IXFH80N20Q

Mfr. #:: IXFH80N20Q
Fabricante:: IXYS
Descripción:: MOSFET 200V 80A
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: IXFH80N20Q Ficha de datos
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HTML Datasheet:: IXFH80N20Q Datasheet
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Fabricante: IXYS

categoria de producto: FET - Single

Tags: IXFH80, IXFH8, IXFH, IXF

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We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IXFH80N20Q Descripción

***ical: Trans MOSFET N-CH Si 200V 80A 3-Pin(3+Tab) TO-247AD

***el Nordic: Contact for details

***icroelectronics: N-channel 200 V, 0.019 Ω, 83 A, TO-247 low gate charge STripFET™2; Power MOSFET

***ical: Trans MOSFET N-CH 200V 83A 3-Pin(3+Tab) TO-247 Tube

***r Electronics: Power Field-Effect Transistor, 83A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET, TO-247AD

*** Electronic Components: MOSFET N-channel 200V, 83A STripFET Mosfet

***el Electronic: CAP CER 0.068UF 630V X7R RADIAL

***trelec: MOSFET Operating temperature: -40...175 °C Housing type: TO-247 Power dissipation: 330 W

***ure Electronics: Single N-Channel 200 V 25 mOhm 70 nC HEXFET® Power Mosfet - TO-247AC

*** Source Electronics: Trans MOSFET N-CH 200V 65A 3-Pin(3+Tab) TO-247AC Tube / MOSFET N-CH 200V 65A TO-247AC

*** Stop Electro: Power Field-Effect Transistor, 65A I(D), 200V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

***ment14 APAC: MOSFET, N, 200V, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:200V; On Resistance Rds(on):25mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:330W; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 100°C:46A; Cont Current Id @ 25°C:65A; Current Id Max:65A; Package / Case:TO-247; Power Dissipation Pd:330W; Power Dissipation Pd:330W; Pulse Current Idm:260A; Rth:0.45; Termination Type:Through Hole; Voltage Vds:200V; Voltage Vds Typ:240V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.04Ohm;ID 50A;TO-247AC;PD 300W;VGS +/-20V

***itex: Transistor: N-MOSFET; unipolar; 200V; 50A; 0.04ohm; 300W; -55+175 deg.C; THT; TO247AC

***ure Electronics: Single N-Channel 200V 0.04 Ohm 234 nC HEXFET® Power Mosfet - TO-247AC

***fin: Transistor NPN Mos IRFP260/IRFP260N INTERNATIONAL RECTIFIER Ampere=50 V=200 TO247

***ineon SCT: 200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 50A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

***ment14 APAC: MOSFET, N, 200V, 49A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:200V; On Resistance Rds(on):40mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:300W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Junction to Case Thermal Resistance A:0.5°C/W; Package / Case:TO-247AC; Power Dissipation Pd:300W; Power Dissipation Pd:300W; Pulse Current Idm:200A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.023Ohm;ID 94A;TO-247AC;PD 580W;VGS +/-30V

***itex: Transistor: N-MOSFET; unipolar; 200V; 94A; 0.023ohm; 580W; -55+175 deg.C; THT; TO247AC

***eco: Transistor MOSFET N Channel 200 Volt 94 Amp 3-Pin 3+ Tab TO-247AC

***trelec: MOSFET Operating temperature: -55...+175 °C Housing type: TO-247 Power dissipation: 580 W

***ure Electronics: Single N-Channel 200 V 0.023 Ohm 270 nC HEXFET® Power Mosfet - TO-247AC

***ineon SCT: 200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS

***ment14 APAC: MOSFET, N, 200V, 94A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:94A; Drain Source Voltage Vds:200V; On Resistance Rds(on):23mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:580W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:94A; Junction to Case Thermal Resistance A:0.26°C/W; On State resistance @ Vgs = 10V:23mohm; Package / Case:TO-247AC; Power Dissipation Pd:580W; Power Dissipation Pd:580W; Pulse Current Idm:380A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design

***ure Electronics: Single N-Channel 200 V 0.055 Ohms Flange Mount Power Mosfet - TO-247AC

***ser: Single-Gate MOSFET Transistors N-Chan 200V 46 Amp

***ical: Trans MOSFET N-CH 200V 46A 3-Pin (3+Tab) TO-247AC

***(Formerly Allied Electronics): Pwr MOSFET, 200V Single N-Ch. HEXFET; TO-247AC

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:46A; On Resistance, Rds(on):550mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-247AC ;RoHS Compliant: Yes

***ure Electronics: Single N-Channel 250 V 0.075 Ohms Flange Mount Power Mosfet - TO-247AC

*** Source Electronics: Trans MOSFET N-CH 250V 38A 3-Pin(3+Tab) TO-247AC / MOSFET N-CH 250V 38A TO-247AC

*** Stop Electro: Power Field-Effect Transistor, 38A I(D), 250V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

***nell: MOSFET, N, 250V, 38A, TO-247AC; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:250V; Current, Id Cont:38A; Resistance, Rds On:0.075ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-247AC; Termination Type:Through Hole; Current, Idm Pulse:150A; Lead Spacing:5.45mm; No. of Pins:3; Power Dissipation:280W; Power, Pd:280W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:0.45°C/W; Transistors, No. of:1; Voltage, Vds Max:250V

Market price

Parte #	Mfg.	Descripción	Valores	Precio
IXFH80N20Q DISTI # IXFH80N20Q-ND	IXYS Corporation	MOSFET N-CH 200V 80A TO-247AD RoHS: Compliant Min Qty: 30 Container: Tube	Limited Supply - Call
IXFH80N20Q	IXYS Corporation	* FREE SHIPPING ORDERS OVER $100 *	34	22:$22.0817 11:$23.3084 1:$24.5352

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Disponibilidad

Valores:: Available
En orden:: 2500
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El precio actual de IXFH80N20Q es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~33,12 US$~~; ~~33,12 US$~~

10: ~~31,47 US$~~; ~~314,66 US$~~

100: ~~29,81 US$~~; ~~2 981,03 US$~~

500: ~~28,15 US$~~; ~~14 077,10 US$~~

1000: ~~26,50 US$~~; ~~26 498,00 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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IXFH80N20Q

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes