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ZXMN6A25N8TA

ZXMN6A25N8TA
Mfr. #:
ZXMN6A25N8TA
Fabricante:
Diodes Incorporated
Descripción:
MOSFET N-CHANNEL 60V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
ZXMN6A25N8TA Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
ZXMN6A25N8TA DatasheetZXMN6A25N8TA Datasheet (P4-P6)ZXMN6A25N8TA Datasheet (P7-P8)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Diodos incorporados
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SO-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
60 V
Id - Corriente de drenaje continua:
5.7 A
Rds On - Resistencia de la fuente de drenaje:
50 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
2.8 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Carrete
Altura:
1.5 mm
Longitud:
5 mm
Serie:
ZXMN6
Tipo de transistor:
1 N-Channel
Ancho:
4 mm
Marca:
Diodos incorporados
Otoño:
10.6 ns
Tipo de producto:
MOSFET
Hora de levantarse:
4 ns
Cantidad de paquete de fábrica:
500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
26.2 ns
Tiempo típico de retardo de encendido:
3.8 ns
Unidad de peso:
0.002610 oz
Tags
ZXMN6A2, ZXMN6A, ZXMN6, ZXMN, ZXM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 60 V 0.05 Ohm Power MOSFET Surface Mount - SOIC-8
***C
Trans MOSFET N-CH 60V 5.7A 8-Pin SOIC T/R
***des Inc SCT
60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS
***ure Electronics
Single N-Channel 60 V 0.036 Ohms Surface Mount Power Mosfet - SOIC-8
***et
Trans MOSFET N-CH 60V 6.1A 8-Pin SOIC N T/R
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:8A; Drain Source Voltage, Vds:60V; On Resistance, Rds(on):0.036ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.5V; Power Dissipation, Pd:2.5W ;RoHS Compliant: Yes
***(Formerly Allied Electronics)
SI4436DY-T1-GE3 N-channel MOSFET Transistor; 8 A; 60 V; 8-Pin SOIC
***ure Electronics
Single N-Channel 60 V 0.036 Ohms Surface Mount Power Mosfet - SOIC-8
***p One Stop
Trans MOSFET N-CH 60V 6.1A 8-Pin SOIC N T/R
***ark
N Channel Mosfet, 60V, 8A, Soic, Full Reel; Channel Type:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:8A; Transistor Mounting:surface Mount; Rds(On) Test Voltage:20V; Gate Source Threshold Voltage Max:2.5V Rohs Compliant: No
***ment14 APAC
MOSFET,N CH,DIODE,60V,8A,8-SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.03ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.1A; Power Dissipation Pd:2.5W; Voltage Vgs Max:20V
***(Formerly Allied Electronics)
SI4946BEY-T1-GE3 Dual N-channel MOSFET Transistor; 6.5 A; 60 V; 8-Pin SOIC
***et Europe
Transistor MOSFET Array Dual N-CH 60V 6.5A 8-Pin SOIC T/R
***ure Electronics
DUAL N-CH MOSFET SO-8 60V 41MOHM @ 10V 175C- LEAD(PB) AND HALOGEN FREE
***enic
60V 6.5A 2.4W 41m´Î@10V5.3A 3V@250Ã×A 2 N-Channel SOIC-8_150mil MOSFETs ROHS
***ment14 APAC
MOSFET, DUAL N-CH, 60V, 6.5A, SOIC; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:6.5A; Source Voltage Vds:60V; On Resistance
***roFlash
Power Field-Effect Transistor, 6.5A I(D), 60V, 0.041ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***el Electronic
Transistors - FETs, MOSFETs - Arrays 1 (Unlimited) Tape & Reel (TR) 8-SOIC (0.154, 3.90mm Width) Surface Mount 2 N-Channel (Dual) Logic Level Gate -55°C~175°C TJ 41m Ω @ 5.3A, 10V 3V @ 250μA MOSFET 2N-CH 60V 6.5A 8-SOIC
***nell
MOSFET, DUAL N-CH, 60V, 6.5A, SOIC; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 6.5A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.4V; Power Dissipation Pd: 3.7W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)
***ure Electronics
ZXMN6A25 Series 60 V 0.5 Ohm Dual N-Channel Enhancement Mode MOSFET - SOIC-8
***C
Trans MOSFET N-CH 60V 5A 8-Pin SOIC T/R Trans MOSFET N-CH 60V 5A 8-Pin SOIC T/R Trans MOSFET N-CH 60V 5A 8-Pin SOIC T/R Trans MOSFET N-CH 60V 5A 8-Pin SOIC T/R
***(Formerly Allied Electronics)
MOSFET Dual N-Channel 60V 5A/4.2A SOIC8
***nell
MOSFET, DUAL, N, 60VSO-8; Transistor Type:Enhancement; Transistor Polarity:Dual N; Voltage, Vds Typ:60V; Current, Id Cont:5A; Resistance, Rds On:0.05ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:24A; Pin Configuration:1(S1), 2(G1),3(S2),4(G2),5+6(D2),7+8(D1); Power, Pd:1.25W; Transistors, No. of:2; Voltage, Vds Max:60V
***emi
N-Channel PowerTrench® MOSFET 60V, 6.1A, 35mΩ
***ure Electronics
N-Channel 60 V 35 mOhm SMT PowerTrench Mosfet SOIC-8
***Yang
Trans MOSFET N-CH 60V 6.1A 8-Pin SOIC N T/R - Tape and Reel
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
***ure Electronics
ZXMC4559DN8 Series 60 V 0.55 Ohm Dual N/P-Channel Enhancement Mode MOSFET SOIC-8
***C
Trans MOSFET N/P-CH 60V 4.7A/3.5A 8-Pin SOIC T/R Trans MOSFET N/P-CH 60V 4.7A/3.5A 8-Pin SOIC T/R Trans MOSFET N/P-CH 60V 4.7A/3.5A 8-Pin SOIC T/R Trans MOSFET N/P-CH 60V 4.7A/3.5A 8-Pin SOIC T/R
***ark
MOSFET, N & P CHANNEL, DUAL, 60V, 4.7A, SOIC-8
***ment14 APAC
MOSFET, DUAL, NP, 60V, SO-8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:3.9A; Source Voltage Vds:60V; On Resistance
***roFlash
Small Signal Field-Effect Transistor, 3.6A I(D), 60V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: SO-8 Polarity: N/P Variants: Enhancement mode Power dissipation: 1.25 W
***nell
MOSFET, DUAL, NP, 60V, SO-8; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 3.9A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.105ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 2.1W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Continuous Drain Current Id, N Channel: 4.7A; Continuous Drain Current Id, P Channel: -3.9A; Current Id Max: 4.7A; Drain Source Voltage Vds, N Channel: 60V; Drain Source Voltage Vds, P Channel: -60V; Module Configuration: Dual; No. of Transistors: 2; On Resistance Rds(on), N Channel: 0.055ohm; On Resistance Rds(on), P Channel: 0.105ohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pin Configuration: 1(S1), 2(G1),3(S2),4(G2),5+6(D2),7+8(D1); Pulse Current Idm: 18.3A; Termination Type: Surface Mount Device; Voltage Vds Typ: 60V
Parte # Mfg. Descripción Valores Precio
ZXMN6A25N8TA
DISTI # 26572888		Zetex / Diodes IncTrans MOSFET N-CH 60V 5.7A Automotive 8-Pin SOIC T/R
RoHS: Compliant		20500
  • 500:$0.3875
ZXMN6A25N8TA
DISTI # ZXMN6A25N8TADI-ND		Diodes IncorporatedMOSFET N-CH 60V 8SO
RoHS: Compliant
Min Qty: 500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 500:$0.6479
ZXMN6A25N8TA
DISTI # 621-ZXMN6A25N8TA		Diodes IncorporatedMOSFET N-CHANNEL 60V
RoHS: Compliant		0
  • 1:$1.0200
  • 10:$0.8680
  • 100:$0.6670
  • 500:$0.5900
ZXMN6A25N8TAZetex / Diodes Inc 2580
    ZXMN6A25N8TAZetex / Diodes Inc 304
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      El precio actual de ZXMN6A25N8TA es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
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      1
      1,01 US$
      1,01 US$
      10
      0,87 US$
      8,68 US$
      100
      0,67 US$
      66,70 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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