OMO ElectronicOMO Electronic
Expand menu
Hola, regístrateMi cuenta
0 Carro

SI2399DS-T1-GE3

SI2399DS-T1-GE3
Mfr. #:
SI2399DS-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET -20V Vds 12V Vgs SOT-23
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI2399DS-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI2399DS-T1-GE3 DatasheetSI2399DS-T1-GE3 Datasheet (P4-P6)SI2399DS-T1-GE3 Datasheet (P7-P9)SI2399DS-T1-GE3 Datasheet (P10)
ECAD Model:
Más información:
SI2399DS-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SOT-23-3
Número de canales:
1 Channel
Polaridad del transistor:
P-Channel
Vds - Voltaje de ruptura de drenaje-fuente:
20 V
Id - Corriente de drenaje continua:
6 A
Rds On - Resistencia de la fuente de drenaje:
34 mOhms
Vgs th - Voltaje umbral puerta-fuente:
600 mV
Vgs - Voltaje puerta-fuente:
10 V
Qg - Carga de puerta:
10 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
2.5 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Serie:
SI2
Tipo de transistor:
1 P-Channel
Marca:
Vishay / Siliconix
Transconductancia directa - Mín .:
15 S
Otoño:
9 ns
Tipo de producto:
MOSFET
Hora de levantarse:
20 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
28 ns
Tiempo típico de retardo de encendido:
22 ns
Unidad de peso:
0.000282 oz
Tags
SI2399, SI239, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***roFlash
MOSFET, P CH, W/D, 20V, 6A, SOT23; Transistor Polarity: P Channel; Continuous Dra
***et
Trans MOSFET P-CH 20V 5.1A 3-Pin SOT-23 T/R
***mal
P-Ch MOSFET SOT-23 20V 45mohm @ 4.5V
***ure Electronics
20V, 6A, 34MOHM, P-CHANNEL, SOT-23
***nell
MOSFET, P CH, W/D, 20V, 6A, SOT23; Transistor Polarity:P Channel; Continuous Drain Current Id:-6A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.028ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:2.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-236; No. of Pins:3; MSL:-; Operating Temperature Range:-55°C to +150°C
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Parte # Mfg. Descripción Valores Precio
SI2399DS-T1-GE3
DISTI # V72:2272_09216821		Vishay IntertechnologiesTrans MOSFET P-CH 20V 5.1A 3-Pin SOT-23 T/R
RoHS: Compliant		1304
  • 1000:$0.1802
  • 500:$0.2381
  • 250:$0.2799
  • 100:$0.2919
  • 25:$0.3885
  • 10:$0.4317
  • 1:$0.5626
SI2399DS-T1-GE3
DISTI # V36:1790_09216821		Vishay IntertechnologiesTrans MOSFET P-CH 20V 5.1A 3-Pin SOT-23 T/R
RoHS: Compliant		0
  • 3000000:$0.1500
  • 1500000:$0.1502
  • 300000:$0.1605
  • 30000:$0.1765
  • 3000:$0.1790
SI2399DS-T1-GE3
DISTI # SI2399DS-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CH 20V 6A SOT-23
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2382In Stock
  • 1000:$0.2022
  • 500:$0.2617
  • 100:$0.3331
  • 10:$0.4460
  • 1:$0.5200
SI2399DS-T1-GE3
DISTI # SI2399DS-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CH 20V 6A SOT-23
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2382In Stock
  • 1000:$0.2022
  • 500:$0.2617
  • 100:$0.3331
  • 10:$0.4460
  • 1:$0.5200
SI2399DS-T1-GE3
DISTI # SI2399DS-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 20V 6A SOT-23
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 30000:$0.1478
  • 15000:$0.1559
  • 6000:$0.1675
  • 3000:$0.1790
SI2399DS-T1-GE3
DISTI # 33138233		Vishay IntertechnologiesTrans MOSFET P-CH 20V 5.1A 3-Pin SOT-23 T/R
RoHS: Compliant		3000
  • 3000:$0.1688
SI2399DS-T1-GE3
DISTI # 32404567		Vishay IntertechnologiesTrans MOSFET P-CH 20V 5.1A 3-Pin SOT-23 T/R
RoHS: Compliant		1304
  • 46:$0.5626
SI2399DS-T1-GE3
DISTI # SI2399DS-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 20V 5.1A 3-Pin SOT-23 T/R (Alt: SI2399DS-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€0.1379
  • 18000:€0.1489
  • 12000:€0.1609
  • 6000:€0.1869
  • 3000:€0.2749
SI2399DS-T1-GE3
DISTI # SI2399DS-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 20V 5.1A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2399DS-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
    SI2399DS-T1-GE3
    DISTI # SI2399DS-T1-GE3    		Vishay IntertechnologiesTrans MOSFET P-CH 20V 5.1A 3-Pin SOT-23 T/R (Alt: SI2399DS-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Asia - 0
      SI2399DS-T1-GE3
      DISTI # 64T4058      		Vishay IntertechnologiesTrans MOSFET P-CH 20V 5.1A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt: 64T4058)
      RoHS: Not Compliant
      Min Qty: 1
      Container: Ammo Pack      		Americas - 0
      • 500:$0.2800
      • 250:$0.3060
      • 100:$0.3310
      • 50:$0.3650
      • 25:$0.4000
      • 10:$0.4340
      • 1:$0.5650
      SI2399DS-T1-GE3
      DISTI # 99W9608      		Vishay IntertechnologiesMOSFET Transistor, P Channel, -6 A, -20 V, 0.028 ohm, -10 V, -600 mV0
      • 50000:$0.1420
      • 30000:$0.1490
      • 20000:$0.1600
      • 10000:$0.1710
      • 5000:$0.1850
      • 1:$0.1900
      SI2399DS-T1-GE3
      DISTI # 64T4058      		Vishay IntertechnologiesMOSFET, P CHANNEL, -20V, -6A, SOT-23-3,Transistor Polarity:P Channel,Continuous Drain Current Id:-6A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.028ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-600mV RoHS Compliant: Yes9214
      • 1000:$0.2160
      • 500:$0.2690
      • 250:$0.2930
      • 100:$0.3180
      • 50:$0.3510
      • 25:$0.3840
      • 10:$0.4160
      • 1:$0.5420
      SI2399DS-T1-GE3
      DISTI # 78-SI2399DS-T1-GE3      		Vishay IntertechnologiesMOSFET -20V Vds 12V Vgs SOT-23
      RoHS: Compliant      		18872
      • 1:$0.5200
      • 10:$0.3970
      • 100:$0.2940
      • 500:$0.2420
      • 1000:$0.1870
      • 3000:$0.1700
      • 6000:$0.1590
      • 9000:$0.1480
      SI2399DS-T1-GE3
      DISTI # 1807277      		Vishay IntertechnologiesP-CH MOSFET SOT-23 20V 45MOHM @ 4.5V, RL2960
      • 3000:£0.1450
      SI2399DS-T1-GE3
      DISTI # 2056681      		Vishay IntertechnologiesMOSFET, P CH, W/D, 20V, 6A, SOT239983
      • 500:£0.1890
      • 250:£0.2100
      • 100:£0.2300
      • 10:£0.3470
      • 1:£0.4730
      SI2399DS-T1-GE3
      DISTI # 2056681RL      		Vishay IntertechnologiesMOSFET, P CH, W/D, 20V, 6A, SOT23
      RoHS: Compliant      		0
      • 500:$0.3660
      • 100:$0.4450
      • 10:$0.6000
      • 1:$0.7990
      SI2399DS-T1-GE3
      DISTI # 2056681      		Vishay IntertechnologiesMOSFET, P CH, W/D, 20V, 6A, SOT23
      RoHS: Compliant      		9214
      • 500:$0.3660
      • 100:$0.4450
      • 10:$0.6000
      • 1:$0.7990
      SI2399DS-T1-GE3
      DISTI # C1S806001187986      		Vishay IntertechnologiesTrans MOSFET P-CH 20V 5.1A 3-Pin SOT-23 T/R
      RoHS: Compliant      		1
      • 1:$0.5190
      Imagen Parte # Descripción
      TLV333IDBVR

      Mfr.#: TLV333IDBVR

      OMO.#: OMO-TLV333IDBVR

      		 Operational Amplifiers - Op Amps OPAMP
      TLV8812DGKR

      Mfr.#: TLV8812DGKR

      OMO.#: OMO-TLV8812DGKR

      		 Precision Amplifiers 425 nA Precision Nanopower Operational Amplifier for Cost-Optimized Systems (Dual) 8-VSSOP -40 to 125
      TPS22860DBVR

      Mfr.#: TPS22860DBVR

      OMO.#: OMO-TPS22860DBVR

      		 Power Switch ICs - Power Distribution Rebrand from TS5A3160
      TPS62745DSSR

      Mfr.#: TPS62745DSSR

      OMO.#: OMO-TPS62745DSSR

      		 Switching Voltage Regulators Buck Converter
      MP3410DJ-LF-P

      Mfr.#: MP3410DJ-LF-P

      OMO.#: OMO-MP3410DJ-LF-P

      		 Switching Voltage Regulators 1.5A 1.8-6V 500kHz Synchronous Step-Up
      ENS210-LQFM

      Mfr.#: ENS210-LQFM

      OMO.#: OMO-ENS210-LQFM

      		 Board Mount Humidity Sensors ENS210-LQFM MLF4 LF T&R
      CC3200MODR1M2AMOBR

      Mfr.#: CC3200MODR1M2AMOBR

      OMO.#: OMO-CC3200MODR1M2AMOBR

      		 WiFi Modules (802.11) CC3200 Modules
      TAJC476K016SNJ

      Mfr.#: TAJC476K016SNJ

      OMO.#: OMO-TAJC476K016SNJ

      		 Tantalum Capacitors - Solid SMD 16V 47uF 10% 2312 ESR= 500 mOhms
      CC3200MODR1M2AMOBR

      Mfr.#: CC3200MODR1M2AMOBR

      OMO.#: OMO-CC3200MODR1M2AMOBR-TEXAS-INSTRUMENTS

      		 IC RF TXRX+MCU WIFI 63SMD
      TLV333IDBVR

      Mfr.#: TLV333IDBVR

      OMO.#: OMO-TLV333IDBVR-TEXAS-INSTRUMENTS

      		 Operational Amplifiers - Op Amps Low Power Stereo DAC A 595-TLV320DAC32IRHBT
      Disponibilidad
      Valores:
      18
      En orden:
      2001
      Ingrese la cantidad:
      El precio actual de SI2399DS-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,52 US$
      0,52 US$
      10
      0,40 US$
      3,97 US$
      100
      0,29 US$
      29,40 US$
      500
      0,24 US$
      121,00 US$
      1000
      0,19 US$
      187,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
      Empezar con
      Nuevos productos
      • -12 V and -20 V P-Channel Gen III MOSFETs
        -12 V and -20 V P-Channel Gen III MOSFETs
        Vishay's TrenchFET® MOSFETs features low on-resistance for -12 V and -20 V devices, allowing for lower voltage drops.
      • DG2788A Dual DPDT / Quad SPDT Analog Switch
        DG2788A Dual DPDT / Quad SPDT Analog Switch
        Vishay introduces the dual DPDT / quad SPDT analog switch featuring low resistance of 0.37 Ω at 2.7 V in the compact 2.6 mm x 1.8 mm x 0.55 mm miniQFN16 package.
      • Compare SI2399DS-T1-GE3
        Compare SI2399DS-T1-GE3
        SI2399CDST1GE3 vs SI2399DST1E3 vs SI2399DST1GE3
      • Smart Load Switches
        Smart Load Switches
        Vishay's smart load switch features a simplified GPIO control can be used to implement power distribution and sequencing of multiple-sub-systems.
      • SUM70101EL 100 V P-Channel MOSFET
        SUM70101EL 100 V P-Channel MOSFET
        Vishay Siliconix's SUM70101EL MOSFET has industry leading RDS(ON) (0.0101 Ω at -10 V and 0.015 Ω at -4.5 V) minimizes conduction loss and increases efficiency.
      • DGQ2788A AEC-Q100 Qualified Analog Switch
        DGQ2788A AEC-Q100 Qualified Analog Switch
        The wide operation voltage range, low resistance, and high bandwidth of Vishay Siliconix's DGQ2788A make it ideal for a variety of design needs, simplifying the BOM.
      More Newest Products
      Top