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MMRF2007GNR1

MMRF2007GNR1
Mfr. #:
MMRF2007GNR1
Fabricante:
NXP / Freescale
Descripción:
RF MOSFET Transistors RF LDMOS Wideband Integrated Power Amplifier, 850-940 MHz, 35 W Avg., 28 V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
MMRF2007GNR1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
NXP
Categoria de producto:
Transistores RF MOSFET
Polaridad del transistor:
Canal N dual
Tecnología:
Si
Id - Corriente de drenaje continua:
40 uA, 320 uA
Vds - Voltaje de ruptura de drenaje-fuente:
- 500 mV, 70 V
Ganar:
32.6 dB
Potencia de salida:
35 W
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 150 C
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-270-WBLG-16
Embalaje:
Carrete
Frecuencia de operación:
136 MHz to 940 MHz
Serie:
MMRF2007
Escribe:
RF Power MOSFET
Marca:
NXP / Freescale
Número de canales:
2 Channel
Tipo de producto:
Transistores RF MOSFET
Cantidad de paquete de fábrica:
500
Subcategoría:
MOSFET
Vgs - Voltaje puerta-fuente:
- 0.5 V, 10 V
Vgs th - Voltaje umbral puerta-fuente:
2 V, 2 V
Parte # Alias:
935312376528
Unidad de peso:
0.085451 oz
Tags
MMRF200, MMRF2, MMRF, MMR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***escale Semiconductor
RF LDMOS Wideband Integrated Power Amplifier, 850-940 MHz, 35 W Avg., 28 V
***W
Amplifier,136 to 940 MHz, 79 W, Typ Gain in dB is 32.6 @ 940 MHz, 28 V, LDMOS,
***i-Key
RF LDMOS WIDEBAND INTEGRATED POW
***et
Power Amp 940MHz Dual 16-Pin TO-270WBLG T/R
Parte # Mfg. Descripción Valores Precio
MMRF2007GNR1
DISTI # V36:1790_17079110		NXP SemiconductorsRF & MW POWER AMPLIFIER0
  • 500000:$61.9000
  • 250000:$61.9100
  • 50000:$63.5100
  • 5000:$67.2400
  • 500:$67.9200
MMRF2007GNR1
DISTI # MMRF2007GNR1-ND		NXP SemiconductorsRF LDMOS WIDEBAND INTEGRATED POW
RoHS: Compliant
Min Qty: 500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 500:$67.9247
MMRF2007GNR1
DISTI # MMRF2007GNR1		Avnet, Inc.Power Amp 940MHz Dual 16-Pin TO-270WBLG T/R - Tape and Reel (Alt: MMRF2007GNR1)
RoHS: Compliant
Min Qty: 500
Container: Reel		Americas - 0
  • 5000:$64.8900
  • 3000:$66.1900
  • 2000:$68.6900
  • 1000:$71.4900
  • 500:$74.3900
MMRF2007GNR1
DISTI # 841-MMRF2007GNR1		NXP SemiconductorsRF MOSFET Transistors MMRF2007GN/FM16///REEL 13 Q2 DP0
    MMRF2007GNR1
    DISTI # MMRF2007GNR1    		NXP SemiconductorsRF & MW POWER AMPLIFIER
    RoHS: Compliant    		0
    • 500:$76.6000
    Imagen Parte # Descripción
    MMRF2004NBR1

    Mfr.#: MMRF2004NBR1

    OMO.#: OMO-MMRF2004NBR1

    		 RF Amplifier 2500-2700 MHz 4 W Avg. 28 V
    MMRF2010NR1

    Mfr.#: MMRF2010NR1

    OMO.#: OMO-MMRF2010NR1

    		 RF MOSFET Transistors Airfast RF LDMOS Integrated Power Amplifier, 1030-1090 MHz, 250 W Peak, 50 V
    MMRF2010GNR1

    Mfr.#: MMRF2010GNR1

    OMO.#: OMO-MMRF2010GNR1

    		 RF MOSFET Transistors Airfast RF LDMOS Integrated Power Amplifier, 1030-1090 MHz, 250 W Peak, 50 V
    MMRF2005NR1

    Mfr.#: MMRF2005NR1

    OMO.#: OMO-MMRF2005NR1

    		 RF Amplifier Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 728-768 MHz, 920-960 MHz, 3.2 W, 28 V
    MMRF2007GNR1

    Mfr.#: MMRF2007GNR1

    OMO.#: OMO-MMRF2007GNR1

    		 RF MOSFET Transistors RF LDMOS Wideband Integrated Power Amplifier, 850-940 MHz, 35 W Avg., 28 V
    MMRF2011NT1

    Mfr.#: MMRF2011NT1

    OMO.#: OMO-MMRF2011NT1-NXP-SEMICONDUCTORS

    		 SINGLE W-CDMA RF LDMOS WIDEBAND
    MMRF2007GNR1

    Mfr.#: MMRF2007GNR1

    OMO.#: OMO-MMRF2007GNR1-NXP-SEMICONDUCTORS

    		 RF LDMOS WIDEBAND INTEGRATED POW
    MMRF2006NT1

    Mfr.#: MMRF2006NT1

    OMO.#: OMO-MMRF2006NT1-NXP-SEMICONDUCTORS

    		 RF Amplifier 1805-2170 MHz 2.4W Avg. 28 V
    MMRF2004NBR1

    Mfr.#: MMRF2004NBR1

    OMO.#: OMO-MMRF2004NBR1-NXP-SEMICONDUCTORS

    		 RF Amplifier 2500-2700 MHz 4 W Avg. 28 V
    MMRF2007NR1

    Mfr.#: MMRF2007NR1

    OMO.#: OMO-MMRF2007NR1-NXP-SEMICONDUCTORS

    		 RF MOSFET Transistors RF LDMOS Wideband Integrated Power Amplifier, 850-940 MHz, 35 W Avg., 28 V
    Disponibilidad
    Valores:
    Available
    En orden:
    4500
    Ingrese la cantidad:
    El precio actual de MMRF2007GNR1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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