RQ3E120GNTB

RQ3E120GNTB
Mfr. #:
RQ3E120GNTB
Fabricante:
Rohm Semiconductor
Descripción:
MOSFET 4.5V Drive Nch MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
RQ3E120GNTB Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
RQ3E120GNTB más información
Atributo del producto
Valor de atributo
Fabricante:
Semiconductor ROHM
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
HSMT-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
12 A
Rds On - Resistencia de la fuente de drenaje:
8.8 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2.5 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
10 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
2 W
Configuración:
Único
Embalaje:
Carrete
Tipo de transistor:
1 N-Channel
Marca:
Semiconductor ROHM
Transconductancia directa - Mín .:
10 S
Otoño:
3.4 ns
Tipo de producto:
MOSFET
Hora de levantarse:
4.5 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
25.5 ns
Tiempo típico de retardo de encendido:
9.6 ns
Parte # Alias:
RQ3E120GN
Tags
RQ3E120G, RQ3E12, RQ3E1, RQ3E, RQ3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 30V 12A Automotive 8-Pin HSMT EP T/R
***ure Electronics
RQ3E120GN Series 30 V 27 A 15 W Surface Mount N-Channel Power Mosfet - HSMT-8
***nell
MOSFET, N-CH, 30V, 27A, HSMT-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 27A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0067ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 15W; Transistor Case Style: HSMT; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
Silicon Power MOSFETs
ROHM Semiconductor Silicon Power MOSFETs feature ultrafast switching speeds and low on-resistance. The MOSFETs are available in a wide lineup of packages, including the miniature 0604 package, for space saving in designs.
Medium Power MOSFETs
ROHM Medium Power MOSFETs are low ON-resistance devices useful for a wide range of applications. They feature a broad lineup with compact, high-power and complex types to meet various needs. They come in high-power small mold packages and typical applications are for DC/DC converters and load switches.
Parte # Mfg. Descripción Valores Precio
RQ3E120GNTB
DISTI # 30650036
ROHM SemiconductorTrans MOSFET N-CH 30V 12A 8-Pin HSMT T/R
RoHS: Compliant
3000
  • 71:$0.3562
RQ3E120GNTB
DISTI # RQ3E120GNTBCT-ND
ROHM SemiconductorMOSFET N-CH 30V 12A 8-HSMT
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
5672In Stock
  • 1000:$0.1734
  • 500:$0.2243
  • 100:$0.2855
  • 10:$0.3820
  • 1:$0.4500
RQ3E120GNTB
DISTI # RQ3E120GNTBDKR-ND
ROHM SemiconductorMOSFET N-CH 30V 12A 8-HSMT
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
5672In Stock
  • 1000:$0.1734
  • 500:$0.2243
  • 100:$0.2855
  • 10:$0.3820
  • 1:$0.4500
RQ3E120GNTB
DISTI # RQ3E120GNTBTR-ND
ROHM SemiconductorMOSFET N-CH 30V 12A 8-HSMT
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
3000In Stock
  • 30000:$0.1317
  • 15000:$0.1336
  • 6000:$0.1436
  • 3000:$0.1535
RQ3E120GNTB
DISTI # C1S625901169801
ROHM SemiconductorTrans MOSFET N-CH 30V 12A 8-Pin HSMT T/R3000
  • 1000:$0.1760
  • 100:$0.1850
  • 50:$0.1980
  • 10:$0.2850
RQ3E120GNTB
DISTI # RQ3E120GNTB
ROHM SemiconductorTrans N-CH 30V ±12A 8-Pin HSMT T/R (Alt: RQ3E120GNTB)
RoHS: Compliant
Min Qty: 1
Container: Tape and Reel
Europe - 0
  • 5000:€0.1490
  • 1000:€0.1520
  • 500:€0.2230
  • 250:€0.2640
  • 100:€0.3030
  • 25:€0.4320
  • 5:€0.4590
RQ3E120GNTB
DISTI # RQ3E120GNTB
ROHM SemiconductorTrans N-CH 30V ±12A 8-Pin HSMT T/R - Tape and Reel (Alt: RQ3E120GNTB)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
    RQ3E120GNTB
    DISTI # 10AC8919
    ROHM SemiconductorMOSFET, N-CH, 30V, 27A, HSMT-8,Transistor Polarity:N Channel,Continuous Drain Current Id:27A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0067ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Power RoHS Compliant: Yes109
    • 1000:$0.1710
    • 500:$0.1870
    • 250:$0.2040
    • 100:$0.2200
    • 50:$0.2670
    • 25:$0.3140
    • 10:$0.3620
    • 1:$0.4340
    RQ3E120GNTB
    DISTI # 755-RQ3E120GNTB
    ROHM SemiconductorMOSFET 4.5V Drive Nch MOSFET
    RoHS: Compliant
    7141
    • 1:$0.4300
    • 10:$0.3580
    • 100:$0.2180
    • 1000:$0.1690
    • 3000:$0.1440
    • 9000:$0.1340
    • 24000:$0.1270
    • 45000:$0.1240
    RQ3E120GNTBROHM Semiconductor 75
    • 25:$0.6300
    • 6:$0.8400
    • 1:$1.0500
    RQ3E120GNTB
    DISTI # 2706634
    ROHM SemiconductorMOSFET, N-CH, 30V, 27A, HSMT-8
    RoHS: Compliant
    109
    • 1000:$0.2620
    • 500:$0.3390
    • 100:$0.4310
    • 10:$0.5760
    • 1:$0.6800
    RQ3E120GNTB
    DISTI # 2706634
    ROHM SemiconductorMOSFET, N-CH, 30V, 27A, HSMT-80
    • 500:£0.1190
    • 250:£0.1410
    • 100:£0.1630
    • 25:£0.2310
    • 5:£0.2460
    RQ3E120GNTBROHM Semiconductor 3000
    • 1:¥4.4307
    • 100:¥2.5122
    • 1500:¥1.5927
    • 3000:¥1.1866
    RQ3E120GNTBROHM SemiconductorMOSFET 4.5V Drive Nch MOSFET
    RoHS: Compliant
    Americas -
      RQ3E120GNTBROHM SemiconductorRoHS(ship within 1day)94
      • 1:$0.8200
      • 10:$0.4800
      • 50:$0.3000
      • 100:$0.2600
      • 500:$0.2200
      • 1000:$0.2100
      Imagen Parte # Descripción
      NVT2002DP,118

      Mfr.#: NVT2002DP,118

      OMO.#: OMO-NVT2002DP-118

      Translation - Voltage Levels Interface IC
      ADUM5020-5BRWZ

      Mfr.#: ADUM5020-5BRWZ

      OMO.#: OMO-ADUM5020-5BRWZ

      Switching Voltage Regulators isoPower 3kV,
      BD9D321EFJ-E2

      Mfr.#: BD9D321EFJ-E2

      OMO.#: OMO-BD9D321EFJ-E2

      Switching Voltage Regulators IC Pwr Swtch Reg Integrated FET
      SMLMN2WB1CW1C

      Mfr.#: SMLMN2WB1CW1C

      OMO.#: OMO-SMLMN2WB1CW1C

      Standard LEDs - SMD White 140mcd 2.9V; 5mA; 0805
      TMK107BBJ475MA-T

      Mfr.#: TMK107BBJ475MA-T

      OMO.#: OMO-TMK107BBJ475MA-T-TAIYO-YUDEN

      CAP CER 4.7UF 25V X5R 0603
      ERJ2RKD3003X

      Mfr.#: ERJ2RKD3003X

      OMO.#: OMO-ERJ2RKD3003X-433

      Res Thick Film 0402 300K Ohm 0.5% 0.063W(1/16W) ±100ppm/C Pad SMD Automotive T/R
      NVT2002DP,118

      Mfr.#: NVT2002DP,118

      OMO.#: OMO-NVT2002DP-118-NXP-SEMICONDUCTORS

      Translation - Voltage Levels Interface IC
      ADUM5020-5BRWZ

      Mfr.#: ADUM5020-5BRWZ

      OMO.#: OMO-ADUM5020-5BRWZ-ANALOG-DEVICES

      isoPower 3kV, LowEMI, 500mW pwr, 5V
      BD9D321EFJ-E2

      Mfr.#: BD9D321EFJ-E2

      OMO.#: OMO-BD9D321EFJ-E2-ROHM-SEMI

      Voltage Regulators - Switching Regulators ICs, Power Management, Switching Regulators, Switching Regulators (Integrated FET), Buck Converters (Synchronous)
      Disponibilidad
      Valores:
      Available
      En orden:
      1987
      Ingrese la cantidad:
      El precio actual de RQ3E120GNTB es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,43 US$
      0,43 US$
      10
      0,36 US$
      3,58 US$
      100
      0,22 US$
      21,80 US$
      1000
      0,17 US$
      169,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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