NTMS4801NR2G

NTMS4801NR2G
Mfr. #:
NTMS4801NR2G
Fabricante:
ON Semiconductor
Descripción:
MOSFET NFET SO8 30V 9.9A 12.5mOhm
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
NTMS4801NR2G Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NTMS4801NR2G DatasheetNTMS4801NR2G Datasheet (P4-P5)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SOIC-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
12 A
Rds On - Resistencia de la fuente de drenaje:
9 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
2.1 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Carrete
Altura:
1.5 mm
Longitud:
5 mm
Serie:
NTMS4801N
Tipo de transistor:
1 N-Channel
Ancho:
4 mm
Marca:
EN Semiconductor
Otoño:
9.8 ns
Tipo de producto:
MOSFET
Hora de levantarse:
3.7 ns
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
29 ns
Tiempo típico de retardo de encendido:
10.5 ns
Unidad de peso:
0.006596 oz
Tags
NTMS480, NTMS48, NTMS4, NTMS, NTM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    V***f
    V***f
    RU

    Shine somehow not very!

    2019-05-14
    A***n
    A***n
    RU

    The product corresponds to the description. Ordered 05.05, received 05.07., with the seller did not communicate. I haven't tried it yet. How i try to write off.

    2019-07-07
    R***v
    R***v
    UA

    The fee works super, i advise, i even fit already.

    2019-03-12
***(Formerly Allied Electronics)
NTMS4801NR2G N-channel MOSFET Transistor; 12 A; 30 V; 8-Pin SOIC
***emi
Power MOSFET 30V 12A 9 mOhm Single N-Channel SO-8
***ark
N CHANNEL MOSFET, 30V, 9.9A, SOIC, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:9.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5VRoHS Compliant: Yes
***nell
MOSFET, N-CH, 30V, 12A, SOIC; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.007ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 1.41W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***emi
N-Channel PowerTrench® MOSFET, Logic Level, 30V, 13A, 8mΩ
***et Europe
Trans MOSFET N-CH 30V 13A 8-Pin SOIC N T/R
***ark
N CHANNEL MOSFET, 30V, 13A, SOIC; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:13A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.8V RoHS Compliant: Yes
***rchild Semiconductor
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
***nell
MOSFET, N, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.008ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: 13A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 50A; SMD Marking: FDS6670A; Termination Type: Surface Mount Device; Voltage Vds: 30V; Voltage Vds Typ: 30V; Voltage Vgs Max: 1.8V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Min: 1V
***ure Electronics
N-Channel 30 V 7 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
***emi
N-Channel PowerTrench® MOSFET 30V, 15A, 7.0mΩ
***et Europe
Trans MOSFET N-CH 30V 15A 8-Pin SOIC N T/R
***ment14 APAC
N CHANNEL MOSFET, 30V, 15A, SOIC; Transi; N CHANNEL MOSFET, 30V, 15A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V
***rchild Semiconductor
This N–Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize the on–state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
***ure Electronics
N-Channel 30 V 8.2 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
***emi
N-Channel PowerTrench® MOSFET 30V, 12.5A, 8.5mΩ
***et Europe
Trans MOSFET N-CH 30V 12.5A 8-Pin SOIC N T/R
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
***et
Trans MOSFET P-CH 30V 12.6A 8-Pin DSO Tube
***el Electronic
CAP CER 7.1PF 25V C0G/NP0 01005
***ure Electronics
Single N-Channel 30 V 8.5 mOhm 8.3 nC HEXFET® Power Mosfet - SOIC-8
***(Formerly Allied Electronics)
MOSFET; N Ch.; 30V; 14A; 8.5 MOHM; 8.3 NC QG; SO-8; Pb-Free
***ical
Trans MOSFET N-CH Si 30V 14A 8-Pin SOIC Tube
***ment14 APAC
MOSFET, N SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.35V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Charge Qrr Tj = 25°C Typ:8.3nC; Current Id Max:14A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:110A; Termination Type:Surface Mount Device; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:2.35V; Voltage Vgs Rds on Measurement:10V
*** Source Electronics
MOSFET P-CH 30V 19.7A 8-SOIC / Trans MOSFET P-CH 30V 19.7A 8-Pin SOIC N T/R
***ure Electronics
SI4425DDY Series 30 V 9.8 mOhm 80 nC P-Channel Surface Mount Mosfet - SOIC-8
***ment14 APAC
MOSFET, P-CH, 30V, 19.7A, SO8; Transistor Polarity:P Channel; Continuous Drain Current Id:-19.7A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):8.1mohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:5.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-19.7A; Power Dissipation Pd:5.7W; Voltage Vgs Max:20V
Parte # Mfg. Descripción Valores Precio
NTMS4801NR2G
DISTI # 27615140
ON SemiconductorTrans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R
RoHS: Compliant
25000
  • 2500:$0.2125
NTMS4801NR2G
DISTI # 30578019
ON SemiconductorTrans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R
RoHS: Compliant
5780
  • 200:$0.1989
NTMS4801NR2G
DISTI # 31014206
ON SemiconductorTrans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R
RoHS: Compliant
2500
  • 2500:$0.2400
NTMS4801NR2G
DISTI # NTMS4801NR2GOSCT-ND
ON SemiconductorMOSFET N-CH 30V 7.5A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1969In Stock
  • 1000:$0.2832
  • 500:$0.3540
  • 100:$0.4778
  • 10:$0.6190
  • 1:$0.7100
NTMS4801NR2G
DISTI # NTMS4801NR2GOSDKR-ND
ON SemiconductorMOSFET N-CH 30V 7.5A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1969In Stock
  • 1000:$0.2832
  • 500:$0.3540
  • 100:$0.4778
  • 10:$0.6190
  • 1:$0.7100
NTMS4801NR2G
DISTI # NTMS4801NR2GOSTR-ND
ON SemiconductorMOSFET N-CH 30V 7.5A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2500:$0.2491
NTMS4801NR2G
DISTI # C1S541900451096
ON SemiconductorTrans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R
RoHS: Compliant
5780
  • 200:$0.1560
NTMS4801NR2G
DISTI # C1S541900599156
ON SemiconductorTrans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R
RoHS: Compliant
2500
  • 2500:$0.3110
NTMS4801NR2G
DISTI # NTMS4801NR2G
ON SemiconductorTrans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R - Tape and Reel (Alt: NTMS4801NR2G)
RoHS: Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 2500:$0.1769
  • 5000:$0.1759
  • 10000:$0.1739
  • 15000:$0.1709
  • 25000:$0.1669
NTMS4801NR2G
DISTI # 05R9176
ON SemiconductorN CHANNEL MOSFET, 30V, 9.9A, SOIC, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:9.9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.007ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V RoHS Compliant: Yes0
  • 1:$0.6440
  • 25:$0.5040
  • 100:$0.3320
  • 250:$0.3220
  • 500:$0.3130
  • 1000:$0.2690
  • 2500:$0.2300
  • 5000:$0.2240
NTMS4801NR2G
DISTI # 31AC1060
ON SemiconductorMOSFET, N-CH, 30V, 12A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.007ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Power Dissipation RoHS Compliant: Yes2495
  • 1:$0.5900
  • 10:$0.4850
  • 25:$0.4280
  • 50:$0.3700
  • 100:$0.3130
  • 250:$0.2920
  • 500:$0.2710
  • 1000:$0.2500
NTMS4801NR2G
DISTI # 70467537
ON SemiconductorNTMS4801NR2G N-channel MOSFET Transistor,12 A,30 V,8-Pin SOIC
RoHS: Compliant
0
  • 50:$0.5990
  • 100:$0.5930
  • 250:$0.5870
  • 500:$0.5130
NTMS4801NR2GON Semiconductor 
RoHS: Not Compliant
320122
  • 1000:$0.2600
  • 500:$0.2800
  • 100:$0.2900
  • 25:$0.3000
  • 1:$0.3200
NTMS4801NR2G
DISTI # 863-NTMS4801NR2G
ON SemiconductorMOSFET NFET SO8 30V 9.9A 12.5mOhm
RoHS: Compliant
2686
  • 1:$0.5900
  • 10:$0.4850
  • 100:$0.3130
  • 1000:$0.2500
  • 2500:$0.2110
  • 10000:$0.2040
  • 25000:$0.1960
NTMS4801NR2G
DISTI # 8021484P
ON SemiconductorNTMS4801NR2GNFET SO8 30V 9.9A 12.5MO, RL2521
  • 125:£0.1390
NTMS4801NR2GON Semiconductor 311
    NTMS4801NR2G
    DISTI # 2774827
    ON SemiconductorMOSFET, N-CH, 30V, 12A, SOIC
    RoHS: Compliant
    2495
    • 1:$0.9150
    • 10:$0.7840
    • 100:$0.5360
    • 250:$0.4390
    • 500:$0.3600
    • 1000:$0.3330
    NTMS4801NR2G
    DISTI # 2774827
    ON SemiconductorMOSFET, N-CH, 30V, 12A, SOIC
    RoHS: Compliant
    2495
    • 5:£0.4150
    • 25:£0.3880
    • 100:£0.2370
    • 250:£0.2110
    • 500:£0.1850
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    Mfr.#: PIC18F25K40-I/SO

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    Mfr.#: SIHG80N60E-GE3

    OMO.#: OMO-SIHG80N60E-GE3-VISHAY

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    Disponibilidad
    Valores:
    82
    En orden:
    2065
    Ingrese la cantidad:
    El precio actual de NTMS4801NR2G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,59 US$
    0,59 US$
    10
    0,48 US$
    4,85 US$
    100
    0,31 US$
    31,30 US$
    1000
    0,25 US$
    250,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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