IPA60R400CEXKSA1

IPA60R400CEXKSA1
Mfr. #:
IPA60R400CEXKSA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-CH 600V TO-220-3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPA60R400CEXKSA1 Ficha de datos
Entrega:
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Más información:
IPA60R400CEXKSA1 más información
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
embalaje
Tubo
Alias ​​de parte
IPA60R400CE SP001276040
Unidad de peso
0.211644 oz
Nombre comercial
CoolMOS
Paquete-Estuche
TO-220-3
Tecnología
Si
Número de canales
1 Channel
Tipo transistor
1 N-Channel
Disipación de potencia Pd
31 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 40 C
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
10.3 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Vgs-th-Gate-Source-Threshold-Voltage
3 V
Resistencia a la fuente de desagüe de Rds
400 mOhms
Polaridad del transistor
Canal N
Qg-Gate-Charge
32 nC
Tags
IPA60R40, IPA60R4, IPA60R, IPA60, IPA6, IPA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 400 mOhm 32 nC CoolMOS™ Power Mosfet - TO-220-3FP
***ark
Mosfet, N-Ch, 600V, 14.7A, To-220Fp; Transistor Polarity:n Channel; Continuous Drain Current Id:14.7A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.34Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
CoolMOS CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets. | Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ CE Power MOSFETs
Infineon's CoolMOS™ CE Power MOSFETs are a technology platform of high voltage power MOSFETs that are designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. CoolMOS™ CE portfolio offers 500V, 600V, 650V, 700V, and 800V devices targeting low power chargers for mobile devices and power tools, adapters for notebook and laptops, LCD, LED TV and LED lighting. This new series of CoolMOS™ is cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still being price attractive.
CoolMOS CE Power MOSFETs - 600-650V
Infineon 600V/650V CoolMOS™ CE N-Channel Power MOSFETs are a technology platform of Infineon's market leading high voltage power MOSFET designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. These 600V/650V CoolMOS™ MOSFETs are cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still been price attractive. These devices target low power chargers for mobile devices and power tools, LCD, LED TV and LED lighting applications.
Parte # Mfg. Descripción Valores Precio
IPA60R400CEXKSA1
DISTI # V99:2348_06383819
Infineon Technologies AGTrans MOSFET N-CH 600V 10.3A 3-Pin(3+Tab) TO-220FP Tube
RoHS: Compliant
28
  • 500:$0.6620
  • 100:$0.7395
  • 10:$0.9265
  • 1:$1.0517
IPA60R400CEXKSA1
DISTI # IPA60R400CEXKSA1-ND
Infineon Technologies AGMOSFET N-CH 600V TO-220-3
RoHS: Compliant
Min Qty: 1
Container: Tube
202In Stock
  • 1000:$0.6367
  • 500:$0.8065
  • 100:$1.0400
  • 10:$1.3160
  • 1:$1.4900
IPA60R400CEXKSA1
DISTI # 27537288
Infineon Technologies AGTrans MOSFET N-CH 600V 10.3A 3-Pin(3+Tab) TO-220FP Tube
RoHS: Compliant
28
  • 12:$0.9246
IPA60R400CEXKSA1
DISTI # IPA60R400CE
Infineon Technologies AGTrans MOSFET N-CH 650V 10.3A 3-Pin TO-220 Tube (Alt: IPA60R400CE)
RoHS: Compliant
Min Qty: 500
Container: Tube
Asia - 2500
  • 500:$0.6432
  • 1000:$0.6224
  • 1500:$0.6030
  • 2500:$0.5847
  • 5000:$0.5760
  • 12500:$0.5675
  • 25000:$0.5593
IPA60R400CEXKSA1
DISTI # IPA60R400CEXKSA1
Infineon Technologies AGTrans MOSFET N-CH 650V 10.3A 3-Pin TO-220 Tube - Rail/Tube (Alt: IPA60R400CEXKSA1)
RoHS: Compliant
Min Qty: 1000
Container: Tube
Americas - 0
  • 1000:$0.5559
  • 2000:$0.5349
  • 3000:$0.5159
  • 5000:$0.4989
  • 10000:$0.4899
IPA60R400CEXKSA1
DISTI # 726-IPA60R400CEXKSA1
Infineon Technologies AGMOSFET N-Ch 600V 10.3A TO220FP-3
RoHS: Compliant
20
  • 1:$1.2700
  • 10:$1.0900
  • 100:$0.8300
  • 500:$0.7340
IPA60R400CEXKSA1
DISTI # 1338579
Infineon Technologies AGMOSFET COOLMOS CE N-CH 600V 14A TO-220FP, TU495
  • 500:£0.4970
  • 2500:£0.4870
  • 5000:£0.4770
IPA60R400CEXKSA1
DISTI # C1S322000522954
Infineon Technologies AGTrans MOSFET N-CH 600V 10.3A 3-Pin(3+Tab) TO-220FP Tube
RoHS: Compliant
28
  • 10:$0.9246
IPA60R400CEXKSA1
DISTI # 2709884
Infineon Technologies AGMOSFET, N-CH, 600V, 14.7A, TO-220FP
RoHS: Compliant
69
  • 5:£0.9060
  • 25:£0.7180
  • 100:£0.5500
  • 250:£0.5240
  • 500:£0.4970
IPA60R400CEXKSA1
DISTI # 2709884
Infineon Technologies AGMOSFET, N-CH, 600V, 14.7A, TO-220FP
RoHS: Compliant
0
  • 1:$2.3800
  • 10:$2.1000
  • 100:$1.6600
  • 500:$1.2900
  • 1000:$1.0200
Imagen Parte # Descripción
IPA60R400CEXKSA1

Mfr.#: IPA60R400CEXKSA1

OMO.#: OMO-IPA60R400CEXKSA1

MOSFET N-Ch 600V 10.3A TO220FP-3
IPA60R400CE

Mfr.#: IPA60R400CE

OMO.#: OMO-IPA60R400CE-1190

600V CoolMOS CE Power Transisto
IPA60R400CE , 2SD1805F-T

Mfr.#: IPA60R400CE , 2SD1805F-T

OMO.#: OMO-IPA60R400CE-2SD1805F-T-1190

Nuevo y original
IPA60R400CEXKSA1

Mfr.#: IPA60R400CEXKSA1

OMO.#: OMO-IPA60R400CEXKSA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 600V TO-220-3
IPA60R400CEXKSA1 , 2SD18

Mfr.#: IPA60R400CEXKSA1 , 2SD18

OMO.#: OMO-IPA60R400CEXKSA1-2SD18-1190

Nuevo y original
Disponibilidad
Valores:
Available
En orden:
2000
Ingrese la cantidad:
El precio actual de IPA60R400CEXKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,73 US$
0,73 US$
10
0,70 US$
6,98 US$
100
0,66 US$
66,14 US$
500
0,62 US$
312,30 US$
1000
0,59 US$
587,90 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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