IPDD60R102G7XTMA1

Mfr. #:: IPDD60R102G7XTMA1
Fabricante:: Infineon Technologies
Descripción:: MOSFET NCH 650V 66A PG-HDSOP-10
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: IPDD60R102G7XTMA1 Ficha de datos
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Tags: IPDD60R1, IPDD6, IPDD, IPD

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPDD60R102G7XTMA1 Descripción

***ure Electronics: N-Channel 600 V 102 mOhm 34 nC CoolMOS G7 Power Transistor - HDSOP-10

***ical: Trans MOSFET N-CH 600V 23A 10-Pin HDSOP EP T/R

***i-Key: MOSFET NCH 650V 66A PG-HDSOP-10

***ronik: N-CH 600V 23A 88mOhm HDSOP-10

***et Europe: HIGH POWER_NEW

***ark: Mosfet, N-Ch, 600V, 23A, Hdsop; Transistor Polarity:n Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.088Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 600V, 23A, HDSOP; Transistor Polarity:N Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.088ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:139W; Transistor Case Style:HDSOP; No. of Pins:10Pins; Operating Temperature Max:150°C; Product Range:CoolMOS C7 Gold Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, CA-N, 600V, 23A, HDSOP; Polarità Transistor:Canale N; Corrente Continua di Drain Id:23A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.088ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:139W; Modello Case Transistor:HDSOP; No. di Pin:10Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS C7 Gold Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

Market price

Parte #	Mfg.	Descripción	Valores	Precio
IPDD60R102G7XTMA1 DISTI # V72:2272_19084635	Infineon Technologies AG	Trans MOSFET N-CH 600V 23A 10-Pin HDSOP EP T/R	0
IPDD60R102G7XTMA1 DISTI # IPDD60R102G7XTMA1CT-ND	Infineon Technologies AG	MOSFET NCH 650V 66A PG-HDSOP-10 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	490In Stock	500:$3.6173 100:$4.4672 10:$5.4480 1:$6.1000
IPDD60R102G7XTMA1 DISTI # IPDD60R102G7XTMA1DKR-ND	Infineon Technologies AG	MOSFET NCH 650V 66A PG-HDSOP-10 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	490In Stock	500:$3.6173 100:$4.4672 10:$5.4480 1:$6.1000
IPDD60R102G7XTMA1 DISTI # IPDD60R102G7XTMA1TR-ND	Infineon Technologies AG	MOSFET NCH 650V 66A PG-HDSOP-10 RoHS: Compliant Min Qty: 1700 Container: Tape & Reel (TR)	On Order	3400:$2.8138 1700:$2.9619
IPDD60R102G7XTMA1 DISTI # IPDD60R102G7XTMA1	Infineon Technologies AG	HIGH POWER_NEW - Tape and Reel (Alt: IPDD60R102G7XTMA1) RoHS: Compliant Min Qty: 1700 Container: Reel	Americas - 0	1700:$2.6900 3400:$2.5900 6800:$2.4900 10200:$2.3900 17000:$2.3900
IPDD60R102G7XTMA1 DISTI # SP001632832	Infineon Technologies AG	HIGH POWER_NEW (Alt: SP001632832) RoHS: Compliant Min Qty: 1700	Europe - 0	1700:€3.3900 3400:€2.7900 6800:€2.4900 10200:€2.3900 17000:€2.1900
IPDD60R102G7XTMA1 DISTI # 59AC7041	Infineon Technologies AG	MOSFET, N-CH, 600V, 23A, HDSOP,Transistor Polarity:N Channel,Continuous Drain Current Id:23A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.088ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes	475	1000:$2.6900 500:$3.1900 250:$3.5500 100:$3.7500 50:$3.9400 25:$4.1300 10:$4.3200 1:$5.0900
IPDD60R102G7XTMA1 DISTI # 726-IPDD60R102G7XTM1	Infineon Technologies AG	MOSFET HIGH POWER_NEW RoHS: Compliant	470	1:$5.0900 10:$4.3200 100:$3.7500 250:$3.5500 500:$3.1900 1000:$2.6900 1700:$2.5500
IPDD60R102G7XTMA1	Infineon Technologies AG	650v, 66a, 102mOhms, DDPAK Mosfet RoHS: Compliant	30Cut Tape/Mini-Reel	1:$4.3200 50:$3.2100 100:$3.0400 250:$2.8300 500:$2.6900
IPDD60R102G7XTMA1 DISTI # 2888463	Infineon Technologies AG	MOSFET, N-CH, 600V, 23A, HDSOP RoHS: Compliant	475	500:$5.3800 100:$6.6400 10:$8.0900 1:$9.0600
IPDD60R102G7XTMA1 DISTI # 2888463	Infineon Technologies AG	MOSFET, N-CH, 600V, 23A, HDSOP RoHS: Compliant	475	500:£2.4900 250:£2.7600 100:£2.9200 10:£3.3600 1:£4.4100

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	Mfr.#: IPDD60R125G7XTMA1 OMO.#: OMO-IPDD60R125G7XTMA1	MOSFET HIGH POWER_NEW
	Mfr.#: IPDD60R190G7XTMA1 OMO.#: OMO-IPDD60R190G7XTMA1	MOSFET HIGH POWER_NEW
	Mfr.#: IPDD60R102G7XTMA1 OMO.#: OMO-IPDD60R102G7XTMA1	MOSFET HIGH POWER_NEW
	Mfr.#: IPDD60R102G7XTMA1 OMO.#: OMO-IPDD60R102G7XTMA1-INFINEON-TECHNOLOGIES	MOSFET NCH 650V 66A PG-HDSOP-10
	Mfr.#: IPDD60R125G7XTMA1 OMO.#: OMO-IPDD60R125G7XTMA1-INFINEON-TECHNOLOGIES	MOSFET NCH 650V 54A PG-HDSOP-10
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	Mfr.#: IPDD60R102G7XTMA1-CUT TAPE OMO.#: OMO-IPDD60R102G7XTMA1-CUT-TAPE-1190	Nuevo y original
	Mfr.#: IPDD60R125G7XTMA1-CUT TAPE OMO.#: OMO-IPDD60R125G7XTMA1-CUT-TAPE-1190	Nuevo y original
	Mfr.#: IPDD60R190G7XTMA1-CUT TAPE OMO.#: OMO-IPDD60R190G7XTMA1-CUT-TAPE-1190	Nuevo y original

Disponibilidad

Valores:: Available
En orden:: 1500
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El precio actual de IPDD60R102G7XTMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~3,58 US$~~; ~~3,58 US$~~

10: ~~3,41 US$~~; ~~34,06 US$~~

100: ~~3,23 US$~~; ~~322,65 US$~~

500: ~~3,05 US$~~; ~~1 523,65 US$~~

1000: ~~2,87 US$~~; ~~2 868,00 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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IPDD60R102G7XTMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes