IRFU3706PBF

IRFU3706PBF
Mfr. #:
IRFU3706PBF
Fabricante:
Infineon / IR
Descripción:
MOSFET 20V 1 N-CH HEXFET 9mOhms 23nC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRFU3706PBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFU3706PBF DatasheetIRFU3706PBF Datasheet (P4-P6)IRFU3706PBF Datasheet (P7-P9)IRFU3706PBF Datasheet (P10-P11)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-251-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
20 V
Id - Corriente de drenaje continua:
75 A
Rds On - Resistencia de la fuente de drenaje:
11 mOhms
Vgs - Voltaje puerta-fuente:
12 V
Qg - Carga de puerta:
23 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
88 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Altura:
6.22 mm
Longitud:
6.73 mm
Tipo de transistor:
1 N-Channel
Escribe:
MOSFET Smps
Ancho:
2.38 mm
Marca:
Infineon / IR
Otoño:
4.8 ns
Tipo de producto:
MOSFET
Hora de levantarse:
87 ns
Cantidad de paquete de fábrica:
6525
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
17 ns
Tiempo típico de retardo de encendido:
6.8 ns
Unidad de peso:
0.139332 oz
Tags
IRFU3706, IRFU370, IRFU37, IRFU3, IRFU, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ernational Rectifier
20V Single N-Channel HEXFET Power MOSFET in a I-Pak package
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:75A; On Resistance, Rds(on):9mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:IPAK ;RoHS Compliant: Yes
***nell
MOSFET, N, 20V, 75A, I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Current, Id Cont:75A; Resistance, Rds On:0.009ohm; Case Style:TO-251 (I-Pak); Alternate Case Style:I-PAK; Current, Idm Pulse:280A; Power Dissipation:88W; Power, Pd:88W; Resistance, Rds on @ Vgs = 10V:9ohm; Thermal Resistance, Junction to Case A:1.7°C/W; Time, t Off:4.8ns; Time, t On:87ns; Voltage, Vds Max:20V
Parte # Mfg. Descripción Valores Precio
IRFU3706PBF
DISTI # IRFU3706PBF-ND
Infineon Technologies AGMOSFET N-CH 20V 75A I-PAK
RoHS: Compliant
Min Qty: 6525
Container: Tube
Limited Supply - Call
    IRFU3706PBF
    DISTI # 70018376
    Infineon Technologies AGMOSFET,20V,75A,9 MOHM,23 NC QG,I-PAK
    RoHS: Compliant
    0
    • 6525:$0.5000
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    Nuevo y original
    Disponibilidad
    Valores:
    Available
    En orden:
    2000
    Ingrese la cantidad:
    El precio actual de IRFU3706PBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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