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A2V07H525-04NR6

A2V07H525-04NR6
Mfr. #:
A2V07H525-04NR6
Fabricante:
NXP Semiconductors
Descripción:
RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 595-851 MHz, 120 W Avg., 48 V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
A2V07H525-04NR6 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
A2V07H525-04NR6 más información A2V07H525-04NR6 Product Details
Atributo del producto
Valor de atributo
Fabricante:
NXP
Categoria de producto:
Transistores RF MOSFET
RoHS:
Y
Polaridad del transistor:
Canal N dual
Tecnología:
Si
Id - Corriente de drenaje continua:
2.8 A
Vds - Voltaje de ruptura de drenaje-fuente:
- 500 mV, 105 V
Ganar:
17.5 dB
Potencia de salida:
120 W
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 150 C
Estilo de montaje:
SMD / SMT
Paquete / Caja:
OM-1230-4L
Embalaje:
Carrete
Frecuencia de operación:
595 MHz to 851 MHz
Escribe:
RF Power MOSFET
Marca:
Semiconductores NXP
Número de canales:
2 Channel
Sensible a la humedad:
Yes
Tipo de producto:
Transistores RF MOSFET
Cantidad de paquete de fábrica:
150
Subcategoría:
MOSFET
Vgs - Voltaje puerta-fuente:
- 6 V, 10 V
Vgs th - Voltaje umbral puerta-fuente:
1.3 V
Parte # Alias:
935339924528
Unidad de peso:
0.186557 oz
Tags
A2V0, A2V
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***escale Semiconductor
Airfast RF LDMOS Wideband Integrated power amplifier, 575-960 MHz, 525 W, 48 V
***ark
Airfast RF Power LDMOS Transistor, 595-851 MHz, 120 W Avg., 48 V / Reel 13" Q2/T3 in Drypack RoHS Compliant: Yes
***W
RF Power Transistor, 0.595 to 0.851 GHz, 602 W P3dB, Typ Gain in dB is 17.5 @ 623 MHz, 48 V, SOT1816-1, LDMOS
***i-Key
AIRFAST RF LDMOS WIDEBAND INTEGR
Parte # Mfg. Descripción Valores Precio
A2V07H525-04NR6
DISTI # A2V07H525-04NR6-ND		NXP SemiconductorsAIRFAST RF LDMOS WIDEBAND INTEGR
RoHS: Compliant
Min Qty: 150
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 150:$136.6405
A2V07H525-04NR6
DISTI # A2V07H525-04NR6		Avnet, Inc.Airfast RF LDMOS Wideband Integrated power amplifier, 575-960 MHz, 525 W, 48 V - Tape and Reel (Alt: A2V07H525-04NR6)
RoHS: Compliant
Min Qty: 150
Container: Reel		Americas - 0
  • 1500:$130.6900
  • 900:$133.1900
  • 600:$138.1900
  • 300:$143.7900
  • 150:$149.6900
A2V07H525-04NR6
DISTI # 17AC3550		NXP SemiconductorsAIRFAST RF POWER LDMOS TRANSISTOR, 595-851 MHZ, 120 W AVG., 48 V TR0
  • 25:$128.4300
  • 10:$136.6400
  • 5:$138.7000
  • 1:$140.7500
A2V07H525-04NR6
DISTI # 771-A2V07H525-04NR6		NXP SemiconductorsRF MOSFET Transistors A2V07H525-04N/FM4F///REEL 13 Q2 DP
RoHS: Compliant		0
  • 150:$127.1100
A2V07H525-04NR6
DISTI # A2V07H525-04NR6		NXP SemiconductorsRF & MW POWER AMPLIFIER
RoHS: Compliant		0
  • 150:$136.0900
Imagen Parte # Descripción
A2V07H525-04NR6

Mfr.#: A2V07H525-04NR6

OMO.#: OMO-A2V07H525-04NR6

 RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 595-851 MHz, 120 W Avg., 48 V
A2V07H525-04NR6

Mfr.#: A2V07H525-04NR6

OMO.#: OMO-A2V07H525-04NR6-NXP-SEMICONDUCTORS

 AIRFAST RF LDMOS WIDEBAND INTEGR
Disponibilidad
Valores:
Available
En orden:
5000
Ingrese la cantidad:
El precio actual de A2V07H525-04NR6 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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