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IXFH36N60P

IXFH36N60P
Mfr. #:
IXFH36N60P
Fabricante:
Littelfuse
Descripción:
MOSFET 600V 36A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXFH36N60P Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFH36N60P DatasheetIXFH36N60P Datasheet (P4)
ECAD Model:
Más información:
IXFH36N60P más información
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-247-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
36 A
Rds On - Resistencia de la fuente de drenaje:
190 mOhms
Vgs - Voltaje puerta-fuente:
30 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
650 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
HiPerFET
Embalaje:
Tubo
Altura:
21.46 mm
Longitud:
16.26 mm
Serie:
IXFH36N60
Tipo de transistor:
1 N-Channel
Ancho:
5.3 mm
Marca:
IXYS
Transconductancia directa - Mín .:
39 S
Otoño:
22 ns
Tipo de producto:
MOSFET
Hora de levantarse:
25 ns
Cantidad de paquete de fábrica:
30
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
80 ns
Tiempo típico de retardo de encendido:
30 ns
Unidad de peso:
0.229281 oz
Tags
IXFH36, IXFH3, IXFH, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 600 V 36 A 190 mO PolarHT hiPerFET Power Mosfet - TO-247
***ical
Trans MOSFET N-CH 600V 36A 3-Pin(3+Tab) TO-247AD
***ukat
N-Ch 600V 36A 650W 0,19R TO247AD
***ark
Mosfet, N, To-247; Transistor Polarity:n Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:36A; On Resistance Rds(On):0.19Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:5Vrohs Compliant: Yes
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Parte # Mfg. Descripción Valores Precio
IXFH36N60P
DISTI # IXFH36N60P-ND		IXYS CorporationMOSFET N-CH 600V 36A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube		93In Stock
  • 510:$6.1551
  • 120:$7.3463
  • 30:$8.1407
  • 1:$9.9300
IXFH36N60P
DISTI # 58M7600		IXYS CorporationMOSFET, N, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:36A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.19ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power Dissipation Pd:650W,MSL:-RoHS Compliant: Yes40
  • 1:$10.3700
  • 10:$9.3400
  • 25:$7.7700
  • 50:$7.2200
  • 100:$7.0600
  • 250:$6.4500
  • 500:$5.8800
IXFH36N60P
DISTI # 747-IXFH36N60P		IXYS CorporationMOSFET 600V 36A
RoHS: Compliant		695
  • 1:$10.3700
  • 10:$9.3400
  • 25:$7.7700
  • 50:$7.2200
  • 100:$7.0600
  • 250:$6.4500
  • 500:$5.8800
  • 1000:$5.6100
IXFH36N60PIXYS Corporation36 A, 600 V, 0.19 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-247AD5
  • 4:$5.4000
  • 2:$7.2000
  • 1:$10.8000
IXFH36N60P
DISTI # 1427299		IXYS CorporationMOSFET, N, TO-247
RoHS: Compliant		40
  • 1:$15.8300
  • 30:$12.9800
  • 120:$11.7100
  • 510:$9.8200
IXFH36N60P
DISTI # 1427299		IXYS CorporationMOSFET, N, TO-247
RoHS: Compliant		40
  • 1:£8.7400
  • 5:£8.1500
  • 10:£6.1000
  • 50:£5.6800
  • 100:£5.5500
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Disponibilidad
Valores:
Available
En orden:
1984
Ingrese la cantidad:
El precio actual de IXFH36N60P es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
9,03 US$
9,03 US$
10
8,21 US$
82,10 US$
25
7,40 US$
185,00 US$
50
7,22 US$
361,00 US$
100
6,67 US$
667,00 US$
250
6,45 US$
1 612,50 US$
500
5,59 US$
2 795,00 US$
1000
5,19 US$
5 190,00 US$
2500
4,80 US$
12 000,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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