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IXTP3N50P

IXTP3N50P
Mfr. #:
IXTP3N50P
Fabricante:
IXYS
Descripción:
Darlington Transistors MOSFET 3.6 Amps 500 V 2 Ohm Rds
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXTP3N50P Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
IXYS
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
IXTP3N50
embalaje
Tubo
Unidad de peso
0.081130 oz
Estilo de montaje
A través del orificio
Nombre comercial
PolarHV
Paquete-Estuche
TO-220-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
70 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
12 ns
Hora de levantarse
15 ns
Vgs-Puerta-Fuente-Voltaje
30 V
Id-corriente-de-drenaje-continua
3.6 A
Vds-Drain-Source-Breakdown-Voltage
500 V
Vgs-th-Gate-Source-Threshold-Voltage
5.5 V
Resistencia a la fuente de desagüe de Rds
2 Ohms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
38 ns
Tiempo de retardo de encendido típico
15 ns
Qg-Gate-Charge
9.3 nC
Transconductancia directa-Mín.
2.5 S
Modo de canal
Mejora
Tags
IXTP3N5, IXTP3N, IXTP3, IXTP, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***inecomponents.com
Trans MOSFET N-CH 500V 3.6A 3-Pin (3+Tab) TO-220
***ukat
N-Ch 500V 3,6A 70W 2R TO220AB
***S
new, original packaged
***el Nordic
Contact for details
***roFlash
N-channel 500 V, 1.22 Ohm typ., 4.4 A SuperMESH Power MOSFET in TO-220FP package
***icroelectronics
N-Channel 500V - 1.22 Ohm - 4.4A Zener-Protected SuperMESH(TM) POWER MOSFET
***ical
Trans MOSFET N-CH 500V 4.4A 3-Pin(3+Tab) TO-220FP Tube
***ure Electronics
STP5NK50 Series 500 V 4.4 A 1.5 Ohm Through Hole N-Ch Power MOSFET - TO-220FPAB
***ark
N CHANNEL MOSFET, 500V, 4.4A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:4.4A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 4.4A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
N CH MOSFET, UNITFET, 500V, 4.2A, TO-220F; Transistor Polarity:N Channel; Contin
***emi
N-Channel Power MOSFET, UniFETTM II, FRFET®, 500 V, 4.2 A, 1.75 Ω, TO-220F
***Yang
Trans MOSFET N-CH 500V 4.2A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 4.2A I(D), 500V, 1.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
N CH MOSFET, UNITFET, 500V, 4.2A, TO-220; N CH MOSFET, UNITFET, 500V, 4.2A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:4.2A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1.57ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; MSL:-
***rchild Semiconductor
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. The body diode’s reverse recovery performance of UniFET II FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***emi
N-Channel Power MOSFET, UniFETTM, Ultra FRFETTM MOSFET 500 V, 4 A, 2 Ω, TO-220F
***ark
500V, 4A, 2.0 ohm, NCH MOSFET FRFET - TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD
***et
Trans MOSFET N-CH 500V 4A 3-Pin(3+Tab) TO-220F Rail
***roFlash
Power Field-Effect Transistor, 4A I(D), 500V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. UniFET Ultra FRFETTM MOSFET has much superior body diode reverse recovery performance. Its trr is less than 50nsec and the reverse dv/dt immunity is 20V/nsec while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore UniFET Ultra FRFET MOSFET can remove additional component and improve system reliability in certain applications that require performance improvement of the MOSFET’s body diode. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***emi
N-Channel Power MOSFET, UniFETTM II, 500 V, 4.5 A, 1.5 Ω, TO-220F
***Yang
Trans MOSFET N-CH 500V 4.5A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***inecomponents.com
UniFET2 500V N-channel MOSFET, TO220F Single gage
***r Electronics
Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
N CH MOSFET, UNITFET, 500V, 4.5A, TO-220; N CH MOSFET, UNITFET, 500V, 4.5A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:500V; On Resistance Rds(on):1.38ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V
***rchild Semiconductor
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***i-Key
MOSFET N-CH 500V 3A TO-220F
***ser
MOSFETs 500V N-Channel QFET
***Yang
N-CH/500V/4A/1.8OHM - Bulk
***el Nordic
Contact for details
***icroelectronics
N-channel 600 V, 1.76 Ohm, 4 A SuperMESH(TM) Power MOSFET in TO-220FP
***(Formerly Allied Electronics)
STP4NK60ZFP, N-channel MOSFET Transistor 4A 600V, 3-Pin TO-220FP
*** Source Electronics
MOSFET N-CH 600V 4A TO-220FP / Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-220FP Tube
***ark
MOSFET, N, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:4A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; Power Dissipation:25W RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Parte # Mfg. Descripción Valores Precio
IXTP3N50P
DISTI # IXTP3N50P-ND		IXYS CorporationMOSFET N-CH 500V 3.6A TO-220
RoHS: Compliant
Min Qty: 50
Container: Tube		Limited Supply - Call
  • 50:$1.1396
EVLB001
DISTI # EVLB001-ND		IXYS CorporationKIT EVAL DIMMABLE LIGHT BALLAST
RoHS: Compliant
Min Qty: 1
Container: Box		Limited Supply - Call
    EVLB002
    DISTI # EVLB002-ND    		IXYS CorporationKIT EVAL NONDIM LIGHT BALLAST
    RoHS: Compliant
    Min Qty: 1
    Container: Box    		Limited Supply - Call
      IXTP3N50P
      DISTI # 747-IXTP3N50P      		IXYS CorporationMOSFET 3.6 Amps 500 V 2 Ohm Rds
      RoHS: Compliant      		202
      • 1:$1.3200
      • 10:$1.1900
      • 25:$1.0400
      • 50:$0.9710
      • 100:$0.9580
      • 250:$0.7770
      • 500:$0.7450
      • 1000:$0.6170
      • 2500:$0.5180
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      Disponibilidad
      Valores:
      Available
      En orden:
      2500
      Ingrese la cantidad:
      El precio actual de IXTP3N50P es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,78 US$
      0,78 US$
      10
      0,74 US$
      7,38 US$
      100
      0,70 US$
      69,93 US$
      500
      0,66 US$
      330,25 US$
      1000
      0,62 US$
      621,60 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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