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FCH25N60N

FCH25N60N
Mfr. #:
FCH25N60N
Fabricante:
ON Semiconductor
Descripción:
MOSFET N-CH 600V 25A TO-247
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FCH25N60N Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
FCH25N60N más información
Atributo del producto
Valor de atributo
Fabricante
FAIRCHILD
categoria de producto
FET - Single
embalaje
Tubo
Unidad de peso
0.225401 oz
Estilo de montaje
A través del orificio
Paquete-Estuche
TO-247-3
Tecnología
Si
Número de canales
1 Channel
Tipo transistor
1 N-Channel
Disipación de potencia Pd
216 W
Temperatura máxima de funcionamiento
+ 150 C
Id-corriente-de-drenaje-continua
25 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Resistencia a la fuente de desagüe de Rds
108 mOhms
Polaridad del transistor
Canal N
Tags
FCH2, FCH
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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 25 A, 126 mΩ, TO-247
***Components
N-Channel MOSFET, 25 A, 600 V, 3-Pin TO-247 ON Semiconductor FCH25N60N
***ical
Trans MOSFET N-CH 600V 25A 3-Pin(3+Tab) TO-247 Tube
***ark
MOSFET, N CH, 600V, 25A, TO-247
***i-Key
MOSFET N-CH 600V 25A TO-247
***nell
MOSFET, N CH, 600V, 25A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.108ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:216W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; MSL:MSL 1 - Unlimited; Pulse Current Idm:75A
***ment14 APAC
MOSFET, N CH, 600V, 25A, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.108ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:216W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:75A
***rchild Semiconductor
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
N-Channel SupreMOS MOSFETs, FRFET
ON Semiconductor N-Channel SupreMOS MOSFETs, FRFET are ON Semiconductor's next generation of high voltage super-junction MOSFETs, employing a deep trench filling process that differentiates them from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness. These ON Semiconductor N-Channel SupreMOS MOSFETs fit the industry's AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.
Parte # Mfg. Descripción Valores Precio
FCH25N60N
DISTI # FCH25N60N-ND		ON SemiconductorMOSFET N-CH 600V 25A TO-247
RoHS: Compliant
Min Qty: 450
Container: Tube		Temporarily Out of Stock
  • 450:$3.9153
FCH25N60N
DISTI # FCH25N60N		ON SemiconductorTrans MOSFET N-CH 600V 25A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: FCH25N60N)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 450:$2.4900
  • 900:$2.3900
  • 1800:$2.3900
  • 2700:$2.3900
  • 4500:$2.2900
FCH25N60N
DISTI # 88T3230		ON SemiconductorMOSFET Transistor, N Channel, 25 A, 600 V, 0.108 ohm, 10 V, 2 V RoHS Compliant: Yes147
  • 1:$5.9100
FCH25N60NFairchild Semiconductor CorporationPower Field-Effect Transistor, 25A I(D), 600V, 0.126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB
RoHS: Compliant		7407
  • 1000:$4.6200
  • 500:$4.8600
  • 100:$5.0600
  • 25:$5.2800
  • 1:$5.6800
FCH25N60N
DISTI # 512-FCH25N60N		ON SemiconductorMOSFET 600V N-Channel MOSFET SupreMOS
RoHS: Compliant		0
  • 1:$5.0900
  • 10:$4.3200
  • 100:$3.7500
  • 250:$3.5600
FCH25N60N
DISTI # 7599443P		ON SemiconductorMOSFET N-CHANNEL 600V 25A SUPREMOS TO247, TU430
  • 10:£5.9300
  • 50:£5.4200
  • 150:£4.9100
  • 300:£4.5100
FCH25N60N
DISTI # 2083214		ON SemiconductorMOSFET, N CH, 600V, 25A, TO-247
RoHS: Compliant		177
  • 100:£4.5100
  • 50:£5.3500
  • 10:£6.1800
  • 5:£6.8800
  • 1:£7.4400
FCH25N60N
DISTI # 2083214		ON SemiconductorMOSFET, N CH, 600V, 25A, TO-247
RoHS: Compliant		147
  • 900:$7.9300
  • 450:$9.4300
  • 10:$12.4800
  • 1:$13.8800
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Disponibilidad
Valores:
Available
En orden:
2000
Ingrese la cantidad:
El precio actual de FCH25N60N es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
5,51 US$
5,51 US$
10
5,24 US$
52,38 US$
100
4,96 US$
496,26 US$
500
4,69 US$
2 343,45 US$
1000
4,41 US$
4 411,20 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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