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Parte # | Mfg. | Descripción | Valores | Precio |
---|---|---|---|---|
IPW65R280E6FKSA1 DISTI # V99:2348_06377602 | Infineon Technologies AG | Trans MOSFET N-CH 700V 13.8A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant | 240 |
|
IPW65R280E6FKSA1 DISTI # IPW65R280E6FKSA1-ND | Infineon Technologies AG | MOSFET N-CH 650V 13.8A TO247 RoHS: Compliant Min Qty: 240 Container: Tube | Limited Supply - Call | |
IPW65R280E6FKSA1 DISTI # 26197272 | Infineon Technologies AG | Trans MOSFET N-CH 700V 13.8A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant | 240 |
|
IPW65R280E6FKSA1 DISTI # IPW65R280E6FKSA1 | Infineon Technologies AG | Trans MOSFET N-CH 700V 13.8A 3-Pin TO-247 Tube - Bulk (Alt: IPW65R280E6FKSA1) Min Qty: 205 Container: Bulk | Americas - 0 |
|
IPW65R280E6 DISTI # 726-IPW65R280E6 | Infineon Technologies AG | MOSFET N-Ch 700V 13.8A TO247-3 CoolMOS E6 RoHS: Compliant | 351 |
|
IPW65R280E6FKSA1 DISTI # N/A | Infineon Technologies AG | MOSFET LOW POWER_LEGACY | 0 | |
IPW65R280E6FKSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 650V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 RoHS: Compliant | 716 |
|
IPW65R280E6FKSA1 | Infineon Technologies AG | 147 | ||
IPW65R280E6FKSA1 DISTI # IPW65R280E6FKSA1 | Infineon Technologies AG | Transistor: N-MOSFET,unipolar,650V,13.8A,104W,PG-TO247-3 | 121 |
|
IPW65R280E6FKSA1 DISTI # IPW65R280E6 | Infineon Technologies AG | N-Ch 650V 13,8A 104W 0,28R TO247 RoHS: Compliant | 254 |
|
Imagen | Parte # | Descripción |
---|---|---|
Mfr.#: IPW65R280E6FKSA1 OMO.#: OMO-IPW65R280E6FKSA1 |
MOSFET LOW POWER_LEGACY | |
Mfr.#: IPW65R280E6FKSA1 |
MOSFET N-CH 650V 13.8A TO247 | |
Mfr.#: IPW65R280C6 OMO.#: OMO-IPW65R280C6-1190 |
MOSFET N-Ch 700V 13.8A TO247-3 CoolMOS C6 | |
Mfr.#: IPW65R280C6FKSA1 |
MOSFET N-CH 650V 13.8A TO247 | |
Mfr.#: IPW65R280E6 , 2SJ314-01S |
Nuevo y original | |
Mfr.#: IPW65R280E6 OMO.#: OMO-IPW65R280E6-124 |
Darlington Transistors MOSFET N-Ch 700V 13.8A TO247-3 CoolMOS E6 |