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SIDR610DP-T1-GE3

SIDR610DP-T1-GE3
Mfr. #:
SIDR610DP-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 200V Vds -/+20V Vgs PowerPAK SO-8DC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIDR610DP-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIDR610DP-T1-GE3 DatasheetSIDR610DP-T1-GE3 Datasheet (P4-P6)SIDR610DP-T1-GE3 Datasheet (P7-P8)
ECAD Model:
Más información:
SIDR610DP-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PowerPAK-SO-8DC-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
200 V
Id - Corriente de drenaje continua:
39.6 A
Rds On - Resistencia de la fuente de drenaje:
31.9 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
38 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
125 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Serie:
SID
Marca:
Vishay / Siliconix
Transconductancia directa - Mín .:
27 S
Otoño:
24 ns
Tipo de producto:
MOSFET
Hora de levantarse:
20 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
20 ns
Tiempo típico de retardo de encendido:
9 ns
Tags
SIDR6, SIDR, SID
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
TrenchFET® Gen IV Top-Side Double Cooling MOSFETs
Vishay TrenchFET® Gen IV Top-Side Double Cooling MOSFETs feature top-side cooling and offer an additional venue for thermal transfer. These MOSFETs come in the PowerPAK® SO-8DC package. The TrenchFET double cooling MOSFETs offer variants with different drain-source breakdown voltages of 25V, 30V, 40V, 60V, 80V, 100V, 150V, and 200V. These N-channel MOSFETs operate at a temperature range from -55°C to 150°C. The TrenchFET MOSFETs can be utilized for product-specific applications including synchronous rectification, DC/DC conversion, power supplies, battery management, and others.
Parte # Mfg. Descripción Valores Precio
SIDR610DP-T1-GE3
DISTI # V99:2348_22587802		Vishay IntertechnologiesN-Channel 200 V (D-S) MOSFET0
    SIDR610DP-T1-GE3
    DISTI # SIDR610DP-T1-GE3CT-ND    		Vishay SiliconixMOSFET N-CHAN 200V PPAK SO-8DC
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		55In Stock
    • 1000:$1.8601
    • 500:$2.2055
    • 100:$2.5908
    • 10:$3.1620
    • 1:$3.5200
    SIDR610DP-T1-GE3
    DISTI # SIDR610DP-T1-GE3DKR-ND    		Vishay SiliconixMOSFET N-CHAN 200V PPAK SO-8DC
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		55In Stock
    • 1000:$1.8601
    • 500:$2.2055
    • 100:$2.5908
    • 10:$3.1620
    • 1:$3.5200
    SIDR610DP-T1-GE3
    DISTI # SIDR610DP-T1-GE3TR-ND    		Vishay SiliconixMOSFET N-CHAN 200V PPAK SO-8DC
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		On Order
    • 3000:$1.7199
    SIDR610DP-T1-GE3
    DISTI # SIDR610DP-T1-GE3    		Vishay IntertechnologiesN-CHANNEL 200-V (D-S) MOSFET - Tape and Reel (Alt: SIDR610DP-T1-GE3)
    RoHS: Compliant
    Min Qty: 6000
    Container: Reel    		Americas - 0
    • 60000:$1.4900
    • 18000:$1.5900
    • 30000:$1.5900
    • 6000:$1.6900
    • 12000:$1.6900
    SIDR610DP-T1-GE3
    DISTI # 99AC0534    		Vishay IntertechnologiesMOSFET, N-CH, 200V, 39.6A, 125W,Transistor Polarity:N Channel,Continuous Drain Current Id:39.6A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.0239ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes0
    • 500:$2.0600
    • 250:$2.3000
    • 100:$2.3700
    • 50:$2.5500
    • 25:$2.7200
    • 10:$2.8900
    • 1:$3.4800
    SIDR610DP-T1-GE3
    DISTI # 81AC3429    		Vishay IntertechnologiesN-CHANNEL 200-V (D-S) MOSFET0
    • 20000:$1.5200
    • 12000:$1.5400
    • 8000:$1.6000
    • 4000:$1.7200
    • 2000:$1.8500
    • 1:$1.9300
    SIDR610DP-T1-GE3
    DISTI # 78-SIDR610DP-T1-GE3    		Vishay IntertechnologiesMOSFET 200V Vds -/+20V Vgs PowerPAK SO-8DC
    RoHS: Compliant    		5934
    • 1:$3.4500
    • 10:$2.8600
    • 100:$2.3500
    • 250:$2.2800
    • 500:$2.0400
    • 1000:$1.7200
    • 3000:$1.6400
    SIDR610DP-T1-GE3
    DISTI # 3014141    		Vishay IntertechnologiesMOSFET, N-CH, 200V, 39.6A, 125W0
    • 500:£1.4900
    • 250:£1.6700
    • 100:£1.7200
    • 10:£2.0900
    • 1:£2.8400
    SIDR610DP-T1-GE3
    DISTI # 3014141    		Vishay IntertechnologiesMOSFET, N-CH, 200V, 39.6A, 125W
    RoHS: Compliant    		0
    • 1000:$2.2800
    • 500:$2.5000
    • 250:$2.7600
    • 100:$2.9800
    • 10:$3.7400
    • 1:$4.8200
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    Disponibilidad
    Valores:
    Available
    En orden:
    1988
    Ingrese la cantidad:
    El precio actual de SIDR610DP-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    3,45 US$
    3,45 US$
    10
    2,86 US$
    28,60 US$
    100
    2,35 US$
    235,00 US$
    250
    2,28 US$
    570,00 US$
    500
    2,04 US$
    1 020,00 US$
    1000
    1,72 US$
    1 720,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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