3

      Mfr.#: SUM90N06-5M5P-E3

      OMO.#: OMO-SUM90N06-5M5P-E3-VISHAY

      MOSFET N-CH 60V 90A D2PAK
      Disponibilidad
      Valores:
      Available
      En orden:
      4000
      Ingrese la cantidad:
      El precio actual de SUM90N06-5M5P-E3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      2,98 US$
      2,98 US$
      10
      2,84 US$
      28,36 US$
      100
      2,69 US$
      268,65 US$
      500
      2,54 US$
      1 268,65 US$
      1000
      2,39 US$
      2 388,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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