SI7818DN-T1-E3

Mfr. #:: SI7818DN-T1-E3
Fabricante:: Vishay / Siliconix
Descripción:: MOSFET 150V Vds 20V Vgs PowerPAK 1212-8
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: SI7818DN-T1-E3 Ficha de datos
Entrega:: DHL FedEx Ups TNT EMS
Pago:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Atributo del producto
Valor de atributo

Fabricante:: Vishay

Categoria de producto:: MOSFET

RoHS:: E

Tecnología:: Si

Estilo de montaje:: SMD / SMT

Paquete / Caja:: PowerPAK-1212-8

Nombre comercial:: TrenchFET

Embalaje:: Carrete

Altura:: 1.04 mm

Longitud:: 3.3 mm

Serie:: SI7

Ancho:: 3.3 mm

Marca:: Vishay / Siliconix

Tipo de producto:: MOSFET

Cantidad de paquete de fábrica:: 3000

Subcategoría:: MOSFET

Parte # Alias:: SI7818DN-E3

Tags: SI7818DN-T, SI7818, SI781, SI78, SI7

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI7818DN-T1-E3 Puntajes y reseñas

L***n

super fast and good service, thanks

2019-04-26

R***y

Excellent

2019-07-01

R***l

All ok

2019-03-04

A***e

Excellent chips. I bought 20 in total over time. Tested these. Ok.

2019-02-01

SI7818DN-T1-E3 Descripción

***(Formerly Allied Electronics): SI7818DN-T1-E3 N-channel MOSFET Transistor; 2.2 A; 150 V; 8-Pin PowerPAK 1212

***ure Electronics: Single N-Channel 150 V 0.135 Ohms Surface Mount Power Mosfet - PowerPAK 1212-8

***ark: N CHANNEL MOSFET, 150V, 3.4A, POWERPAK, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:3.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Power Dissipation:1.5W RoHS Compliant: No

***nell: MOSFET, N CH, 150V, 2.2A, POWERPAK 1212; Transistor Polarity:N Channel; Continuous Drain Current Id:2.2A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.112ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:-

***ure Electronics: FDT86244 Series 150 V 128 mOhm N.Ch. SMT PowerTrench Mosfet - SOT-223-3

***emi: N-Channel Power Trench® MOSFET 150V, 2.8A, 128mΩ

***Yang: Trans MOSFET N-CH 150V 2.8A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.

***nell: MOSFET, N CH, 150V, 2.8A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:2.8A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.106ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.1V; Power Dissipation Pd:2.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; No. of Pins:4; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:12A; Voltage Vgs th Max:4V

***emi: N-Channel Shielded Gate Power Trench® MOSFET, 150 V, 2.3 A, 144 mΩ

*** Source Electronics: MOSFET N-CH 150V 2.3A 6SSOT / Trans MOSFET N-CH 150V 2.3A 6-Pin TSOT-23 T/R

***ure Electronics: N-Channel 150 V 2.3 A 144 mOhm SuperSOT-6 Mosfet

*** Stop Electro: Small Signal Field-Effect Transistor, 2.3A I(D), 150V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.

***ure Electronics: FDN86246 Series 150 V 1.6 A 261 mOhm N-Ch PowerTrench Mosfet - SuperSOT-3

***emi: N-Channel PowerTrench® MOSFET 150V 1.6A, 261mΩ

***(Formerly Allied Electronics): Transistor, N-channel, PowerTrench MOSFET, 150V, 1.6A, 261mOhm, SSOT3 | ON Semiconductor FDN86246

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.

***ment14 APAC: MOSFET, N CH, 150V, 1.6A, SSOT-3; Transistor Polarity:N Channel; Continuous Drain Current Id:1.6A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.195ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.4V; Power Dissipation Pd:1.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SuperSOT; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***ure Electronics: N-Channel 150 V 0.085 Ohm 1.5 W Surface Mount Power Mosfet - SOIC-8

***ical: Trans MOSFET N-CH 150V 2.7A 8-Pin SOIC N T/R

***ment14 APAC: N CHANNEL MOSFET, 150V, 2.7A, SOIC-8; Tr; N CHANNEL MOSFET, 150V, 2.7A, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:2.7A; Drain Source Voltage Vds:150V; On Resistance Rds(on):68mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V

***nell: MOSFET, N-CH, 150V, 2.7A, NSOIC; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.7A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.068ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 1.5W; Transistor Case Style: NSOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (12-Jan-2017)

***ure Electronics: Single P-Channel 150 V 295 mOhm 42 nC 52 W SMT Mosfet - PowerPAK ChipFET

*** Source Electronics: Trans MOSFET P-CH 150V 8.9A 8-Pin PowerPAK 1212 T/R / MOSFET P-CH 150V 8.9A 1212-8

***nell: MOSFET, P CH, -150V, -8.9A, POWERPAK; Transistor Polarity:P Channel; Continuous Drain Current Id:-8.9A; Drain Source Voltage Vds:-150V; On Resistance Rds(on):0.245ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:52W; Operating Temperature Min:-50°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:-

***et: Trans MOSFET P-CH 150V 2.3A 8-Pin PowerPAK 1212 T/R

***ark: P-CHANNEL 150-V (D-S) MOSFET ROHS COMPLIANT: NO

***ure Electronics: P-CH POWERPAK 1212-8 150V 295MOHM @ 10V

***ronik: P-CH 150V 9A 300mOhm PwrPAK RoHSconf

Market price

Parte #	Mfg.	Descripción	Valores	Precio
SI7818DN-T1-E3 DISTI # V72:2272_09216388	Vishay Intertechnologies	Trans MOSFET N-CH 150V 2.2A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	2148	1000:$0.6972 500:$0.8637 250:$0.9210 100:$1.0234 25:$1.2319 10:$1.3688 1:$1.8170
SI7818DN-T1-E3 DISTI # V36:1790_09216388	Vishay Intertechnologies	Trans MOSFET N-CH 150V 2.2A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	0	3000000:$0.6545 1500000:$0.6547 300000:$0.6719 30000:$0.7008 3000:$0.7056
SI7818DN-T1-E3 DISTI # SI7818DN-T1-E3CT-ND	Vishay Siliconix	MOSFET N-CH 150V 2.2A 1212-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	15066In Stock	1000:$0.7787 500:$0.9863 100:$1.1940 10:$1.5310 1:$1.7100
SI7818DN-T1-E3 DISTI # SI7818DN-T1-E3DKR-ND	Vishay Siliconix	MOSFET N-CH 150V 2.2A 1212-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	15066In Stock	1000:$0.7787 500:$0.9863 100:$1.1940 10:$1.5310 1:$1.7100
SI7818DN-T1-E3 DISTI # SI7818DN-T1-E3TR-ND	Vishay Siliconix	MOSFET N-CH 150V 2.2A 1212-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	15000In Stock	15000:$0.6451 6000:$0.6703 3000:$0.7056
SI7818DN-T1-E3 DISTI # 31919999	Vishay Intertechnologies	Trans MOSFET N-CH 150V 2.2A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	2148	11:$1.8170
SI7818DN-T1-E3 DISTI # SI7818DN-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 150V 2.2A 8-Pin PowerPAK 1212 T/R (Alt: SI7818DN-T1-E3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 3000	30000:€0.6449 18000:€0.6739 12000:€0.7619 6000:€0.9399 3000:€1.3109
SI7818DN-T1-E3 DISTI # SI7818DN-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 150V 2.2A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7818DN-T1-E3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.6154 18000:$0.6324 12000:$0.6504 6000:$0.6780 3000:$0.6987
SI7818DN-T1-E3 DISTI # 85W3225	Vishay Intertechnologies	N CHANNEL MOSFET, 150V, 3.4A, POWERPAK 1212,Transistor Polarity:N Channel,Continuous Drain Current Id:3.4A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.112ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:4V RoHS Compliant: Yes	0	1000:$0.7270 500:$0.9220 250:$1.0000 100:$1.0800 50:$1.2400 25:$1.4000 1:$1.7000
SI7818DN-T1-E3 DISTI # 51K7000	Vishay Intertechnologies	N CHANNEL MOSFET, 150V, 3.4A, POWERPAK, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:3.4A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.112ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:4VRoHS Compliant: Yes	0	10000:$0.6100 6000:$0.6240 4000:$0.6480 2000:$0.7200 1000:$0.7920 1:$0.8260
SI7818DN-T1-E3. DISTI # 28AC2177	Vishay Intertechnologies	N CHANNEL MOSFET, 150V, 3.4A, POWERPAK, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:3.4A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.112ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:4VRoHS Compliant: No	0	10000:$0.6100 6000:$0.6240 4000:$0.6480 2000:$0.7200 1000:$0.7920 1:$0.8260
SI7818DN-T1-E3 DISTI # 70026281	Vishay Siliconix	SI7818DN-T1-E3 N-channel MOSFET Transistor,2.2 A,150 V,8-Pin PowerPAK 1212 RoHS: Compliant	0	3000:$0.8240 6000:$0.7800 9000:$0.7360
SI7818DN-T1-E3 DISTI # 781-SI7818DN-T1-E3	Vishay Intertechnologies	MOSFET 150V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant	12217	1:$1.6700 10:$1.3800 100:$1.0600 500:$0.9120 1000:$0.7190 3000:$0.6710 6000:$0.6380 9000:$0.6240
SI7818DN-T1-E3 DISTI # 2335378	Vishay Intertechnologies	MOSFET, N CH, 150V, 2.2A, POWERPAK 1212 RoHS: Compliant	0	3000:$1.0700 1000:$1.0900 500:$1.3800 100:$1.6100 10:$2.0900 1:$2.5300
SI7818DN-T1-E3 DISTI # 2459680	Vishay Intertechnologies	N CHANNEL MOSFET, 150V, 3.4A, POWERPAK 1 RoHS: Compliant	0	3000:$1.0700 1000:$1.0900 500:$1.3800 100:$1.6100 10:$2.0900 1:$2.5300
SI7818DN-T1-E3 DISTI # XSKDRABV0050547	Vishay Intertechnologies	RoHS: Compliant	9000 in Stock0 on Order	9000:$0.9013 3000:$0.9657
SI7818DNT1E3	Vishay Siliconix	Power Field-Effect Transistor, 2.2A I(D), 150V, 0.135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	2000
SI7818DN-T1-E3 DISTI # TMOSP9206	Vishay Intertechnologies	N-CH 150V 3A 135mOhm PPAK1212-8 RoHS: Compliant	Stock DE - 0Stock HK - 0Stock US - 0	3000:$0.7083
SI7818DN-T1-E3	Vishay Intertechnologies	MOSFET 150V Vds 20V Vgs PowerPAK 1212-8	Americas - 27000	3000:$0.6720 6000:$0.6280 12000:$0.6050

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Disponibilidad

Valores:: 12
En orden:: 1995
Ingrese la cantidad:

El precio actual de SI7818DN-T1-E3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~1,67 US$~~; ~~1,67 US$~~

10: ~~1,38 US$~~; ~~13,80 US$~~

100: ~~1,06 US$~~; ~~106,00 US$~~

500: ~~0,91 US$~~; ~~456,00 US$~~

1000: ~~0,72 US$~~; ~~719,00 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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