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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| FQB55N06TM DISTI # FQB55N06TM-ND | ON Semiconductor | MOSFET N-CH 60V 55A D2PAK RoHS: Compliant Min Qty: 800 Container: Tape & Reel (TR) | Limited Supply - Call | |
| FQB55N06TM DISTI # 512-FQB55N06TM | ON Semiconductor | MOSFET 60V N-Channel QFET RoHS: Compliant | 0 | |
| FQB55N06TM | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 55A I(D), 60V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 1896 |
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| Imagen | Parte # | Descripción |
|---|---|---|
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Mfr.#: FQB55N10TM OMO.#: OMO-FQB55N10TM |
MOSFET 100V N-Channel QFET |
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Mfr.#: FQB55N06 OMO.#: OMO-FQB55N06-1190 |
Nuevo y original |
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Mfr.#: FQB55N06TM |
MOSFET N-CH 60V 55A D2PAK |
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Mfr.#: FQB55N06TM-NL OMO.#: OMO-FQB55N06TM-NL-1190 |
Nuevo y original |
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Mfr.#: FQB55N10 OMO.#: OMO-FQB55N10-1190 |
MOSFET, N, D2-PAK, Transistor Polarity:N Channel, Continuous Drain Current Id:55A, Drain Source Voltage Vds:100V, On Resistance Rds(on):0.026ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage |
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Mfr.#: FQB55N10TM |
MOSFET N-CH 100V 55A D2PAK |
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Mfr.#: FQB55N10TM-NL OMO.#: OMO-FQB55N10TM-NL-1190 |
Nuevo y original |
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Mfr.#: FQB55N10TMCT-ND OMO.#: OMO-FQB55N10TMCT-ND-1190 |
Nuevo y original |