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FDS89141

FDS89141
Mfr. #:
FDS89141
Fabricante:
ON Semiconductor
Descripción:
MOSFET 2N-CH 100V 3.5A 8SOIC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDS89141 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
FDS89141 más información
Atributo del producto
Valor de atributo
Fabricante
Fairchild Semiconductor
categoria de producto
FET: matrices
Serie
PowerTrenchR
embalaje
Embalaje alternativo de Digi-ReelR
Unidad de peso
0.006596 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
8-SOIC (0.154", 3.90mm Width)
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
2 Channel
Paquete de dispositivo de proveedor
8-SO
Configuración
Doble
Tipo FET
2 N-Channel (Dual)
Potencia máxima
1.6W
Tipo transistor
2 N-Channel
Drenaje-a-fuente-voltaje-Vdss
100V
Entrada-Capacitancia-Ciss-Vds
398pF @ 50V
Función FET
Puerta de nivel lógico
Corriente-Continuo-Drenaje-Id-25 ° C
3.5A
Rds-On-Max-Id-Vgs
62 mOhm @ 3.5A, 10V
Vgs-th-Max-Id
4V @ 250μA
Puerta-Carga-Qg-Vgs
7.1nC @ 10V
Disipación de potencia Pd
31 W
Temperatura máxima de funcionamiento
+ 150 C
Id-corriente-de-drenaje-continua
3.5 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Resistencia a la fuente de desagüe de Rds
62 mOhms
Polaridad del transistor
Canal N
Qg-Gate-Charge
5.1 nC
Transconductancia directa-Mín.
14.7 S
Tags
FDS891, FDS89, FDS8, FDS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
Dual N-Channel PowerTrench® MOSFET 100V, 3.5A, 62mΩ
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
***ment14 APAC
MOSFET, NN CH, 100V, 3.5A, 8SOIC; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:3.5A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.047ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.1V; Power Dissipation Pd:31W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C
Fairchild PowerTrench MOSFETs
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
N-Channel PowerTrench® MOSFETs
ON Semiconductor N-Channel PowerTrench® MOSFETs are produced using advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. ON Semiconductor N-Channel PowerTrench® MOSFETs are available in a variety of Drain to Source Voltage specifications, from 30V to 250V.The FDD10N20LZ and FDD7N25LZ are N-Channel enhancement mode power field effect transistors that are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.The FDMC6296 is a single N-Channel MOSFET in a thermally efficient MicroFET Package that has been specifically designed to perform well in Point of Load converters. Providing an optimized balance between rDS(on) and gate charge this device can be effectively used as a "high side" control swtich or "low side" synchronous rectifier.Learn more
Parte # Mfg. Descripción Valores Precio
FDS89141
DISTI # FDS89141CT-ND		ON SemiconductorMOSFET 2N-CH 100V 3.5A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		12929In Stock
  • 1000:$0.7818
  • 500:$0.9902
  • 100:$1.2769
  • 10:$1.6160
  • 1:$1.8200
FDS89141
DISTI # FDS89141DKR-ND		ON SemiconductorMOSFET 2N-CH 100V 3.5A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		12929In Stock
  • 1000:$0.7818
  • 500:$0.9902
  • 100:$1.2769
  • 10:$1.6160
  • 1:$1.8200
FDS89141
DISTI # FDS89141TR-ND		ON SemiconductorMOSFET 2N-CH 100V 3.5A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		12500In Stock
  • 2500:$0.7084
FDS89141
DISTI # FDS89141		ON SemiconductorTrans MOSFET N-CH 100V 3.5A 8-Pin SO T/R (Alt: FDS89141)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
    FDS89141
    DISTI # FDS89141    		ON SemiconductorTrans MOSFET N-CH 100V 3.5A 8-Pin SO T/R - Tape and Reel (Alt: FDS89141)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 2500:$0.6009
    • 5000:$0.5969
    • 10000:$0.5889
    • 15000:$0.5819
    • 25000:$0.5669
    FDS89141
    DISTI # 88T3365    		ON SemiconductorMOSFET, NN CHANNEL, 100V, 3.5A, 8SOIC,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:3.5A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.047ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.1V RoHS Compliant: Yes0
    • 1:$1.5100
    • 10:$1.2900
    • 25:$1.1900
    • 50:$1.0900
    • 100:$0.9900
    • 250:$0.9330
    • 500:$0.8750
    • 1000:$0.6900
    FDS89141
    DISTI # 27T6448    		ON SemiconductorFET 100V 62.0 MOHM SO8 / REEL0
    • 1:$0.6290
    • 2500:$0.6210
    • 5000:$0.6140
    • 10000:$0.6060
    FDS89141.
    DISTI # 27AC5725    		Fairchild Semiconductor CorporationFET 100V 62.0 MOHM SO8 ROHS COMPLIANT: YES0
    • 1:$0.6290
    • 2500:$0.6210
    • 5000:$0.6140
    • 10000:$0.6060
    FDS89141
    DISTI # 512-FDS89141    		ON SemiconductorMOSFET 100V Dual N-Channel PowerTrench MOSFET
    RoHS: Compliant    		0
    • 1:$1.5100
    • 10:$1.2900
    • 100:$0.9900
    • 500:$0.8750
    • 1000:$0.6900
    FDS89141
    DISTI # 2083349    		ON SemiconductorMOSFET, NN CH, 100V, 3.5A, 8SOIC
    RoHS: Compliant    		240
    • 5:£1.0800
    • 25:£0.9800
    • 100:£0.7510
    • 250:£0.7070
    • 500:£0.6630
    FDS89141
    DISTI # 2083349    		ON SemiconductorMOSFET, NN CH, 100V, 3.5A, 8SOIC
    RoHS: Compliant    		0
    • 1:$2.4000
    • 10:$2.0400
    • 100:$1.5700
    • 500:$1.3900
    • 1000:$1.1000
    • 2500:$0.9690
    • 10000:$0.9330
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    OMO.#: OMO-FDS8990A-1190

    		 Nuevo y original
    FDS8447-CUT TAPE

    Mfr.#: FDS8447-CUT TAPE

    OMO.#: OMO-FDS8447-CUT-TAPE-1190

    		 Nuevo y original
    FDS8958A-CUT TAPE

    Mfr.#: FDS8958A-CUT TAPE

    OMO.#: OMO-FDS8958A-CUT-TAPE-1190

    		 Nuevo y original
    Disponibilidad
    Valores:
    Available
    En orden:
    4500
    Ingrese la cantidad:
    El precio actual de FDS89141 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,85 US$
    0,85 US$
    10
    0,81 US$
    8,08 US$
    100
    0,77 US$
    76,53 US$
    500
    0,72 US$
    361,40 US$
    1000
    0,68 US$
    680,30 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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