RGS60TS65DHRC11

RGS60TS65DHRC11
Mfr. #:
RGS60TS65DHRC11
Fabricante:
Rohm Semiconductor
Descripción:
650V 30A FIELD STOP TRENCH IGBT.
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
RGS60TS65DHRC11 Ficha de datos
Entrega:
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ECAD Model:
Más información:
RGS60TS65DHRC11 más información
Atributo del producto
Valor de atributo
Tags
RGS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 56A 223000mW Automotive 3-Pin(3+Tab) TO-247N Tube
***et
Field Stop Trench IGBT Transistor N-Channel 650V 30A 3-Pin TO-247N Tube
***i-Key
650V 30A FIELD STOP TRENCH IGBT.
***ronik
IGBT 650V 30A 1,65V TO-247 AECQ
***
650V 30A FIELD STOP TRENCH
***ark
Fieldstop Trench Igbt650V30Apd223Wto247N; Dc Collector Current:56A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:223W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247N; No. Of Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. FIELDSTOP TRENCH IGBT650V30APD223WTO247N; DC Collector Current:56A; Collector Emitter Saturation Voltage Vce(on):1.65V; Power Dissipation Pd:223W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247N; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)
***nell
FIELDSTOP TRENCH IGBT650V30APD223WTO247N; Corrente di Collettore CC:56A; Tensione Saturaz Collettore-Emettitore Vce(on):1.65V; Dissipazione di Potenza Pd:223W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-247N; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018)
Field Stop Trench IGBTs
ROHM Field Stop Trench IGBTs are energy saving high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit withstand time, and built-in very fast & soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioner, welder, and general inverters for industrial use.
Parte # Mfg. Descripción Valores Precio
RGS60TS65DHRC11
DISTI # 846-RGS60TS65DHRC11-ND
ROHM Semiconductor650V 30A FIELD STOP TRENCH IGBT.
RoHS: Not compliant
Min Qty: 1
Container: Tube
On Order
  • 2520:$3.3600
  • 510:$3.9840
  • 120:$4.6800
  • 30:$5.4000
  • 10:$5.7120
  • 1:$6.3600
RGS60TS65DHRC11
DISTI # 755-RGS60TS65DHRC11
ROHM SemiconductorIGBT Transistors 650V 30A FIELD STOP TRENCH
RoHS: Compliant
0
  • 1:$6.3500
  • 10:$5.3900
  • 100:$4.6800
  • 250:$4.4400
RGS60TS65DHRC11
DISTI # IGBT2246
ROHM SemiconductorIGBT 650V 30A 1,65V TO-247 AECQ
RoHS: Compliant
Stock DE - 0Stock HK - 0Stock US - 0
  • 450:$4.2100
  • 900:$3.8900
  • 1350:$3.6000
RGS60TS65DHRC11
DISTI # 2766350
ROHM SemiconductorFIELDSTOP TRENCH IGBT650V30APD223WTO247N
RoHS: Compliant
0
  • 1000:$5.0000
  • 500:$5.0600
  • 250:$5.3400
  • 100:$5.6400
  • 10:$6.3700
  • 1:$6.8200
RGS60TS65DHRC11
DISTI # 2766350
ROHM SemiconductorFIELDSTOP TRENCH IGBT650V30APD223WTO247N0
  • 500:£2.7300
  • 250:£3.0100
  • 100:£3.1600
  • 10:£3.6200
  • 1:£4.7500
RGS60TS65DHRC11ROHM SemiconductorIGBT Transistors 650V 30A FIELD STOP TRENCH
RoHS: Compliant
Americas -
    Imagen Parte # Descripción
    RGS60TS65DHRC11

    Mfr.#: RGS60TS65DHRC11

    OMO.#: OMO-RGS60TS65DHRC11

    IGBT Transistors 650V 30A FIELD STOP TRENCH
    RGS60TS65HRC11

    Mfr.#: RGS60TS65HRC11

    OMO.#: OMO-RGS60TS65HRC11

    IGBT Transistors 650V 30A FIELD STOP TRENCH
    RGS60TS65DHRC11

    Mfr.#: RGS60TS65DHRC11

    OMO.#: OMO-RGS60TS65DHRC11-1190

    650V 30A FIELD STOP TRENCH IGBT.
    Disponibilidad
    Valores:
    Available
    En orden:
    1500
    Ingrese la cantidad:
    El precio actual de RGS60TS65DHRC11 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    5,37 US$
    5,37 US$
    10
    5,10 US$
    51,02 US$
    100
    4,83 US$
    483,30 US$
    500
    4,56 US$
    2 282,25 US$
    1000
    4,30 US$
    4 296,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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